SCHEMBL91217

SCHEMBL91217

O=C1CC(C2CC=CCC2)CO1

nearest known ligand 0.33

Predicted protein targets (top 16)

geneUniProtsupporting neighboursconfidence
ALDH1A1 P00352 5/20 0.33
LMNA P02545 3/20 0.33
SMN1; SMN2 Q16637 2/20 0.33
HSD17B10 Q99714 2/20 0.33
TP53 P04637 1/20 0.33
TSHR P16473 1/20 0.33
ALOX15 P16050 1/20 0.33
HPGD P15428 2/20 0.32
KMT2A Q03164 2/20 0.32
MEN1 O00255 1/20 0.32
HTT P42858 1/20 0.32
KDM4E B2RXH2 2/20 0.30
CASP1 P29466 1/20 0.30
CASP7 P55210 1/20 0.30
GFER P55789 1/20 0.30
L3MBTL1 Q9Y468 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL14791308 0.77 HTT (0.35) ALDH1A1LMNASMN1; SMN2TP53TSHR
SCHEMBL11072877 0.72 ALDH1A1 (0.43) ALDH1A1LMNASMN1; SMN2HSD17B10TP53
SCHEMBL596635 0.72 ALDH1A1 (0.43) ALDH1A1LMNASMN1; SMN2HSD17B10TP53
SCHEMBL5693055 0.72 ALDH1A1 (0.43) ALDH1A1LMNASMN1; SMN2HSD17B10TP53
SCHEMBL11072914 0.72 ALDH1A1 (0.43) ALDH1A1LMNASMN1; SMN2HSD17B10TP53
SCHEMBL8010922 0.71 ALDH1A1 (0.38) ALDH1A1HTT
SCHEMBL7221117 0.71 ALDH1A1 (0.38) ALDH1A1HTT
SCHEMBL91223 0.70 CHRM5 (0.39) HSD17B10KDM4E
SCHEMBL14081885 0.69 SMN1; SMN2 (0.32) ALDH1A1LMNASMN1; SMN2HSD17B10TP53
SCHEMBL26344471 0.68 CYP2D6 (0.31) ALDH1A1LMNATP53TSHR

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 26 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20120315581-A1 PATTERNING PROCESS AND RESIST COMPOSITION SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-12-13 US disclosed
US-20120202158-A1 PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-08-09 US disclosed
US-8216774-B2 Patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-07-10 US disclosed
US-8198016-B2 Patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-06-12 US disclosed
US-20120141938-A1 BASIC COMPOUND, CHEMICALLY AMPLIFIED RESIST COMPOSITION, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-06-07 US disclosed
US-8192921-B2 Patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-06-05 US disclosed
US-8129100-B2 Double patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-03-06 US disclosed
US-8129099-B2 Double patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-03-06 US disclosed
US-8105764-B2 Patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-01-31 US disclosed
US-20100227274-A1 POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2010-09-09 US disclosed
US-20090297979-A1 Polymerizable compound, polymer, positive resist composition, and patterning process using the same SHIN-ETSU CHEMICAL CO., LTD. (JP) 2009-12-03 US disclosed
US-20090286188-A1 Patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2009-11-19 US disclosed
US-20090253084-A1 DOUBLE PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2009-10-08 US disclosed
US-20090226843-A1 MONOMER, RESIST COMPOSITION, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2009-09-10 US disclosed
US-20090208886-A1 DOUBLE PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2009-08-20 US disclosed
US-20090081595-A1 PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2009-03-26 US disclosed
US-20090053651-A1 PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2009-02-26 US disclosed
US-7491483-B2 Polymers, positive resist compositions and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2009-02-17 US disclosed
US-20080199806-A1 PATTERNING PROCESS AND RESIST COMPOSITION SHIN-ETSU CHEMICAL CO., LTD. (JP) 2008-08-21 US disclosed
US-7368218-B2 Positive resist compositions and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2008-05-06 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (2 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20090297979-A1 Polymerizable compound, polymer, positive resist composition, and patterning process using the same PRRC2A, PUF60, POLR2B ALDH1A1 3867/4885LMNA 3427/4885SMN1; SMN2 2216/4885
US-20120141938-A1 BASIC COMPOUND, CHEMICALLY AMPLIFIED RESIST COMPOSITION, AND PATTERNING PROCESS GABRA5, GABRB1, GABBR1 ALDH1A1 789/4885LMNA 2000/4885SMN1; SMN2 1797/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.