SCHEMBL8795305

SCHEMBL8795305

CCC(C)c1ccc(OS(=O)(=O)c2cccs2)cc1

nearest known ligand 0.44

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
NPC1 O15118 3/20 0.44
MAPT P10636 3/20 0.44
RAB9A P51151 2/20 0.44
SMN1; SMN2 Q16637 2/20 0.44
NFKB1 P19838 1/20 0.44
NFKB2 Q00653 1/20 0.44
RELA Q04206 1/20 0.44
MEN1 O00255 3/20 0.41
KMT2A Q03164 3/20 0.41
TSHR P16473 4/20 0.41
ALDH1A1 P00352 4/20 0.41
ATM Q13315 1/20 0.40
F2 P00734 1/20 0.40
CYP2D6 P10635 2/20 0.40
CYP2C9 P11712 2/20 0.40
CYP2C19 P33261 2/20 0.40
LMNA P02545 1/20 0.38
GAA P10253 1/20 0.38
ALOX12 P18054 1/20 0.38
HPGD P15428 1/20 0.38

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL28299218 0.77 NPC1 (0.54) NPC1MAPTRAB9ASMN1; SMN2MEN1
SCHEMBL1825104 0.77 TDP1 (0.54) NPC1MAPTRAB9ASMN1; SMN2KMT2A
SCHEMBL8794822 0.75 RAB9A (0.47) MAPTRAB9AMEN1KMT2AALDH1A1
SCHEMBL11589613 0.74 JAK2 (0.46) NPC1MAPTRAB9ASMN1; SMN2MEN1
SCHEMBL14594625 0.74 F2 (0.41) NPC1RAB9ASMN1; SMN2MEN1KMT2A
SCHEMBL1823366 0.74 ALDH1A1 (0.51) NPC1MAPTRAB9AMEN1KMT2A
SCHEMBL11198231 0.74 RAB9A (0.46) MAPTRAB9AMEN1KMT2AALDH1A1
SCHEMBL26317205 0.74 TDP1 (0.46) NPC1MAPTRAB9ASMN1; SMN2MEN1
SCHEMBL1830292 0.72 MEN1 (0.53) MAPTSMN1; SMN2MEN1KMT2ATSHR
SCHEMBL7771912 0.72 ALDH1A1 (0.50) NPC1MAPTRAB9AMEN1KMT2A

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-9447303-B2 Composition for forming resist underlayer film JSR CORPORATION (JP) 2016-09-20 US disclosed
US-20150197664-A1 COMPOSITION FOR FORMING RESIST UNDERLAYER FILM JSR CORPORATION (JP) 2015-07-16 US disclosed
US-9040232-B2 Method for pattern formation, method and composition for resist underlayer film formation, and resist underlayer film JSR CORPORATION (JP) 2015-05-26 US disclosed
US-20120129353-A1 METHOD FOR PATTERN FORMATION, METHOD AND COMPOSITION FOR RESIST UNDERLAYER FILM FORMATION, AND RESIST UNDERLAYER FILM JSR CORPORATION (JP) 2012-05-24 US disclosed