Predicted protein targets (top 4)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | HSD11B1 | P28845 | 3/20 | 0.36 |
| ▸ | EPHX1 | P07099 | 1/20 | 0.33 |
| ▸ | CYP2C9 | P11712 | 1/20 | 0.33 |
| ▸ | EPHX2 | P34913 | 1/20 | 0.32 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL29226113 | 0.80 | EPHX2 (0.34) | HSD11B1EPHX1CYP2C9EPHX2 | |
| SCHEMBL13460221 | 0.80 | CYP2C9 (0.31) | CYP2C9EPHX2 | |
| SCHEMBL9891401 | 0.80 | CYP2C9 (0.31) | CYP2C9EPHX2 | |
| SCHEMBL17199404 | 0.80 | CYP2C9 (0.31) | CYP2C9EPHX2 | |
| SCHEMBL12783628 | 0.78 | — | — | |
| SCHEMBL7535351 | 0.75 | — | — | |
| SCHEMBL1499946 | 0.73 | EPHX1 (0.39) | HSD11B1EPHX1CYP2C9EPHX2 | |
| SCHEMBL14461589 | 0.73 | — | — | |
| SCHEMBL8490710 | 0.72 | EPHX2 (0.30) | CYP2C9EPHX2 | |
| SCHEMBL10229335 | 0.72 | EPHX2 (0.30) | EPHX2 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 20 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-20230400766-A1 | ONIUM SALT, RESIST COMPOSITION AND PATTERN FORMING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-12-14 | — | — | US | disclosed |
| US-20230375928-A1 | Sulfonium-Salt-Type Polymerizable Monomer, Polymer Photoacid Generator, Base Rein, Resist Composition, And Patterning Process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-11-23 | — | — | US | disclosed |
| US-20230367214-A1 | CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION AND RESIST PATTERN FORMING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-11-16 | — | — | US | disclosed |
| US-20230341775-A1 | CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION AND RESIST PATTERN FORMING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-10-26 | — | — | US | disclosed |
| US-20230194986-A1 | CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION AND RESIST PATTERN FORMING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-06-22 | — | — | US | disclosed |
| US-11662663-B2 | Substrate protective film-forming composition and pattern forming process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-05-30 | — | — | US | disclosed |
| US-10000493-B2 | Process and intermediates for the synthesis of 8-[{1-(3,5-bis-(trifluoromethyl)phenyl)-ethoxy}-methyl]-8-phenyl-1,7-diaza-spiro[4.5]decan-2-one compounds | OPKO HEALTH, INC. (US) | 2018-06-19 | — | — | US | disclosed |
| US-9017922-B2 | Chemically amplified resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2015-04-28 | — | — | US | disclosed |
| US-9017922-B2 | Chemically amplified resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2015-04-28 | — | — | US | disclosed |
| US-8921026-B2 | Basic compound, chemically amplified resist composition, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2014-12-30 | — | — | US | disclosed |
| US-8921026-B2 | Basic compound, chemically amplified resist composition, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2014-12-30 | — | — | US | disclosed |
| US-8828641-B2 | Chemically amplified resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2014-09-09 | — | — | US | disclosed |
| US-8828641-B2 | Chemically amplified resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2014-09-09 | — | — | US | disclosed |
| US-20140080055-A1 | CHEMICALLY AMPLIFIED RESIST COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2014-03-20 | — | — | US | disclosed |
| US-20140080055-A1 | CHEMICALLY AMPLIFIED RESIST COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2014-03-20 | — | — | US | disclosed |
| US-20120141938-A1 | BASIC COMPOUND, CHEMICALLY AMPLIFIED RESIST COMPOSITION, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2012-06-07 | — | — | US | disclosed |
| US-20120141938-A1 | BASIC COMPOUND, CHEMICALLY AMPLIFIED RESIST COMPOSITION, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2012-06-07 | — | — | US | disclosed |
| US-20110129777-A1 | CHEMICALLY AMPLIFIED RESIST COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2011-06-02 | — | — | US | disclosed |
| US-20110129777-A1 | CHEMICALLY AMPLIFIED RESIST COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2011-06-02 | — | — | US | disclosed |
| EP-2100870-A1 | COMPOUND AND RADIATION-SENSITIVE COMPOSITION | JSR Corporation (JP) | 2009-09-16 | — | — | EP | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (3 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-10000493-B2 | Process and intermediates for the synthesis of 8-[{1-(3,5-bis-(trifluoromethyl)phenyl)-ethoxy}-methyl]-8-phenyl-1,7-diaza-spiro[4.5]decan-2-one compounds | SLC30A7, KAT7, ZNF787 | HSD11B1 494/4885EPHX1 3708/4885CYP2C9 674/4885 |
| US-20120141938-A1 | BASIC COMPOUND, CHEMICALLY AMPLIFIED RESIST COMPOSITION, AND PATTERNING PROCESS | GABRA5, GABRB1, GABBR1 | HSD11B1 2736/4885EPHX1 3273/4885CYP2C9 2103/4885 |
| US-20230375928-A1 | Sulfonium-Salt-Type Polymerizable Monomer, Polymer Photoacid Generator, Base Rein, Resist Composition, And Patterning Process | NAF1, RALA, RSU1 | HSD11B1 2207/4885EPHX1 3375/4885CYP2C9 4133/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.