SCHEMBL976800

SCHEMBL976800

CC[Si](Oc1ccccc1)(Oc1ccccc1)[Si](Oc1ccccc1)(Oc1ccccc1)Oc1ccccc1

nearest known ligand 0.38

Predicted protein targets (top 15)

geneUniProtsupporting neighboursconfidence
LTA4H P09960 5/20 0.38
CA4 P22748 1/20 0.37
TSHR P16473 1/20 0.35
KCNA3 P22001 1/20 0.34
CHRNB2 P17787 2/20 0.34
CHRNB4 P30926 2/20 0.34
CHRNA3 P32297 2/20 0.34
CHRNA7 P36544 2/20 0.34
CHRNA4 P43681 2/20 0.34
L3MBTL1 Q9Y468 1/20 0.33
KCNH2 Q12809 1/20 0.32
LMNA P02545 1/20 0.32
HTR1D P28221 1/20 0.32
HTR1B P28222 1/20 0.32
TP53 P04637 1/20 0.32

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL976739 0.89 CA4 (0.42) LTA4HCA4TSHRKCNA3CHRNB2
SCHEMBL976072 0.81 LTA4H (0.38) LTA4HCA4TSHRKCNA3CHRNB2
SCHEMBL977952 0.77 KCNA3 (0.46) LTA4HCA4TSHRKCNA3CHRNB2
SCHEMBL646525 0.75 LTA4H (0.50) LTA4HCA4TSHRKCNA3L3MBTL1
SCHEMBL427947 0.75 CA4 (0.42) LTA4HCA4TSHRKCNA3CHRNB2
SCHEMBL431273 0.75 CA4 (0.42) LTA4HCA4TSHRKCNA3CHRNB2
SCHEMBL713108 0.75 CA4 (0.42) LTA4HCA4TSHRKCNA3CHRNB2
SCHEMBL19816761 0.73 LTA4H (0.40) LTA4HCA4TSHRKCNA3CHRNB2
SCHEMBL1609541 0.73 LTA4H (0.40) LTA4HCA4TSHRKCNA3CHRNB2
SCHEMBL10570052 0.73 LTA4H (0.40) LTA4HCA4TSHRKCNA3CHRNB2

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 131 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-1520891-B1 FILM FORMING COMPOSITION, PROCESS FOR PRODUCING FILM FORMING COMPOSITION, INSULATING FILM FORMING MATERIAL, PROCESS FOR FORMING FILM, AND SILICA-BASED FILM JSR CORP (JP) 2019-05-01 EP disclosed
US-10025188-B2 Resist pattern-forming method JSR CORPORATION (JP) 2018-07-17 US disclosed
US-20170322492-A1 RESIST PATTERN-FORMING METHOD JSR CORPORATION (JP) 2017-11-09 US disclosed
US-20160320705-A1 RESIST PATTERN-FORMING METHOD JSR CORPORATION (JP) 2016-11-03 US disclosed
US-9434609-B2 Method for forming pattern, and polysiloxane composition JSR CORPORATION (JP) 2016-09-06 US disclosed
US-9329478-B2 Polysiloxane composition and pattern-forming method JSR CORPORATION (JP) 2016-05-03 US disclosed
US-20160097978-A1 RESIST PATTERN-FORMING METHOD JSR CORPORATION (JP) 2016-04-07 US disclosed
US-9233840-B2 Method for improving self-assembled polymer features INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2016-01-12 US disclosed
US-9126231-B2 Insulation pattern-forming method and insulation pattern-forming material JSR CORPORATION (JP) 2015-09-08 US disclosed
US-9116427-B2 Composition for forming resist underlayer film and pattern-forming method JSR CORPORATION (JP) 2015-08-25 US disclosed
US-20020045693-A1 Composition for film formation, method of film formation and silica-based film JSR CORPORATION (JP) 2002-04-18 US disclosed
US-20020020327-A1 Composition for film formation, method of film formation, and silica-based film JSR CORPORATION (JP) 2002-02-21 US disclosed
US-20010055892-A1 Composition for film formation, process for producing composition for film formation, method of film formation, and silica-based film JSR CORPORATION (JP) 2001-12-27 US disclosed
US-20010051446-A1 Method of manufacturing insulating film-forming material, the insulating film-forming material, and insulating film JSR CORPORATION (JP) 2001-12-13 US disclosed
EP-1160848-A2 Composition for silica-based film formation JSR Corporation (JP) 2001-12-05 EP disclosed
EP-1148105-A2 Composition for film formation, method of film formation, and silica-based film JSR Corporation (JP) 2001-10-24 EP disclosed
EP-1146092-A2 Composition for film formation, method of film formation, and silica-based film JSR Corporation (JP) 2001-10-17 EP disclosed
EP-1127929-A2 Composition for film formation, method of film formation, and silica-based film JSR Corporation (JP) 2001-08-29 EP disclosed
EP-1090967-A2 Composition for film formation, method of film formation, and insulating film JSR Corporation (JP) 2001-04-11 EP disclosed
EP-1088868-A2 Composition for film formation, method of film formation, and insulating film JSR Corporation (JP) 2001-04-04 EP disclosed