SCHEMBL86332

SCHEMBL86332

C=C(C)C(=O)OC(CC(O)(C(F)(F)F)C(F)(F)F)C1CCCCC1

nearest known ligand 0.33

Predicted protein targets (top 7)

geneUniProtsupporting neighboursconfidence
PDK1 Q15118 1/20 0.33
PDK2 Q15119 1/20 0.33
PDK3 Q15120 1/20 0.33
PDK4 Q16654 1/20 0.33
EPHX1 P07099 1/20 0.31
ALDH1A1 P00352 1/20 0.30
NPSR1 Q6W5P4 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL86335 0.99 PDK1 (0.31) PDK1PDK2PDK3PDK4
SCHEMBL12026733 0.88 PDK1 (0.35) PDK1PDK2PDK3PDK4EPHX1
SCHEMBL15836462 0.86 PDK1 (0.33) PDK1PDK2PDK3PDK4
SCHEMBL14865715 0.86 PDK1 (0.33) PDK1PDK2PDK3PDK4EPHX1
SCHEMBL10212946 0.86
SCHEMBL19335363 0.84
SCHEMBL15836477 0.83 TSHR (0.31) EPHX1
SCHEMBL19335358 0.83
SCHEMBL85655 0.82
SCHEMBL18020327 0.82

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 198 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
WO-2011093924-A1 BICYCLIC HETEROARYL INHIBITORS OF PDE4 KALYPSYS, INC (US) 2011-08-04 WO claimed
US-20230251575-A1 PHOTORESIST TOPCOAT COMPOSITIONS AND PATTERN FORMATION METHODS U.S. BANK TRUST COMPANY, NATIONAL ASSOCIATION, AS NOTES COLLATERAL AGENT 2023-08-10 US disclosed
US-20230221644-A1 METHOD FOR PRODUCING COMPOSITION FOR FORMING NON-PHOTOSENSITIVE UPPER LAYER FILM, PATTERN FORMING METHOD, AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2023-07-13 US disclosed
WO-2022124182-A1 METHOD FOR PRODUCING FLUORINE-CONTAINING POLYMER AND COMPOSITION セントラル硝子株式会社 2022-06-16 WO disclosed
WO-2022124183-A1 FLUORINE-CONTAINING POLYMER セントラル硝子株式会社 2022-06-16 WO disclosed
CN-104407501-B Compositions and methods for photolithography 罗门哈斯电子材料有限公司 2022-03-25 CN disclosed
EP-2420891-B1 Process for immersion lithography ROHM & HAAS ELECT MAT (US) 2021-06-23 EP disclosed
US-10792711-B2 Substrate processing system, substrate cleaning method, and recording medium TOKYO ELECTRON LIMITED (JP) 2020-10-06 US disclosed
US-10766992-B2 Resin and resist composition SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2020-09-08 US disclosed
US-10481495-B2 Topcoat compositions containing fluorinated thermal acid generators ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) 2019-11-19 US disclosed
US-20070254235-A1 SELF-TOPCOATING RESIST FOR PHOTOLITHOGRAPHY INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2007-11-01 US disclosed
US-20070218401-A1 liquid immersion lithography, solves problem of defect caused by residual fluid droplets on the resist film; blend of resin containing no fluorine and acid labile group, and an acrylic fluoro-copolymer with units of a fluoromonomer and units of acid labile, lactone, or hydroxy-functional group SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2007-09-20 US disclosed
US-20070218401-A1 liquid immersion lithography, solves problem of defect caused by residual fluid droplets on the resist film; blend of resin containing no fluorine and acid labile group, and an acrylic fluoro-copolymer with units of a fluoromonomer and units of acid labile, lactone, or hydroxy-functional group SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2007-09-20 US disclosed
US-20070212646-A1 Compositions and processes for photolithography ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) 2007-09-13 US disclosed
US-20070212646-A1 Compositions and processes for photolithography ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) 2007-09-13 US disclosed
US-20070212646-A1 Compositions and processes for photolithography ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) 2007-09-13 US disclosed
EP-1832929-A1 Compositions and process for photolithography Rohm and Haas Electronic Materials, L.L.C. (US) 2007-09-12 EP disclosed
US-20070032684-A1 Process for producing fluorine-containing diol and its derivatives CENTRAL GLASS COMPANY, LIMITED (JP) 2007-02-08 US disclosed
EP-1720072-A1 Compositons and processes for immersion lithography Rohm and Haas Electronic Materials, L.L.C. (US) 2006-11-08 EP disclosed
US-20060246373-A1 Applying on photoresist, a photoactive component, and material(s) having a water contact angle changeable by base treatment; activation by immersion exposing to radiation; reduced leaching; pentafluoroacrylate-ethyl cyclopentyl methacrylate-trimethylolpropane triacrylate terpolymer ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) 2006-11-02 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (1 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20070032684-A1 Process for producing fluorine-containing diol and its derivatives HDHD5, ADH1A, AFF1 PDK1 62/4885PDK2 37/4885PDK3 154/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.