SCHEMBL974525

SCHEMBL974525

CCCC(N)NCCO

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL27362456 0.86 DPP7 (0.40)
SCHEMBL2637709 0.85 SMN1; SMN2 (0.39)
SCHEMBL4583589 0.85 OPRM1 (0.43)
SCHEMBL22443352 0.82
SCHEMBL309584 0.82
SCHEMBL237214 0.80
SCHEMBL27717970 0.78
SCHEMBL10439956 0.78
SCHEMBL8644870 0.78 RRM1 (0.36)
SCHEMBL308611 0.78 OPRM1 (0.39)

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 59 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-114133868-A Water-based insulating paint and preparation method thereof 张宏科 2022-03-04 CN claimed
CN-114133868-A Water-based insulating paint and preparation method thereof 张宏科 2022-03-04 CN disclosed
CN-114133868-A Water-based insulating paint and preparation method thereof 张宏科 2022-03-04 CN disclosed
US-8790990-B2 Silica-based film forming material for formation of air gaps, and method for forming air gaps TOKYO OHKA KOGYO CO., LTD. (JP) 2014-07-29 US disclosed
US-8404786-B2 Polymer and process for producing the same, composition for forming insulating film, and insulating film and method of forming the same JSR CORPORATION (JP) 2013-03-26 US disclosed
EP-1705208-B1 COMPOSITION FOR FORMING INSULATING FILM, METHOD FOR PRODUCING SAME, SILICA INSULATING FILM, AND METHOD FOR FORMING SAME JSR CORP (JP) 2013-03-20 EP disclosed
US-8318582-B2 Method of forming a trench isolation JSR CORPORATION (JP) 2012-11-27 US disclosed
US-20110189833-A1 SILICA-BASED FILM FORMING MATERIAL FOR FORMATION OF AIR GAPS, AND METHOD FOR FORMING AIR GAPS TOKYO OHKA KOGYO CO., LTD. (JP) 2011-08-04 US disclosed
US-7939590-B2 Composition for forming silica-based coating film TOKYO OHKA KOGYO CO., LTD. (JP) 2011-05-10 US disclosed
US-20110077364-A1 COMPOSITION CONTAINING SILICON-CONTAINING POLYMER, CURED PRODUCT OF THE COMPOSITION, SILICON-CONTAINING POLYMER, AND METHOD OF PRODUCING THE SILICON-CONTAINING POLYMER JSR CORPORATION (JP) 2011-03-31 US disclosed
US-20020086167-A1 Composition for film formation, method of film formation, and silica-based film JSR CORPORATION (JP) 2002-07-04 US disclosed
US-6413647-B1 USEFUL AS INTERLAYER DIELECTRIC FILM IN SEMICONDUCTOR DEVICES; MECHANICAL STRENGTH JSR CORPORATION (JP) 2002-07-02 US disclosed
US-6410150-B1 Composition for film formation, method of film formation, and insulating film JSR CORPORATION (JP) 2002-06-25 US disclosed
US-6410151-B1 Composition for film formation, method of film formation, and insulating film JSR CORPORATION (JP) 2002-06-25 US disclosed
US-20010018129-A1 Process for producing silica-based film, silica-based film, insulating film, and semiconductor device JSR CORPORATION (JP) 2001-08-30 US disclosed
EP-1127929-A2 Composition for film formation, method of film formation, and silica-based film JSR Corporation (JP) 2001-08-29 EP disclosed
EP-1122770-A2 Silica-based insulating film and its manufacture JSR Corporation (JP) 2001-08-08 EP disclosed
EP-1090967-A2 Composition for film formation, method of film formation, and insulating film JSR Corporation (JP) 2001-04-11 EP disclosed
EP-1088868-A2 Composition for film formation, method of film formation, and insulating film JSR Corporation (JP) 2001-04-04 EP disclosed
EP-0416360-A2 Copolymers containing secondary amino groups, process for their manufacture and their use as a binder or a binder-component BAYER AG (DE) 1991-03-13 EP disclosed