Predicted protein targets (top 18)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | KDM4E | B2RXH2 | 1/20 | 0.43 |
| ▸ | MEN1 | O00255 | 1/20 | 0.43 |
| ▸ | RECQL | P46063 | 1/20 | 0.43 |
| ▸ | KMT2A | Q03164 | 1/20 | 0.43 |
| ▸ | EPHX2 | P34913 | 1/20 | 0.41 |
| ▸ | CES2 | O00748 | 2/20 | 0.40 |
| ▸ | CES1 | P23141 | 2/20 | 0.40 |
| ▸ | POLM | Q9NP87 | 1/20 | 0.40 |
| ▸ | POLK | Q9UBT6 | 1/20 | 0.40 |
| ▸ | POLL | Q9UGP5 | 1/20 | 0.40 |
| ▸ | POLH | Q9Y253 | 1/20 | 0.40 |
| ▸ | ESR1 | P03372 | 1/20 | 0.40 |
| ▸ | PTPN1 | P18031 | 1/20 | 0.40 |
| ▸ | ALOX15 | P16050 | 1/20 | 0.40 |
| ▸ | SMN1; SMN2 | Q16637 | 1/20 | 0.40 |
| ▸ | THRA | P10827 | 1/20 | 0.39 |
| ▸ | THRB | P10828 | 1/20 | 0.39 |
| ▸ | P2RX7 | Q99572 | 1/20 | 0.39 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| Hydrochloric Acid SCHEMBL31108777 | 0.99 | KMT2A (0.42) | KDM4EMEN1RECQLKMT2AEPHX2 | |
| SCHEMBL13209946 | 0.85 | TDP1 (0.44) | MEN1KMT2ASMN1; SMN2 | |
| SCHEMBL13209942 | 0.84 | SMN1; SMN2 (0.45) | KDM4EMEN1KMT2APTPN1SMN1; SMN2 | |
| SCHEMBL98573 | 0.84 | SMN1; SMN2 (0.45) | KDM4EMEN1RECQLKMT2AESR1 | |
| SCHEMBL13209941 | 0.84 | SMN1; SMN2 (0.39) | KDM4EMEN1RECQLKMT2ASMN1; SMN2 | |
| SCHEMBL13209947 | 0.83 | ALDH1A1 (0.45) | KDM4EMEN1KMT2ASMN1; SMN2 | |
| SCHEMBL13209940 | 0.82 | ATM (0.40) | KDM4EMEN1RECQLKMT2ACES2 | |
| SCHEMBL13209938 | 0.81 | SMN1; SMN2 (0.40) | KDM4EMEN1KMT2APTPN1SMN1; SMN2 | |
| SCHEMBL13209951 | 0.80 | SMN1; SMN2 (0.40) | KDM4EMEN1KMT2ASMN1; SMN2 | |
| SCHEMBL25715128 | 0.79 | KDM4E (0.45) | KDM4EMEN1RECQLKMT2AEPHX2 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 93 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| EP-4674837-A1 | HETEROPOLYOXOTUNGSTATE COMPOUND, SOLVATE THEREOF, OR MIXTURE OF SAID COMPOUND AND SOLVATE, AND METHOD FOR PRODUCING SAID COMPOUND, SOLVATE, OR MIXTURE | Tokyo Ohka Kogyo Co., Ltd. (JP) | 2026-01-07 | — | — | EP | disclosed |
| WO-2025094854-A1 | METHOD FOR PRODUCING POLYACID SALTS OR MIXTURES THEREOF, AND METHOD FOR REMOVING IMPURITIES | 東京応化工業株式会社 | 2025-05-08 | — | — | WO | disclosed |
| WO-2024181541-A1 | HETEROPOLYOXOTUNGSTATE COMPOUND, SOLVATE THEREOF, OR MIXTURE OF SAID COMPOUND AND SOLVATE, AND METHOD FOR PRODUCING SAID COMPOUND, SOLVATE, OR MIXTURE | 東京応化工業株式会社 | 2024-09-06 | — | — | WO | disclosed |
| US-20180224742-A1 | RESIST COMPOSITION AND RESIST PATTERN FORMING METHOD | TOKYO OHKA KOGYO CO., LTD. (JP) | 2018-08-09 | — | — | US | disclosed |
| US-20180224742-A1 | RESIST COMPOSITION AND RESIST PATTERN FORMING METHOD | TOKYO OHKA KOGYO CO., LTD. (JP) | 2018-08-09 | — | — | US | disclosed |
| US-9778567-B2 | Resist composition, method of forming resist pattern, polymeric compound, compound | TOKYO OHKA KOGYO CO., LTD. (JP) | 2017-10-03 | — | — | US | disclosed |
| US-9778567-B2 | Resist composition, method of forming resist pattern, polymeric compound, compound | TOKYO OHKA KOGYO CO., LTD. (JP) | 2017-10-03 | — | — | US | disclosed |
| US-9618843-B2 | Resist composition and method of forming resist pattern | TOKYO OHKA KOGYO CO., LTD. (JP) | 2017-04-11 | — | — | US | disclosed |
| US-9618842-B2 | Resist composition and method of forming resist pattern | TOKYO OHKA KOGYO CO., LTD. (JP) | 2017-04-11 | — | — | US | disclosed |
| US-9618842-B2 | Resist composition and method of forming resist pattern | TOKYO OHKA KOGYO CO., LTD. (JP) | 2017-04-11 | — | — | US | disclosed |
| US-20110287362-A1 | RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, NOVEL COMPOUND, AND ACID GENERATOR | TOKYO OHKA KOGYO CO., LTD. (JP) | 2011-11-24 | — | — | US | disclosed |
| US-20110262872-A1 | METHOD OF FORMING RESIST PATTERN AND RESIST COMPOSITION | TOKYO OHKA KOGYO CO., LTD. (JP) | 2011-10-27 | — | — | US | disclosed |
| US-20110262864-A1 | Method of forming resist pattern and negative tone-development resist composition | TOKYO OHKA KOGYO CO., LTD. (JP) | 2011-10-27 | — | — | US | disclosed |
| US-20110244392-A1 | POSITIVE RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN AND POLYMERIC COMPOUND | TOKYO OHKA KOGYO CO., LTD. (JP) | 2011-10-06 | — | — | US | disclosed |
| US-20110244399-A1 | METHOD OF FORMING RESIST PATTERN AND NEGATIVE TONE-DEVELOPMENT RESIST COMPOSITION | TOKYO OHKA KOGYO CO., LTD. (JP) | 2011-10-06 | — | — | US | disclosed |
| US-20110165512-A1 | RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN | TOKYO OHKA KOGYO CO., LTD. (JP) | 2011-07-07 | — | — | US | disclosed |
| US-20110097667-A1 | POSITIVE RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, AND POLYMERIC COMPOUND | TOKYO OHKA KOGYO CO., LTD. (JP) | 2011-04-28 | — | — | US | disclosed |
| US-20110008728-A1 | RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN | TOKYO OHKA KOGYO CO., LTD. (JP) | 2011-01-13 | — | — | US | disclosed |
| US-20100273105-A1 | RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, COMPOUND AND METHOD OF PRODUCING THE SAME, ACID GENERATOR | TOKYO OHKA KOGYO CO., LTD. (JP) | 2010-10-28 | — | — | US | disclosed |
| US-20100047724-A1 | POSITIVE RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN | TOKYO OHKA KOGYO CO., LTD. (JP) | 2010-02-25 | — | — | US | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (3 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-20100273105-A1 | RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, COMPOUND AND METHOD OF PRODUCING THE SAME, ACID GENERATOR | RER1, GLRA1, GRIN1 | KDM4E 4402/4885MEN1 153/4885RECQL 625/4885 |
| US-20110287362-A1 | RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, NOVEL COMPOUND, AND ACID GENERATOR | RER1, ASIC1, SCO2 | KDM4E 4548/4885MEN1 321/4885RECQL 546/4885 |
| US-20110262872-A1 | METHOD OF FORMING RESIST PATTERN AND RESIST COMPOSITION | POLR1A, PARG, POLR1G | KDM4E 2598/4885MEN1 963/4885RECQL 160/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.