SCHEMBL91138

SCHEMBL91138

CC(C)CCCCC(C)CC(O)(C(F)(F)F)C(F)(F)F

nearest known ligand 0.46

Predicted protein targets (top 9)

geneUniProtsupporting neighboursconfidence
LMNA P02545 1/20 0.46
MEN1 O00255 1/20 0.39
CYP3A4 P08684 1/20 0.39
ALOX15 P16050 1/20 0.39
KMT2A Q03164 1/20 0.39
BLM P54132 1/20 0.35
PTPN1 P18031 2/20 0.33
PTPN2 P17706 1/20 0.33
CDC25B P30305 1/20 0.33

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL5846152 0.84 MEN1 (0.30) MEN1KMT2A
SCHEMBL17676547 0.83 FDPS (0.36)
SCHEMBL5845204 0.82 MEN1 (0.32) MEN1KMT2A
SCHEMBL10293313 0.82 LMNA (0.44) LMNAMEN1CYP3A4ALOX15KMT2A
SCHEMBL13588186 0.82 ALDH1A1 (0.35) MEN1CYP3A4ALOX15KMT2A
SCHEMBL14204537 0.78 TSHR (0.42)
SCHEMBL13856006 0.78 TSHR (0.42)
SCHEMBL24777548 0.78 LMNA (0.55) LMNAMEN1CYP3A4ALOX15KMT2A
SCHEMBL9908446 0.78 MEN1 (0.39) LMNAMEN1CYP3A4ALOX15KMT2A
SCHEMBL5845773 0.77

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 23 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8211618-B2 Positive resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-07-03 US disclosed
US-8198016-B2 Patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-06-12 US disclosed
US-8192921-B2 Patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-06-05 US disclosed
US-8129100-B2 Double patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-03-06 US disclosed
US-8129086-B2 Polymerizable compound, polymer, positive resist composition, and patterning process using the same SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-03-06 US disclosed
US-8129099-B2 Double patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-03-06 US disclosed
US-8101341-B2 Patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-01-24 US disclosed
US-20100227273-A1 POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2010-09-09 US disclosed
US-20100178617-A1 PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2010-07-15 US disclosed
US-20100178618-A1 PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2010-07-15 US disclosed
US-20090297979-A1 Polymerizable compound, polymer, positive resist composition, and patterning process using the same SHIN-ETSU CHEMICAL CO., LTD. (JP) 2009-12-03 US disclosed
US-20090286188-A1 Patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2009-11-19 US disclosed
US-20090253084-A1 DOUBLE PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2009-10-08 US disclosed
US-20090208886-A1 DOUBLE PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2009-08-20 US disclosed
US-20090087786-A1 PATTERNING PROCESS AND RESIST COMPOSITION USED THEREIN SHIN-ETSU CHEMICAL CO., LTD. (JP) 2009-04-02 US disclosed
US-20090053651-A1 PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2009-02-26 US disclosed
US-20090017400-A1 PATTERN FORMING METHOD FUJIFILM CORPORATION (JP) 2009-01-15 US disclosed
US-7449277-B2 Positive resist compositions and patterning process SHIN-ETSU CHEMICAL C., LTD (JP) 2008-11-11 US disclosed
US-20080220381-A1 Antireflection film composition and patterning process using the same SHIN-ETSU CHEMICAL CO., LTD. (JP) 2008-09-11 US disclosed
US-20080199806-A1 PATTERNING PROCESS AND RESIST COMPOSITION SHIN-ETSU CHEMICAL CO., LTD. (JP) 2008-08-21 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (1 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20090297979-A1 Polymerizable compound, polymer, positive resist composition, and patterning process using the same PRRC2A, PUF60, POLR2B LMNA 3427/4885MEN1 4377/4885CYP3A4 4794/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.