SCHEMBL9610296

SCHEMBL9610296

C=C(C)C(=O)OC(C)(C)C1CCCC1

nearest known ligand 0.37

Predicted protein targets (top 3)

geneUniProtsupporting neighboursconfidence
ALDH1A1 P00352 2/20 0.37
TSHR P16473 1/20 0.31
EPHX1 P07099 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL106840 0.98 ALDH1A1 (0.35) ALDH1A1EPHX1
SCHEMBL16807394 0.96 ALDH1A1 (0.37) ALDH1A1TSHR
SCHEMBL674286 0.92 ALDH1A1 (0.39) ALDH1A1TSHR
SCHEMBL15472998 0.87 EPHX1 (0.36) ALDH1A1EPHX1
SCHEMBL2735083 0.85 ALDH1A1 (0.34) ALDH1A1
SCHEMBL18776052 0.85 ALDH1A1 (0.34) ALDH1A1
SCHEMBL12098115 0.85 ALDH1A1 (0.37) ALDH1A1TSHREPHX1
SCHEMBL22103862 0.84 ALDH1A1 (0.33) ALDH1A1TSHR
SCHEMBL2510208 0.83 ALDH1A1 (0.31) ALDH1A1
SCHEMBL677915 0.83 ALDH1A1 (0.35) ALDH1A1EPHX1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 60 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-112980543-B High viscosity index comb polymer viscosity modifiers and methods of using the same to alter lubricant viscosity 英菲诺姆国际有限公司 2023-12-19 CN disclosed
CN-112980549-B High viscosity index comb polymer viscosity modifiers and methods of using the same to alter lubricant viscosity 英菲诺姆国际有限公司 2023-12-15 CN disclosed
EP-3839018-B1 HIGH VISCOSITY INDEX COMB POLYMER VISCOSITY MODIFIERS AND METHODS OF MODIFYING LUBRICANT VISCOSITY USING SAME INFINEUM INT LTD (GB) 2023-10-18 EP disclosed
US-20230305398-A1 RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-09-28 US disclosed
US-20230305398-A1 RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-09-28 US disclosed
EP-3839019-B1 HIGH VISCOSITY INDEX COMB POLYMER VISCOSITY MODIFIERS AND METHODS OF MODIFYING LUBRICANT VISCOSITY USING SAME INFINEUM INT LTD (GB) 2023-08-02 EP disclosed
US-11685874-B2 High viscosity index comb polymer viscosity modifiers and methods of modifying lubricant viscosity using same INFINEUM INTERNATIONAL LIMITED (GB) 2023-06-27 US disclosed
US-11384311-B2 High viscosity index comb polymer viscosity modifiers and methods of modifying lubricant viscosity using same INFINEUM INTERNATIONAL LIMITED (GB) 2022-07-12 US disclosed
US-11365273-B2 High viscosity index comb polymer viscosity modifiers and methods of modifying lubricant viscosity using same INFINEUM INTERNATIONAL LIMITED (GB) 2022-06-21 US disclosed
US-20220169947-A1 High Viscosity Index Comb Polymer Viscosity Modifiers and Methods of Modifying Lubricant Viscosity Using Same INFINEUM INTERNATIONAL LIMITED (GB) 2022-06-02 US disclosed
US-20120135349-A1 POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-05-31 US disclosed
US-20120135349-A1 POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-05-31 US disclosed
US-7955780-B2 Positive resist composition and pattern forming method using the same FUJIFILM CORPORATION (JP) 2011-06-07 US disclosed
US-7955780-B2 Positive resist composition and pattern forming method using the same FUJIFILM CORPORATION (JP) 2011-06-07 US disclosed
US-20100203451-A1 POSITIVE RESIST COMPOSITION AND PATTERN FORMING METHOD USING THE SAME FUJIFILM CORPORATION (JP) 2010-08-12 US disclosed
US-20100203451-A1 POSITIVE RESIST COMPOSITION AND PATTERN FORMING METHOD USING THE SAME FUJIFILM CORPORATION (JP) 2010-08-12 US disclosed
US-7648817-B2 Resin decomposition by acid; increase solubility of alkaline developer FUJIFILM CORPORATION (JP) 2010-01-19 US disclosed
US-7648817-B2 Resin decomposition by acid; increase solubility of alkaline developer FUJIFILM CORPORATION (JP) 2010-01-19 US disclosed
US-20080206669-A1 POSITIVE WORKING RESIST COMPOSITION AND PATTERN FORMING METHOD FUJIFILM CORPORATION (JP) 2008-08-28 US disclosed
US-20080206669-A1 POSITIVE WORKING RESIST COMPOSITION AND PATTERN FORMING METHOD FUJIFILM CORPORATION (JP) 2008-08-28 US disclosed