SCHEMBL8736574

SCHEMBL8736574

COc1ccc(COC(=O)N(CCc2ccccc2)C(=O)OCc2ccc(OC)cc2)cc1

nearest known ligand 0.58

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
ALOX5 P09917 2/20 0.58
NPC1 O15118 1/20 0.51
RAB9A P51151 1/20 0.51
LPAR1 Q92633 1/20 0.50
LPAR5 Q9H1C0 1/20 0.50
LTB4R Q15722 1/20 0.49
LTB4R2 Q9NPC1 1/20 0.49
ATM Q13315 2/20 0.49
MEN1 O00255 1/20 0.49
KMT2A Q03164 1/20 0.49
FFAR1 O14842 1/20 0.49
TAS2R14 Q9NYV8 1/20 0.48
ALDH1A1 P00352 1/20 0.48
FABP7 O15540 1/20 0.48
FABP5 Q01469 1/20 0.48
P2RX4 Q99571 1/20 0.48
TDP1 Q9NUW8 1/20 0.48
L3MBTL1 Q9Y468 1/20 0.48
CHRM5 P08912 1/20 0.47
CHRM1 P11229 1/20 0.47

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL16789553 0.95 ALOX5 (0.55) ALOX5NPC1RAB9ALPAR1LPAR5
SCHEMBL16787973 0.89 ALOX5 (0.48) ALOX5NPC1RAB9ALPAR1LPAR5
SCHEMBL14982945 0.89 ALOX5 (0.47) ALOX5NPC1RAB9ALPAR1LPAR5
SCHEMBL13534872 0.84 ALOX5 (0.51) ALOX5LTB4RLTB4R2FFAR1L3MBTL1
SCHEMBL14477935 0.81 ALOX5 (0.50) ALOX5NPC1RAB9ALPAR1LPAR5
SCHEMBL22028109 0.79 LTA4H (0.58) NPC1RAB9AATMALDH1A1FABP7
SCHEMBL1521953 0.79 LTA4H (0.58) NPC1RAB9AATMALDH1A1FABP7
SCHEMBL22028110 0.79 LTA4H (0.58) NPC1RAB9AATMALDH1A1FABP7
SCHEMBL6644102 0.79 LTA4H (0.58) NPC1RAB9AATMALDH1A1FABP7
SCHEMBL29563588 0.78 MAPK1 (0.53) ATMMEN1KMT2ATAS2R14ALDH1A1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 272 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-11584810-B2 Actinic ray-sensitive or radiation-sensitive resin composition, actinic ray-sensitive or radiation-sensitive film, pattern forming method, method of manufacturing electronic device, compound, and resin FUJIFILM CORPORATION (JP) 2023-02-21 US disclosed
US-20190204736-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, PATTERN FORMING METHOD, METHOD FOR MANUFACTURING ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2019-07-04 US disclosed
US-20190171104-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE FILM, PATTERN FORMING METHOD, METHOD OF MANUFACTURING ELECTRONIC DEVICE, COMPOUND, AND RESIN FUJIFILM CORPORATION (JP) 2019-06-06 US disclosed
US-10234759-B2 Actinic-ray- or radiation-sensitive resin composition, actinic-ray- or radiation-sensitive film and method of forming pattern FUJIFILM CORPORATION (JP) 2019-03-19 US disclosed
US-9915870-B2 Pattern forming method, composition kit and resist film, and method for producing electronic device using them, and electronic device FUJIFILM CORPORATION (JP) 2018-03-13 US disclosed
US-9915870-B2 Pattern forming method, composition kit and resist film, and method for producing electronic device using them, and electronic device FUJIFILM CORPORATION (JP) 2018-03-13 US disclosed
US-9885956-B2 Pattern forming method, and, electronic device producing method and electronic device, each using the same FUJIFILM CORPORATION (JP) 2018-02-06 US disclosed
US-9760003-B2 Pattern forming method and actinic-ray- or radiation-sensitive resin composition FUJIFILM CORPORATION (JP) 2017-09-12 US disclosed
US-9760003-B2 Pattern forming method and actinic-ray- or radiation-sensitive resin composition FUJIFILM CORPORATION (JP) 2017-09-12 US disclosed
US-9709892-B2 Actinic-ray- or radiation-sensitive resin composition and method of forming pattern using the same FUJIFILM CORPORATION (JP) 2017-07-18 US disclosed
US-20110236828-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION AND PATTERN FORMING METHOD USING THE SAME FUJIFILM CORPORATION (JP) 2011-09-29 US disclosed
US-20110223536-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, AND RESIST FILM AND PATTERN FORMING METHOD USING THE SAME FUJIFILM CORPORATION (JP) 2011-09-15 US disclosed
US-20110223536-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, AND RESIST FILM AND PATTERN FORMING METHOD USING THE SAME FUJIFILM CORPORATION (JP) 2011-09-15 US disclosed
US-20110091809-A1 ACTINIC-RAY- OR RADIATION-SENSITIVE RESIN COMPOSITION AND METHOD OF FORMING PATTERN USING THE COMPOSITION FUJIFILM CORPORATION (JP) 2011-04-21 US disclosed
US-20110091809-A1 ACTINIC-RAY- OR RADIATION-SENSITIVE RESIN COMPOSITION AND METHOD OF FORMING PATTERN USING THE COMPOSITION FUJIFILM CORPORATION (JP) 2011-04-21 US disclosed
US-20100323305-A1 PATTERN FORMING METHOD, RESIST COMPOSITION FOR MULTIPLE DEVELOPMENT USED IN THE PATTERN FORMING METHOD, DEVELOPER FOR NEGATIVE DEVELOPMENT USED IN THE PATTERN FORMING METHOD, AND RINSING SOLUTION FOR NEGATIVE DEVELOPMENT USED IN THE PATTERN FORMING METHOD FUJIFILM CORPORATION (JP) 2010-12-23 US disclosed
US-20100323305-A1 PATTERN FORMING METHOD, RESIST COMPOSITION FOR MULTIPLE DEVELOPMENT USED IN THE PATTERN FORMING METHOD, DEVELOPER FOR NEGATIVE DEVELOPMENT USED IN THE PATTERN FORMING METHOD, AND RINSING SOLUTION FOR NEGATIVE DEVELOPMENT USED IN THE PATTERN FORMING METHOD FUJIFILM CORPORATION (JP) 2010-12-23 US disclosed
US-20100239978-A1 PHOTOSENSITIVE COMPOSITION, AND PATTERN-FORMING METHOD AND RESIST FILM USING THE PHOTOSENSITIVE COMPOSITION FUJIFILM CORPORATION (JP) 2010-09-23 US disclosed
US-20100239978-A1 PHOTOSENSITIVE COMPOSITION, AND PATTERN-FORMING METHOD AND RESIST FILM USING THE PHOTOSENSITIVE COMPOSITION FUJIFILM CORPORATION (JP) 2010-09-23 US disclosed
US-20100015554-A1 ACTINIC-RAY- OR RADIATION-SENSITIVE RESIN COMPOSITION AND METHOD OF FORMING PATTERN USING THE COMPOSITION FUJIFILM CORPORATION (JP) 2010-01-21 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (1 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-10234759-B2 Actinic-ray- or radiation-sensitive resin composition, actinic-ray- or radiation-sensitive film and method of forming pattern AFF1, MACF1, RER1 ALOX5 3342/4885NPC1 4256/4885RAB9A 685/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.