SCHEMBL91209

SCHEMBL91209

C=C(C)C(=O)OC1(I)C2(C)CCC(C2)C1(C)C

nearest known ligand 0.30

Predicted protein targets (top 2)

geneUniProtsupporting neighboursconfidence
ALDH1A1 P00352 1/20 0.30
SMN1; SMN2 Q16637 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL74548 0.82 ALDH1A1 (0.31) ALDH1A1
SCHEMBL2828538 0.77
SCHEMBL2740744 0.76 L3MBTL1 (0.34) ALDH1A1
SCHEMBL14614217 0.75
SCHEMBL13371116 0.72
SCHEMBL19719000 0.71
SCHEMBL16241192 0.71 L3MBTL1 (0.33)
SCHEMBL27484483 0.70 ALOX15 (0.33) ALDH1A1
SCHEMBL21026954 0.69 L3MBTL1 (0.36) ALDH1A1
SCHEMBL13955549 0.69 KDM4E (0.35) ALDH1A1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 56 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-9869931-B2 Resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2018-01-16 US disclosed
US-9760010-B2 Patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2017-09-12 US disclosed
US-8828641-B2 Chemically amplified resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2014-09-09 US disclosed
US-20120308930-A1 PATTERNING PROCESS AND RESIST COMPOSITION SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-12-06 US disclosed
US-20120288796-A1 RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-11-15 US disclosed
US-20120220112-A1 POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-08-30 US disclosed
US-20120202153-A1 RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-08-09 US disclosed
US-20120202158-A1 PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-08-09 US disclosed
US-20120183903-A1 PATTERNING PROCESS AND RESIST COMPOSITION SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-07-19 US disclosed
US-8216774-B2 Patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-07-10 US disclosed
US-20090208886-A1 DOUBLE PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2009-08-20 US disclosed
US-20090202940-A1 Positive resist composition and patterning process using the same SHIN-ETSU CHEMICAL CO., LTD. (JP) 2009-08-13 US disclosed
US-20090202947-A1 Positive resist composition and patterning process using the same SHIN-ETSU CHEMICAL CO.,LTD (JP) 2009-08-13 US disclosed
US-20090087786-A1 PATTERNING PROCESS AND RESIST COMPOSITION USED THEREIN SHIN-ETSU CHEMICAL CO., LTD. (JP) 2009-04-02 US disclosed
US-20090081595-A1 PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2009-03-26 US disclosed
US-20090053657-A1 PATTERNING PROCESS AND PATTERN SURFACE COATING COMPOSITION SHIN-ETSU CHEMICAL CO., LTD. (JP) 2009-02-26 US disclosed
US-20090053651-A1 PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2009-02-26 US disclosed
US-7449277-B2 Positive resist compositions and patterning process SHIN-ETSU CHEMICAL C., LTD (JP) 2008-11-11 US disclosed
US-20080199806-A1 PATTERNING PROCESS AND RESIST COMPOSITION SHIN-ETSU CHEMICAL CO., LTD. (JP) 2008-08-21 US disclosed
US-20080020289-A1 Novel polymer, positive resist composition and patterning process using the same SHIN-ETSU CHEMICAL CO., LTD. (JP) 2008-01-24 US disclosed