Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | HSD17B10 | Q99714 | 3/20 | 0.54 |
| ▸ | CYP2C9 | P11712 | 2/20 | 0.54 |
| ▸ | ALOX15 | P16050 | 3/20 | 0.53 |
| ▸ | ALDH1A1 | P00352 | 2/20 | 0.53 |
| ▸ | USP2 | O75604 | 1/20 | 0.53 |
| ▸ | GAA | P10253 | 1/20 | 0.53 |
| ▸ | PKM | P14618 | 1/20 | 0.53 |
| ▸ | HPGD | P15428 | 1/20 | 0.53 |
| ▸ | HDAC4 | P56524 | 1/20 | 0.46 |
| ▸ | HDAC2 | Q92769 | 1/20 | 0.46 |
| ▸ | HDAC8 | Q9BY41 | 1/20 | 0.46 |
| ▸ | ABCB11 | O95342 | 1/20 | 0.46 |
| ▸ | ESR1 | P03372 | 3/20 | 0.45 |
| ▸ | CYP1A2 | P05177 | 2/20 | 0.45 |
| ▸ | CYP3A4 | P08684 | 2/20 | 0.45 |
| ▸ | TDP1 | Q9NUW8 | 2/20 | 0.45 |
| ▸ | LMNA | P02545 | 1/20 | 0.45 |
| ▸ | PGR | P06401 | 1/20 | 0.45 |
| ▸ | CHRM2 | P08172 | 1/20 | 0.45 |
| ▸ | ADORA3 | P0DMS8 | 1/20 | 0.45 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL18350082 | 0.96 | HSD17B10 (0.51) | HSD17B10CYP2C9ALOX15ALDH1A1USP2 | |
| SCHEMBL2740765 | 0.96 | HSD17B10 (0.51) | HSD17B10CYP2C9ALOX15ALDH1A1USP2 | |
| SCHEMBL10224687 | 0.94 | HSD17B10 (0.51) | HSD17B10CYP2C9ALOX15ALDH1A1USP2 | |
| SCHEMBL9167387 | 0.88 | ALDH1A1 (0.53) | HSD17B10ALOX15ALDH1A1USP2GAA | |
| SCHEMBL2740766 | 0.85 | RAD52 (0.56) | HSD17B10CYP2C9ALOX15ALDH1A1USP2 | |
| SCHEMBL20100785 | 0.85 | ALDH1A1 (0.58) | HSD17B10CYP2C9ALOX15ALDH1A1USP2 | |
| SCHEMBL3725681 | 0.84 | ALDH1A1 (0.50) | HSD17B10ALOX15ALDH1A1USP2GAA | |
| SCHEMBL3727201 | 0.84 | ALDH1A1 (0.50) | HSD17B10ALOX15ALDH1A1USP2GAA | |
| SCHEMBL14341544 | 0.82 | ALDH1A1 (0.50) | HSD17B10ALOX15ALDH1A1USP2GAA | |
| SCHEMBL13706059 | 0.82 | UGT2B7 (0.62) | HSD17B10ALOX15ALDH1A1USP2GAA |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 281 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-20230333470-A1 | CHEMICAL-RESISTANT PROTECTIVE FILM | NISSAN CHEMICAL CORPORATION (JP) | 2023-10-19 | — | — | US | disclosed |
| US-11762127-B2 | Antireflective film including a photoresist material containing a polymer compound having an aromatic group, method of producing antireflective film, and eyeglass type display | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-09-19 | — | — | US | disclosed |
| US-11693316-B2 | Resist composition and method of forming resist pattern | TOKYO OHKA KOGYO CO., LTD. (JP) | 2023-07-04 | — | — | US | disclosed |
| US-11693313-B2 | Resist composition and method of forming resist pattern | TOKYO OHKA KOGYO CO., LTD. (JP) | 2023-07-04 | — | — | US | disclosed |
| US-20230139009-A1 | ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, PATTERN FORMING METHOD, AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE | FUJIFILM CORPORATION (JP) | 2023-05-04 | — | — | US | disclosed |
| US-11256169-B2 | Resist composition, and method of forming resist pattern | TOKYO OHKA KOGYO CO., LTD. (JP) | 2022-02-22 | — | — | US | disclosed |
| US-20180210338-A1 | RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN | TOKYO OHKA KOGYO CO., LTD. (JP) | 2018-07-26 | — | — | US | disclosed |
| US-10011576-B2 | Actinic ray-sensitive or radiation-sensitive resin composition, actinic ray-sensitive or radiation-sensitive film, mask blank provided with actinic ray-sensitive or radiation-sensitive film, pattern forming method, method for manufacturing electronic device, electronic device, and compound | FUJIFILM CORPORATION (JP) | 2018-07-03 | — | — | US | disclosed |
| US-10007183-B2 | Compound for forming organic film, and organic film composition using the same, process for forming organic film, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2018-06-26 | — | — | US | disclosed |
| US-9977330-B2 | Compound for forming organic film, and organic film composition using the same, process for forming organic film, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2018-05-22 | — | — | US | disclosed |
| US-7491483-B2 | Polymers, positive resist compositions and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2009-02-17 | — | — | US | disclosed |
| US-20080312400-A1 | COMPOSITION FOR FORMING RESIST UNDERLAYER FILM, AND RESIST UNDERLAYER FILM | TOKYO OHKA KOGYO CO., LTD. (JP) | 2008-12-18 | — | — | US | disclosed |
| US-20080102407-A1 | Sulfonium salt having polymerizable anion, polymer, resist composition, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. | 2008-05-01 | — | — | US | disclosed |
| US-20080020290-A1 | Negative resist composition and patterning process using the same | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2008-01-24 | — | — | US | disclosed |
| US-20080020289-A1 | Novel polymer, positive resist composition and patterning process using the same | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2008-01-24 | — | — | US | disclosed |
| US-20080020289-A1 | Novel polymer, positive resist composition and patterning process using the same | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2008-01-24 | — | — | US | disclosed |
| US-20070275325-A1 | Photoresist undercoat-forming material and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2007-11-29 | — | — | US | disclosed |
| US-20070207408-A1 | Polymers, positive resist compositions and patterning process | SHIN-ETSU CHEMICAL CO., LTD. | 2007-09-06 | — | — | US | disclosed |
| US-20070122740-A1 | Resist undercoat-forming material and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2007-05-31 | — | — | US | disclosed |
| US-20070111140-A1 | Resist composition and patterning process using the same | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2007-05-17 | — | — | US | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (3 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-11693313-B2 | Resist composition and method of forming resist pattern | C1R, C1S, C9 | HSD17B10 413/4885CYP2C9 1002/4885ALOX15 1413/4885 |
| US-10007183-B2 | Compound for forming organic film, and organic film composition using the same, process for forming organic film, and patterning process | OR10J3, RER1, OLA1 | HSD17B10 1192/4885CYP2C9 2832/4885ALOX15 750/4885 |
| US-10011576-B2 | Actinic ray-sensitive or radiation-sensitive resin composition, actinic ray-sensitive or radiation-sensitive film, mask blank provided with actinic ray-sensitive or radiation-sensitive film, pattern forming method, method for manufacturing electronic device, electronic device, and compound | RARA, RXRA, RARG | HSD17B10 4621/4885CYP2C9 2062/4885ALOX15 1174/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.