SCHEMBL975715

SCHEMBL975715

CCCCO[Si](C)(CC[Si](OCCCC)(OCCCC)OCCCC)OCCCC

nearest known ligand 0.33

Predicted protein targets (top 5)

geneUniProtsupporting neighboursconfidence
ADRB2 P07550 1/20 0.33
ADRB1 P08588 1/20 0.33
ADRB3 P13945 1/20 0.33
CYP3A4 P08684 1/20 0.30
TSHR P16473 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL703594 0.91 ADRB2 (0.39) ADRB2ADRB1ADRB3CYP3A4TSHR
SCHEMBL976747 0.88 ADRB2 (0.41) ADRB2ADRB1ADRB3CYP3A4TSHR
SCHEMBL976556 0.86
SCHEMBL3614310 0.84 ADRB2 (0.35) ADRB2ADRB1ADRB3CYP3A4TSHR
SCHEMBL1595849 0.83 ADRB2 (0.38) ADRB2ADRB1ADRB3CYP3A4TSHR
SCHEMBL705364 0.83 ADRB2 (0.38) ADRB2ADRB1ADRB3CYP3A4TSHR
SCHEMBL706695 0.83 ADRB2 (0.38) ADRB2ADRB1ADRB3CYP3A4TSHR
SCHEMBL17209128 0.83 THRB (0.35) TSHR
SCHEMBL28805966 0.83 ADRB2 (0.38) ADRB2ADRB1ADRB3CYP3A4TSHR
SCHEMBL4084291 0.83 ADRB2 (0.38) ADRB2ADRB1ADRB3CYP3A4TSHR

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 140 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-3240822-B1 TERMINAL-FUNCTIONALIZED POLYMER AND RELATED METHODS BRIDGESTONE CORP (JP) 2023-07-26 EP disclosed
CN-112625246-B Terminally functionalized polymers and related methods 株式会社普利司通 2023-01-10 CN disclosed
US-11111338-B2 Terminal-functionalized polymer and related methods BRIDGESTONE CORPORATION (JP) 2021-09-07 US disclosed
CN-112625246-A Terminally functionalized polymers and related methods 株式会社普利司通 2021-04-09 CN disclosed
CN-107428940-B Terminally functionalized polymers and related methods 株式会社普利司通 2020-12-15 CN disclosed
US-20200109242-A1 Terminal-Functionalized Polymer And Related Methods BRIDGESTONE CORPORATION (JP) 2020-04-09 US disclosed
EP-1520891-B1 FILM FORMING COMPOSITION, PROCESS FOR PRODUCING FILM FORMING COMPOSITION, INSULATING FILM FORMING MATERIAL, PROCESS FOR FORMING FILM, AND SILICA-BASED FILM JSR CORP (JP) 2019-05-01 EP disclosed
US-10025188-B2 Resist pattern-forming method JSR CORPORATION (JP) 2018-07-17 US disclosed
US-20180002490-A1 Terminal-Functionalized Polymer And Related Methods BRIDGESTONE CORPORATION (JP) 2018-01-04 US disclosed
US-20170322492-A1 RESIST PATTERN-FORMING METHOD JSR CORPORATION (JP) 2017-11-09 US disclosed
US-20020045693-A1 Composition for film formation, method of film formation and silica-based film JSR CORPORATION (JP) 2002-04-18 US disclosed
US-20020020327-A1 Composition for film formation, method of film formation, and silica-based film JSR CORPORATION (JP) 2002-02-21 US disclosed
US-20010055892-A1 Composition for film formation, process for producing composition for film formation, method of film formation, and silica-based film JSR CORPORATION (JP) 2001-12-27 US disclosed
US-20010051446-A1 Method of manufacturing insulating film-forming material, the insulating film-forming material, and insulating film JSR CORPORATION (JP) 2001-12-13 US disclosed
EP-1160848-A2 Composition for silica-based film formation JSR Corporation (JP) 2001-12-05 EP disclosed
EP-1148105-A2 Composition for film formation, method of film formation, and silica-based film JSR Corporation (JP) 2001-10-24 EP disclosed
EP-1146092-A2 Composition for film formation, method of film formation, and silica-based film JSR Corporation (JP) 2001-10-17 EP disclosed
EP-1127929-A2 Composition for film formation, method of film formation, and silica-based film JSR Corporation (JP) 2001-08-29 EP disclosed
EP-1090967-A2 Composition for film formation, method of film formation, and insulating film JSR Corporation (JP) 2001-04-11 EP disclosed
EP-1088868-A2 Composition for film formation, method of film formation, and insulating film JSR Corporation (JP) 2001-04-04 EP disclosed