Predicted protein targets (top 9)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | CNR2 | P34972 | 1/20 | 0.32 |
| ▸ | CYP1A2 | P05177 | 1/20 | 0.32 |
| ▸ | CYP2D6 | P10635 | 1/20 | 0.32 |
| ▸ | CYP2C9 | P11712 | 1/20 | 0.32 |
| ▸ | CYP2C19 | P33261 | 1/20 | 0.32 |
| ▸ | HIF1A | Q16665 | 1/20 | 0.32 |
| ▸ | HSD17B10 | Q99714 | 1/20 | 0.32 |
| ▸ | EPHX2 | P34913 | 2/20 | 0.30 |
| ▸ | CYP19A1 | P11511 | 1/20 | 0.30 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL14491221 | 1.00 | CNR2 (0.32) | CNR2CYP1A2CYP2D6CYP2C9CYP2C19 | |
| SCHEMBL14040417 | 1.00 | CNR2 (0.32) | CNR2CYP1A2CYP2D6CYP2C9CYP2C19 | |
| SCHEMBL16385622 | 1.00 | CNR2 (0.32) | CNR2CYP1A2CYP2D6CYP2C9CYP2C19 | |
| SCHEMBL4995636 | 0.98 | CNR2 (0.32) | CNR2CYP1A2CYP2D6CYP2C9CYP2C19 | |
| SCHEMBL23021671 | 0.90 | — | — | |
| SCHEMBL12256432 | 0.90 | CNR2 (0.31) | CNR2CYP1A2CYP2D6CYP2C9CYP2C19 | |
| SCHEMBL973978 | 0.88 | ALDH1A1 (0.33) | CNR2 | |
| Decane SCHEMBL6385306 | 0.88 | EPHX1 (0.36) | CNR2EPHX2 | |
| SCHEMBL27957835 | 0.86 | ALDH1A1 (0.31) | — | |
| SCHEMBL3871089 | 0.85 | L3MBTL1 (0.35) | CNR2HSD17B10EPHX2 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 915 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| WO-2026100367-A1 | RESIST MATERIAL AND PATTERN FORMATION METHOD | 東京応化工業株式会社 | 2026-05-15 | — | — | WO | disclosed |
| US-12386260-B2 | Radiation-sensitive resin composition, method of forming resist pattern, polymer, and compound | JSR CORPORATION (JP) | 2025-08-12 | — | — | US | disclosed |
| WO-2024176973-A1 | METHOD FOR PRODUCING PURIFIED RESIST COMPOSITION, METHOD FOR FORMING RESIST PATTERN, AND PURIFIED RESIST COMPOSITION | 東京応化工業株式会社 | 2024-08-29 | — | — | WO | disclosed |
| US-20240231231-A1 | METHOD FOR FORMING RESIST UNDERLAYER FILM, METHOD FOR PRODUCING SEMICONDUCTOR SUBSTRATE, COMPOSITION, AND RESIST UNDERLAYER FILM | JSR CORPORATION (JP) | 2024-07-11 | — | — | US | disclosed |
| US-20240231231-A1 | METHOD FOR FORMING RESIST UNDERLAYER FILM, METHOD FOR PRODUCING SEMICONDUCTOR SUBSTRATE, COMPOSITION, AND RESIST UNDERLAYER FILM | JSR CORPORATION (JP) | 2024-07-11 | — | — | US | disclosed |
| US-11884839-B2 | Acetal-protected silanol group-containing polysiloxane composition | NISSAN CHEMICAL CORPORATION (JP) | 2024-01-30 | — | — | US | disclosed |
| US-20230400769-A1 | ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE FILM, PATTERN FORMING METHOD, AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE | FUJIFILM CORPORATION (JP) | 2023-12-14 | — | — | US | disclosed |
| US-20230400765-A1 | RADIATION-SENSITIVE RESIN COMPOSITION, METHOD FOR FORMING PATTERN, AND ONIUM SALT COMPOUND | JSR CORPORATION (JP) | 2023-12-14 | — | — | US | disclosed |
| US-20230400765-A1 | RADIATION-SENSITIVE RESIN COMPOSITION, METHOD FOR FORMING PATTERN, AND ONIUM SALT COMPOUND | JSR CORPORATION (JP) | 2023-12-14 | — | — | US | disclosed |
| US-20230375925-A1 | ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE FILM, PATTERN FORMING METHOD, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, COMPOUND, AND RESIN | FUJIFILM CORPORATION (JP) | 2023-11-23 | — | — | US | disclosed |
| US-20060234153-A1 | Radiation-sensitive resin composition | JSR CORPORATION (JP) | 2006-10-19 | — | — | US | disclosed |
| US-20060228648-A1 | Novel sulfonate salts and derivatives, photoacid generators, resist compositions, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. | 2006-10-12 | — | — | US | disclosed |
| EP-1710230-A1 | Novel sulfonate salts and derivatives, photoacid generators, resist compositions, and patterning process | Shin-Etsu Chemical Co., Ltd. (JP) | 2006-10-11 | — | — | EP | disclosed |
| US-20060141383-A1 | Sulfonium salts, radiation- sensitive acid generators, and positive radiator-sensitive resin compositions | JSR CORPORATION (JP) | 2006-06-29 | — | — | US | disclosed |
| US-20060074139-A1 | Acrylic copolymer and radiation-sensitive resin composition | JSR CORPORATION (JP) | 2006-04-06 | — | — | US | disclosed |
| EP-1586570-A1 | SULFONIUM SALTS, RADIATION-SENSITIVE ACID GENERATORS, AND POSITIVE RADIATION-SENSITIVE RESIN COMPOSITIONS | JSR Corporation (JP) | 2005-10-19 | — | — | EP | disclosed |
| EP-1557718-A1 | RADIATION-SENSITIVE RESIN COMPOSITION | JSR Corporation (JP) | 2005-07-27 | — | — | EP | disclosed |
| US-20040048192-A1 | Radiation-sensitive resin composition | JSR CORPORATION (JP) | 2004-03-11 | — | — | US | disclosed |
| US-20030219680-A1 | Photoresists useful for microfabrication utilizing deep ultraviolet rays such as an excimer laser, x-rays such as synchrotron radiation, and electron beams | JSR CORPORATION (JP) | 2003-11-27 | — | — | US | disclosed |
| JP-2003330196-A | RADIATION-SENSITIVE RESIN COMPOSITION | JSR CORP | 2003-11-19 | — | — | JP | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (1 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-20230400765-A1 | RADIATION-SENSITIVE RESIN COMPOSITION, METHOD FOR FORMING PATTERN, AND ONIUM SALT COMPOUND | RFT1, RER1, AFF1 | CNR2 2382/4885CYP1A2 2196/4885CYP2D6 4299/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.