SCHEMBL9908387

SCHEMBL9908387

O=C1OCCC1C(O)C1CC2CCC1C2

nearest known ligand 0.33

Predicted protein targets (top 12)

geneUniProtsupporting neighboursconfidence
LMNA P02545 2/20 0.33
SMN1; SMN2 Q16637 2/20 0.33
HPGD P15428 2/20 0.33
KMT2A Q03164 3/20 0.32
MEN1 O00255 2/20 0.32
POLB P06746 1/20 0.32
ALDH1A1 P00352 2/20 0.31
GAA P10253 1/20 0.31
MAPT P10636 1/20 0.31
ALOX12 P18054 1/20 0.31
HTT P42858 1/20 0.31
NPC1 O15118 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL9908405 0.76 HPGD (0.34) LMNASMN1; SMN2HPGDKMT2AMEN1
SCHEMBL14625819 0.76
SCHEMBL9908399 0.75 MEN1 (0.32) HPGDKMT2AMEN1ALDH1A1NPC1
SCHEMBL3821014 0.73 HPGD (0.42) LMNASMN1; SMN2HPGDKMT2AMEN1
SCHEMBL13482603 0.73
SCHEMBL9908398 0.72 POLB (0.40) SMN1; SMN2HPGDPOLBALDH1A1
SCHEMBL7119984 0.70 KDM4E (0.32) LMNA
SCHEMBL11219160 0.69 LMNA (0.35) LMNASMN1; SMN2HPGDKMT2AMEN1
SCHEMBL7184444 0.69 HPGD (0.42) LMNASMN1; SMN2HPGDKMT2AMEN1
SCHEMBL13992890 0.69

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 5 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-9448482-B2 Pattern forming method, resist pattern formed by the method, method for manufacturing electronic device using the same, and electronic device FUJIFILM CORPORATION (JP) 2016-09-20 US disclosed
US-20150253673-A1 PATTERN FORMING METHOD, RESIST PATTERN FORMED BY THE METHOD, METHOD FOR MANUFACTURING ELECTRONIC DEVICE USING THE SAME, AND ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2015-09-10 US disclosed
US-8198016-B2 Patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-06-12 US disclosed
US-20090286188-A1 Patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2009-11-19 US disclosed
US-7163778-B2 Anti-reflection film material and a substrate having an anti-reflection film and a method for forming a pattern SHIN-ETSU CHEMICAL CO., LTD. (JP) 2007-01-16 US disclosed