Predicted protein targets (top 1)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | SMN1; SMN2 | Q16637 | 1/20 | 0.33 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL15268345 | 0.82 | SMN1; SMN2 (0.34) | SMN1; SMN2 | |
| SCHEMBL10175619 | 0.75 | SMN1; SMN2 (0.36) | SMN1; SMN2 | |
| SCHEMBL16200803 | 0.74 | — | — | |
| SCHEMBL111588 | 0.74 | — | — | |
| SCHEMBL47559 | 0.74 | FKBP1A (0.32) | SMN1; SMN2 | |
| SCHEMBL110381 | 0.73 | — | — | |
| SCHEMBL12018273 | 0.72 | — | — | |
| SCHEMBL13359161 | 0.72 | CYP3A4 (0.33) | SMN1; SMN2 | |
| SCHEMBL9881204 | 0.72 | ALDH1A1 (0.34) | SMN1; SMN2 | |
| SCHEMBL879070 | 0.71 | HMGCR (0.33) | SMN1; SMN2 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 64 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-20230400768-A1 | RADIATION-SENSITIVE COMPOSITION AND METHOD OF FORMING RESIST PATTERN | JSR CORPORATION (JP) | 2023-12-14 | — | — | US | disclosed |
| US-20230400767-A1 | RADIATION-SENSITIVE RESIN COMPOSITION, METHOD OF FORMING RESIST PATTERN, POLYMER, AND COMPOUND | JSR CORPORATION (JP) | 2023-12-14 | — | — | US | disclosed |
| US-20230244143-A9 | RADIATION-SENSITIVE RESIN COMPOSITION, METHOD OF FORMING RESIST PATTERN, AND COMPOUND | JSR CORPORATION (JP) | 2023-08-03 | — | — | US | disclosed |
| US-20230236506-A2 | RADIATION-SENSITIVE RESIN COMPOSITION AND METHOD OF FORMING RESIST PATTERN | JSR CORPORATION (JP) | 2023-07-27 | — | — | US | disclosed |
| US-20230229082-A2 | RADIATION-SENSITIVE RESIN COMPOSITION AND METHOD OF FORMING RESIST PATTERN | JSR CORPORATION (JP) | 2023-07-20 | — | — | US | disclosed |
| US-20230205082-A9 | RADIATION-SENSITIVE COMPOSITION AND RESIST PATTERN-FORMING METHOD | JSR CORPORATION (JP) | 2023-06-29 | — | — | US | disclosed |
| US-11687003-B2 | Negative resist pattern-forming method, and composition for upper layer film formation | JSR CORPORATION (JP) | 2023-06-27 | — | — | US | disclosed |
| US-10018911-B2 | Chemically amplified resist material and resist pattern-forming method | JSR CORPORATION (JP) | 2018-07-10 | — | — | US | disclosed |
| US-9989849-B2 | Chemically amplified resist material and resist pattern-forming method | JSR CORPORATION (JP) | 2018-06-05 | — | — | US | disclosed |
| US-9939729-B2 | Resist pattern-forming method | JSR CORPORATION (JP) | 2018-04-10 | — | — | US | disclosed |
| US-7214465-B2 | Positive photosensitive composition | FUJIFILM CORPORATION (JP) | 2007-05-08 | — | — | US | disclosed |
| US-7214465-B2 | Positive photosensitive composition | FUJIFILM CORPORATION (JP) | 2007-05-08 | — | — | US | disclosed |
| US-7214733-B2 | Positive type resist composition | FUJI PHOTO FILM CO., LTD. (JP) | 2007-05-08 | — | — | US | disclosed |
| US-7214733-B2 | Positive type resist composition | FUJI PHOTO FILM CO., LTD. (JP) | 2007-05-08 | — | — | US | disclosed |
| US-7192681-B2 | Positive photosensitive composition | FUJI PHOTO FILM CO., LTD. (JP) | 2007-03-20 | — | — | US | disclosed |
| US-7192681-B2 | Positive photosensitive composition | FUJI PHOTO FILM CO., LTD. (JP) | 2007-03-20 | — | — | US | disclosed |
| US-7189492-B2 | Photosensitive composition and pattern forming method using the same | FUJI PHOTO FILM CO., LTD. (JP) | 2007-03-13 | — | — | US | disclosed |
| US-7189492-B2 | Photosensitive composition and pattern forming method using the same | FUJI PHOTO FILM CO., LTD. (JP) | 2007-03-13 | — | — | US | disclosed |
| US-7179578-B2 | Positive resist composition | FUJI PHOTO FILM CO., LTD. (JP) | 2007-02-20 | — | — | US | disclosed |
| US-7179578-B2 | Positive resist composition | FUJI PHOTO FILM CO., LTD. (JP) | 2007-02-20 | — | — | US | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (3 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-20230229082-A2 | RADIATION-SENSITIVE RESIN COMPOSITION AND METHOD OF FORMING RESIST PATTERN | RAD51, RER1, RAD1 | SMN1; SMN2 3741/4885 |
| US-20230400767-A1 | RADIATION-SENSITIVE RESIN COMPOSITION, METHOD OF FORMING RESIST PATTERN, POLYMER, AND COMPOUND | RER1, RAD51, RFT1 | SMN1; SMN2 2212/4885 |
| US-10018911-B2 | Chemically amplified resist material and resist pattern-forming method | SLC11A2, XRCC5, RAD54L | SMN1; SMN2 2493/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.