SCHEMBL9610336

SCHEMBL9610336

C=C(C)C(=O)OC1(c2ccco2)c2ccccc2-c2ccccc21

nearest known ligand 0.36

Predicted protein targets (top 18)

geneUniProtsupporting neighboursconfidence
ELANE P08246 1/20 0.35
ALDH1A1 P00352 5/20 0.34
MAPT P10636 3/20 0.34
ITGA4 P13612 1/20 0.34
KMT2A Q03164 3/20 0.33
MEN1 O00255 2/20 0.33
TDP1 Q9NUW8 2/20 0.33
KDM4E B2RXH2 2/20 0.33
LMNA P02545 2/20 0.33
USP2 O75604 1/20 0.33
HTT P42858 1/20 0.33
PDK2 Q15119 1/20 0.32
HCAR2 Q8TDS4 1/20 0.32
THRB P10828 1/20 0.32
KIF11 P52732 1/20 0.30
L3MBTL1 Q9Y468 1/20 0.30
GAA P10253 1/20 0.30
SMN1; SMN2 Q16637 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL9610574 0.94 ALDH1A1 (0.33) ELANEALDH1A1MAPTKMT2AMEN1
SCHEMBL11964303 0.91 KDM4E (0.31) ALDH1A1MAPTKMT2AMEN1TDP1
SCHEMBL9610589 0.87 ALDH1A1 (0.35) ELANEALDH1A1MAPTKMT2AMEN1
SCHEMBL9610559 0.87 ALDH1A1 (0.34) ELANEALDH1A1MAPTKMT2AMEN1
SCHEMBL19771486 0.84 PDK2 (0.31) PDK2
SCHEMBL19335506 0.79 PDK2 (0.30) PDK2
SCHEMBL2774896 0.79 ELANE (0.42) ELANEALDH1A1MAPTITGA4KMT2A
SCHEMBL9610334 0.77 ELANE (0.34) ELANEALDH1A1MAPTITGA4KMT2A
SCHEMBL19719071 0.77
SCHEMBL19335469 0.75

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 105 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-10007178-B2 Positive resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2018-06-26 US disclosed
US-10007178-B2 Positive resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2018-06-26 US disclosed
US-9869931-B2 Resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2018-01-16 US disclosed
US-9846360-B2 Resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2017-12-19 US disclosed
US-9846360-B2 Resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2017-12-19 US disclosed
US-9760010-B2 Patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2017-09-12 US disclosed
US-9760010-B2 Patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2017-09-12 US disclosed
US-9645498-B2 Developer and patterning process using the same SHIN-ETSU CHEMICAL CO., LTD. (JP) 2017-05-09 US disclosed
US-9645498-B2 Developer and patterning process using the same SHIN-ETSU CHEMICAL CO., LTD. (JP) 2017-05-09 US disclosed
US-20170003590-A1 RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2017-01-05 US disclosed
US-8450042-B2 Positive resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2013-05-28 US disclosed
US-20130089820-A1 RESIST TOP COAT COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2013-04-11 US disclosed
US-20130029270-A1 RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2013-01-31 US disclosed
US-20130029270-A1 RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2013-01-31 US disclosed
US-20120202153-A1 RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-08-09 US disclosed
US-20120202153-A1 RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-08-09 US disclosed
US-20120135349-A1 POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-05-31 US disclosed
US-20120135349-A1 POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-05-31 US disclosed
US-20100227274-A1 POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2010-09-09 US disclosed
US-20100227274-A1 POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2010-09-09 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (1 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20130089820-A1 RESIST TOP COAT COMPOSITION AND PATTERNING PROCESS PSMB2, PSMC6, PSMB1 ELANE 2813/4885ALDH1A1 3732/4885MAPT 958/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.