SCHEMBL17199404

SCHEMBL17199404

CC(C)[C@H](C)OC1C2CC3CC(C2)CC1C3

nearest known ligand 0.36

Predicted protein targets (top 2)

geneUniProtsupporting neighboursconfidence
CYP2C9 P11712 1/20 0.31
EPHX2 P34913 1/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL13460221 1.00 CYP2C9 (0.31) CYP2C9EPHX2
SCHEMBL9891401 1.00 CYP2C9 (0.31) CYP2C9EPHX2
SCHEMBL9891403 0.80 HSD11B1 (0.36) CYP2C9EPHX2
SCHEMBL29226113 0.76 EPHX2 (0.34) CYP2C9EPHX2
SCHEMBL12783628 0.74
SCHEMBL7535351 0.71
SCHEMBL14461589 0.70
SCHEMBL1499946 0.70 EPHX1 (0.39) CYP2C9EPHX2
SCHEMBL14789966 0.69
SCHEMBL26299276 0.69 TSHR (0.39) EPHX2

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 9 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20170329227-A1 NOVEL SULFONIUM COMPOUND, MAKING METHOD, RESIST COMPOSITION, AND PATTERN FORMING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2017-11-16 US disclosed
US-20170329227-A1 NOVEL SULFONIUM COMPOUND, MAKING METHOD, RESIST COMPOSITION, AND PATTERN FORMING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2017-11-16 US disclosed
US-20170315442-A1 NOVEL CARBOXYLIC ACID ONIUM SALT, CHEMICALLY AMPLIFIED RESIST COMPOSITION, AND PATTERN FORMING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2017-11-02 US disclosed
US-20170299963-A1 MONOMER, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2017-10-19 US disclosed
US-9703193-B2 Onium salt, resist composition, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2017-07-11 US disclosed
US-20160320698-A1 ONIUM SALT, RESIST COMPOSITION, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2016-11-03 US disclosed
EP-3088955-A2 RESIST COMPOSITION AND PATTERNING PROCESS Shin-Etsu Chemical Co., Ltd. (JP) 2016-11-02 EP disclosed
US-9366958-B2 Photoacid generator, chemically amplified resist composition, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2016-06-14 US disclosed
US-20150301449-A1 PHOTOACID GENERATOR, CHEMICALLY AMPLIFIED RESIST COMPOSITION, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2015-10-22 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (4 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20170315442-A1 NOVEL CARBOXYLIC ACID ONIUM SALT, CHEMICALLY AMPLIFIED RESIST COMPOSITION, AND PATTERN FORMING PROCESS ETV6, ELOVL5, ALAD CYP2C9 2094/4885EPHX2 1517/4885
US-20170299963-A1 MONOMER, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS ASIC1, PKD1, ARCN1 CYP2C9 4617/4885EPHX2 3389/4885
US-20160320698-A1 ONIUM SALT, RESIST COMPOSITION, AND PATTERNING PROCESS SLC6A5, EIF2B5, EIF2B4 CYP2C9 2957/4885EPHX2 1454/4885
US-20150301449-A1 PHOTOACID GENERATOR, CHEMICALLY AMPLIFIED RESIST COMPOSITION, AND PATTERNING PROCESS PAG1, PARG, PAH CYP2C9 3258/4885EPHX2 2275/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.