Predicted protein targets (top 15)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | DNM1 | Q05193 | 8/20 | 0.39 |
| ▸ | GNAI3 | P08754 | 1/20 | 0.39 |
| ▸ | GNAO1 | P09471 | 1/20 | 0.39 |
| ▸ | GNAI1 | P63096 | 1/20 | 0.39 |
| ▸ | MEN1 | O00255 | 1/20 | 0.39 |
| ▸ | KMT2A | Q03164 | 1/20 | 0.39 |
| ▸ | ALDH1A1 | P00352 | 1/20 | 0.39 |
| ▸ | TSHR | P16473 | 1/20 | 0.39 |
| ▸ | EPHX1 | P07099 | 1/20 | 0.39 |
| ▸ | DPP7 | Q9UHL4 | 1/20 | 0.38 |
| ▸ | SPHK1 | Q9NYA1 | 1/20 | 0.38 |
| ▸ | RRM1 | P23921 | 1/20 | 0.37 |
| ▸ | SIRT6 | Q8N6T7 | 1/20 | 0.35 |
| ▸ | SIRT1 | Q96EB6 | 1/20 | 0.35 |
| ▸ | CASP2 | P42575 | 1/20 | 0.33 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL974500 | 0.94 | GNAI3 (0.45) | DNM1GNAI3GNAO1GNAI1MEN1 | |
| SCHEMBL22806820 | 0.92 | GNAI3 (0.47) | DNM1GNAI3GNAO1GNAI1MEN1 | |
| SCHEMBL22806602 | 0.89 | SPHK1 (0.45) | DNM1GNAI3GNAO1GNAI1MEN1 | |
| SCHEMBL976762 | 0.86 | — | — | |
| SCHEMBL976801 | 0.86 | TSHR (0.38) | MEN1KMT2AALDH1A1TSHREPHX1 | |
| SCHEMBL22806617 | 0.85 | GNAI3 (0.45) | DNM1GNAI3GNAO1GNAI1MEN1 | |
| SCHEMBL12321608 | 0.85 | GNAI3 (0.45) | DNM1GNAI3GNAO1GNAI1MEN1 | |
| SCHEMBL28202544 | 0.84 | DPP7 (0.35) | GNAI3GNAO1GNAI1TSHRDPP7 | |
| SCHEMBL2377049 | 0.84 | DPP7 (0.43) | DNM1GNAI3GNAO1GNAI1MEN1 | |
| SCHEMBL4938031 | 0.84 | ALDH1A1 (0.43) | MEN1KMT2AALDH1A1TSHREPHX1 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 59 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| EP-3144371-B1 | HYDROXYALKYL SUBSTITUTED SUCCINIMIDES AND FUELS CONTAINING THEM | AFTON CHEMICAL CORP (US) | 2021-10-06 | — | — | EP | claimed |
| EP-3986977-A1 | SYNERGISTIC PERFORMANCE OF AMINE BLENDS IN SHALE CONTROL | Huntsman Petrochemical LLC (US) | 2022-04-27 | — | — | EP | disclosed |
| WO-2020256863-A1 | SYNERGISTIC PERFORMANCE OF AMINE BLENDS IN SHALE CONTROL | HUNTSMAN PETROCHEMICAL LLC (US) | 2020-12-24 | — | — | WO | disclosed |
| US-20150296646-A1 | PROTECTIVE PLATE AND DISPLAY DEVICE | SHARP KABUSHIKI KAISHA (JP) | 2015-10-15 | — | — | US | disclosed |
| US-8790990-B2 | Silica-based film forming material for formation of air gaps, and method for forming air gaps | TOKYO OHKA KOGYO CO., LTD. (JP) | 2014-07-29 | — | — | US | disclosed |
| US-8404786-B2 | Polymer and process for producing the same, composition for forming insulating film, and insulating film and method of forming the same | JSR CORPORATION (JP) | 2013-03-26 | — | — | US | disclosed |
| EP-1705208-B1 | COMPOSITION FOR FORMING INSULATING FILM, METHOD FOR PRODUCING SAME, SILICA INSULATING FILM, AND METHOD FOR FORMING SAME | JSR CORP (JP) | 2013-03-20 | — | — | EP | disclosed |
| US-8318582-B2 | Method of forming a trench isolation | JSR CORPORATION (JP) | 2012-11-27 | — | — | US | disclosed |
| US-20110189833-A1 | SILICA-BASED FILM FORMING MATERIAL FOR FORMATION OF AIR GAPS, AND METHOD FOR FORMING AIR GAPS | TOKYO OHKA KOGYO CO., LTD. (JP) | 2011-08-04 | — | — | US | disclosed |
| US-7939590-B2 | Composition for forming silica-based coating film | TOKYO OHKA KOGYO CO., LTD. (JP) | 2011-05-10 | — | — | US | disclosed |
| US-20030157340-A1 | Process for producing silica-based film, silica-based film, insulating film, and semiconductor device | JSR CORPORATION (JP) | 2003-08-21 | — | — | US | disclosed |
| US-20020086167-A1 | Composition for film formation, method of film formation, and silica-based film | JSR CORPORATION (JP) | 2002-07-04 | — | — | US | disclosed |
| US-6413647-B1 | USEFUL AS INTERLAYER DIELECTRIC FILM IN SEMICONDUCTOR DEVICES; MECHANICAL STRENGTH | JSR CORPORATION (JP) | 2002-07-02 | — | — | US | disclosed |
| US-6410151-B1 | Composition for film formation, method of film formation, and insulating film | JSR CORPORATION (JP) | 2002-06-25 | — | — | US | disclosed |
| US-6410150-B1 | Composition for film formation, method of film formation, and insulating film | JSR CORPORATION (JP) | 2002-06-25 | — | — | US | disclosed |
| US-20010018129-A1 | Process for producing silica-based film, silica-based film, insulating film, and semiconductor device | JSR CORPORATION (JP) | 2001-08-30 | — | — | US | disclosed |
| EP-1127929-A2 | Composition for film formation, method of film formation, and silica-based film | JSR Corporation (JP) | 2001-08-29 | — | — | EP | disclosed |
| EP-1122770-A2 | Silica-based insulating film and its manufacture | JSR Corporation (JP) | 2001-08-08 | — | — | EP | disclosed |
| EP-1090967-A2 | Composition for film formation, method of film formation, and insulating film | JSR Corporation (JP) | 2001-04-11 | — | — | EP | disclosed |
| EP-1088868-A2 | Composition for film formation, method of film formation, and insulating film | JSR Corporation (JP) | 2001-04-04 | — | — | EP | disclosed |