Predicted protein targets (top 11)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | CHRM5 | P08912 | 2/20 | 0.39 |
| ▸ | CHRM2 | P08172 | 1/20 | 0.38 |
| ▸ | CHRM4 | P08173 | 1/20 | 0.38 |
| ▸ | CHRM1 | P11229 | 1/20 | 0.38 |
| ▸ | CHRM3 | P20309 | 1/20 | 0.38 |
| ▸ | MAPK1 | P28482 | 1/20 | 0.38 |
| ▸ | CYP1A2 | P05177 | 1/20 | 0.33 |
| ▸ | MAOA | P21397 | 1/20 | 0.30 |
| ▸ | MAOB | P27338 | 1/20 | 0.30 |
| ▸ | KDM4E | B2RXH2 | 1/20 | 0.30 |
| ▸ | HSD17B10 | Q99714 | 1/20 | 0.30 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL2138361 | 0.75 | ALDH1A1 (0.39) | MAPK1CYP1A2MAOAMAOBKDM4E | |
| SCHEMBL1524754 | 0.71 | ALDH1A1 (0.36) | MAPK1CYP1A2KDM4EHSD17B10 | |
| SCHEMBL91217 | 0.70 | ALDH1A1 (0.33) | KDM4EHSD17B10 | |
| SCHEMBL27702429 | 0.69 | MAPK1 (0.37) | MAPK1KDM4EHSD17B10 | |
| SCHEMBL5384642 | 0.68 | KDM4E (0.33) | MAPK1KDM4EHSD17B10 | |
| SCHEMBL28101603 | 0.67 | MAPK1 (0.35) | MAPK1KDM4E | |
| SCHEMBL1524849 | 0.66 | KDM4E (0.41) | MAPK1KDM4EHSD17B10 | |
| SCHEMBL14562801 | 0.65 | — | — | |
| SCHEMBL12159707 | 0.65 | — | — | |
| SCHEMBL963415 | 0.65 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 29 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-20120315581-A1 | PATTERNING PROCESS AND RESIST COMPOSITION | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2012-12-13 | — | — | US | disclosed |
| US-20120308930-A1 | PATTERNING PROCESS AND RESIST COMPOSITION | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2012-12-06 | — | — | US | disclosed |
| US-8288072-B2 | Antireflection film; fast etching speed whcih reduces deformation; accuracy; 2,3-epoxypropyl methacrylate ester-styrene copolymer | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2012-10-16 | — | — | US | disclosed |
| US-8216774-B2 | Patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2012-07-10 | — | — | US | disclosed |
| US-8211618-B2 | Positive resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2012-07-03 | — | — | US | disclosed |
| US-8198016-B2 | Patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2012-06-12 | — | — | US | disclosed |
| US-8192921-B2 | Patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2012-06-05 | — | — | US | disclosed |
| US-8129100-B2 | Double patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2012-03-06 | — | — | US | disclosed |
| US-8129099-B2 | Double patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2012-03-06 | — | — | US | disclosed |
| US-8101341-B2 | Patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2012-01-24 | — | — | US | disclosed |
| US-20090253084-A1 | DOUBLE PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2009-10-08 | — | — | US | disclosed |
| US-20090226843-A1 | MONOMER, RESIST COMPOSITION, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2009-09-10 | — | — | US | disclosed |
| US-20090208886-A1 | DOUBLE PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2009-08-20 | — | — | US | disclosed |
| US-20090087786-A1 | PATTERNING PROCESS AND RESIST COMPOSITION USED THEREIN | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2009-04-02 | — | — | US | disclosed |
| US-20090053651-A1 | PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2009-02-26 | — | — | US | disclosed |
| US-7449277-B2 | Positive resist compositions and patterning process | SHIN-ETSU CHEMICAL C., LTD (JP) | 2008-11-11 | — | — | US | disclosed |
| US-20080227037-A1 | Resist lower layer film composition and patterning process using the same | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2008-09-18 | — | — | US | disclosed |
| US-20080220381-A1 | Antireflection film composition and patterning process using the same | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2008-09-11 | — | — | US | disclosed |
| US-20080199806-A1 | PATTERNING PROCESS AND RESIST COMPOSITION | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2008-08-21 | — | — | US | disclosed |
| US-7332616-B2 | Polymerizable compound, polymer, positive-resist composition, and patterning process using the same | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2008-02-19 | — | — | US | disclosed |