SCHEMBL9908405

SCHEMBL9908405

CC(=O)OC(C1CCOC1=O)C1CC2CCC1C2

nearest known ligand 0.34

Predicted protein targets (top 8)

geneUniProtsupporting neighboursconfidence
HPGD P15428 2/20 0.34
LMNA P02545 1/20 0.34
SMN1; SMN2 Q16637 1/20 0.34
KMT2A Q03164 5/20 0.33
ALDH1A1 P00352 4/20 0.33
POLB P06746 3/20 0.33
MEN1 O00255 3/20 0.33
NPC1 O15118 1/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL14625814 0.80
SCHEMBL9908411 0.77 ALDH1A1 (0.32) HPGDLMNAKMT2AALDH1A1MEN1
SCHEMBL9908387 0.76 LMNA (0.33) HPGDLMNASMN1; SMN2KMT2AALDH1A1
SCHEMBL7126089 0.75 ALDH1A1 (0.32) ALDH1A1POLB
SCHEMBL13992888 0.74
SCHEMBL9908412 0.72 NPC1 (0.36) HPGDKMT2AALDH1A1POLBMEN1
SCHEMBL9908422 0.70 HPGD (0.46) HPGDLMNASMN1; SMN2KMT2AALDH1A1
SCHEMBL9908398 0.68 POLB (0.40) HPGDSMN1; SMN2ALDH1A1POLB
SCHEMBL2994979 0.67 ALDH1A1 (0.44) HPGDLMNASMN1; SMN2KMT2AALDH1A1
SCHEMBL9908399 0.65 MEN1 (0.32) HPGDKMT2AALDH1A1MEN1NPC1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 5 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-9448482-B2 Pattern forming method, resist pattern formed by the method, method for manufacturing electronic device using the same, and electronic device FUJIFILM CORPORATION (JP) 2016-09-20 US disclosed
US-20150253673-A1 PATTERN FORMING METHOD, RESIST PATTERN FORMED BY THE METHOD, METHOD FOR MANUFACTURING ELECTRONIC DEVICE USING THE SAME, AND ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2015-09-10 US disclosed
US-8198016-B2 Patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-06-12 US disclosed
US-20090286188-A1 Patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2009-11-19 US disclosed
US-7163778-B2 Anti-reflection film material and a substrate having an anti-reflection film and a method for forming a pattern SHIN-ETSU CHEMICAL CO., LTD. (JP) 2007-01-16 US disclosed