Predicted protein targets (top 15)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | ACP3 | P15309 | 1/20 | 0.42 |
| ▸ | PIN1 | Q13526 | 2/20 | 0.41 |
| ▸ | CHRNA7 | P36544 | 2/20 | 0.40 |
| ▸ | CYP3A4 | P08684 | 1/20 | 0.40 |
| ▸ | CYP2D6 | P10635 | 1/20 | 0.40 |
| ▸ | HIF1A | Q16665 | 1/20 | 0.40 |
| ▸ | CHRNB2 | P17787 | 1/20 | 0.40 |
| ▸ | CHRNA4 | P43681 | 1/20 | 0.40 |
| ▸ | HTT | P42858 | 1/20 | 0.40 |
| ▸ | CHRM2 | P08172 | 1/20 | 0.39 |
| ▸ | CHRM1 | P11229 | 1/20 | 0.39 |
| ▸ | CHRM3 | P20309 | 1/20 | 0.39 |
| ▸ | POLB | P06746 | 1/20 | 0.39 |
| ▸ | TAS1R3 | Q7RTX0 | 1/20 | 0.37 |
| ▸ | TAS1R1 | Q7RTX1 | 1/20 | 0.37 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL9610483 | 0.90 | HDAC4 (0.44) | PIN1POLB | |
| SCHEMBL19771507 | 0.83 | ALDH1A1 (0.35) | PIN1TAS1R3TAS1R1 | |
| SCHEMBL20306473 | 0.83 | POLB (0.41) | PIN1CYP2D6HTTPOLB | |
| SCHEMBL2188983 | 0.83 | IDO1 (0.50) | PIN1 | |
| SCHEMBL19771584 | 0.83 | ALDH1A1 (0.40) | CYP3A4 | |
| SCHEMBL11964313 | 0.82 | HSD17B3 (0.40) | POLB | |
| SCHEMBL9610482 | 0.82 | ALDH1A1 (0.52) | POLB | |
| SCHEMBL2775729 | 0.81 | POLB (0.55) | POLB | |
| SCHEMBL31567542 | 0.81 | POLB (0.55) | POLB | |
| SCHEMBL29733350 | 0.80 | IDO1 (0.53) | HTTTAS1R3TAS1R1 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 107 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-10007178-B2 | Positive resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2018-06-26 | — | — | US | disclosed |
| US-9869931-B2 | Resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2018-01-16 | — | — | US | disclosed |
| US-9869931-B2 | Resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2018-01-16 | — | — | US | disclosed |
| US-9846360-B2 | Resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2017-12-19 | — | — | US | disclosed |
| US-9846360-B2 | Resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2017-12-19 | — | — | US | disclosed |
| US-9760010-B2 | Patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2017-09-12 | — | — | US | disclosed |
| US-9760010-B2 | Patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2017-09-12 | — | — | US | disclosed |
| US-9645498-B2 | Developer and patterning process using the same | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2017-05-09 | — | — | US | disclosed |
| US-9645498-B2 | Developer and patterning process using the same | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2017-05-09 | — | — | US | disclosed |
| US-20170003590-A1 | RESIST COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2017-01-05 | — | — | US | disclosed |
| US-20130143162-A1 | RESIST-PROTECTIVE FILM-FORMING COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2013-06-06 | — | — | US | disclosed |
| US-20130143162-A1 | RESIST-PROTECTIVE FILM-FORMING COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2013-06-06 | — | — | US | disclosed |
| US-20130089820-A1 | RESIST TOP COAT COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2013-04-11 | — | — | US | disclosed |
| US-20130089820-A1 | RESIST TOP COAT COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2013-04-11 | — | — | US | disclosed |
| US-20130029270-A1 | RESIST COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2013-01-31 | — | — | US | disclosed |
| US-20130029270-A1 | RESIST COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2013-01-31 | — | — | US | disclosed |
| US-20120202153-A1 | RESIST COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2012-08-09 | — | — | US | disclosed |
| US-20120202153-A1 | RESIST COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2012-08-09 | — | — | US | disclosed |
| US-20120135349-A1 | POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2012-05-31 | — | — | US | disclosed |
| US-20120135349-A1 | POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2012-05-31 | — | — | US | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (1 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-20130089820-A1 | RESIST TOP COAT COMPOSITION AND PATTERNING PROCESS | PSMB2, PSMC6, PSMB1 | ACP3 4101/4885PIN1 2506/4885CHRNA7 3767/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.