SCHEMBL991056

SCHEMBL991056

CCCOc1ccc(-c2nc(C(Cl)(Cl)Cl)nc(C(Cl)(Cl)Cl)n2)cc1

nearest known ligand 0.50

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
ACACB O00763 1/20 0.50
ACACA Q13085 1/20 0.50
ALDH1A1 P00352 5/20 0.49
KDM4E B2RXH2 5/20 0.49
HPGD P15428 4/20 0.49
MAPT P10636 4/20 0.49
CYP1A2 P05177 2/20 0.49
GAA P10253 2/20 0.49
CYP2C19 P33261 2/20 0.49
RAB9A P51151 9/20 0.49
NPC1 O15118 8/20 0.49
SMN1; SMN2 Q16637 6/20 0.49
HSD17B10 Q99714 3/20 0.49
S1PR1 P21453 1/20 0.48
S1PR3 Q99500 1/20 0.48
ALOX12 P18054 1/20 0.46
TP53 P04637 2/20 0.44
CYP19A1 P11511 1/20 0.43
CYP2C9 P11712 1/20 0.43
CYP3A4 P08684 1/20 0.42

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL990934 0.94 RAB9A (0.56) ACACBACACAALDH1A1KDM4EHPGD
SCHEMBL13578477 0.92 TUBB4A (0.48) ACACBACACAALDH1A1KDM4EHPGD
SCHEMBL15382000 0.88 RARB (0.52) ALDH1A1KDM4EHPGDMAPTCYP1A2
SCHEMBL991686 0.87 TP53 (0.47) ALDH1A1KDM4EHPGDMAPTCYP1A2
SCHEMBL8956327 0.86 NPC1 (0.49) ALDH1A1KDM4EHPGDMAPTCYP1A2
SCHEMBL8605824 0.86 NR1I2 (0.44) ACACBACACAALDH1A1KDM4EHPGD
SCHEMBL13578485 0.84 XDH (0.62) ALDH1A1KDM4EMAPTRAB9ANPC1
SCHEMBL28131880 0.83 ACACB (0.61) ACACBACACAALDH1A1KDM4EHPGD
SCHEMBL22714158 0.81 FYN (0.38) ALDH1A1KDM4EHPGDMAPTCYP1A2
SCHEMBL13578484 0.80 TLR4 (0.41) ALDH1A1KDM4EHPGDMAPTCYP1A2

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 16 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-1687678-B1 CHEMICALLY AMPLIFIED POSITIVE PHOTOSENSITIVE THERMOSETTING RESIN COMPOSITION, METHOD OF FORMING CURED ARTICLE AND USE OF THE METHOD FOR PRODUCING FUNCTIONAL DEVICE TOKYO OHKA KOGYO CO LTD (JP) 2013-07-31 EP disclosed
US-7871756-B2 Chemically amplified positive photosensitive thermosetting resin composition, method of forming cured article, and method of producing functional device TOKYO OHKA KOGYO CO., LTD. (JP) 2011-01-18 US disclosed
US-7816072-B2 Positive resist composition and method for forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2010-10-19 US disclosed
US-7629051-B2 Optical film containing fluorinated photopolymerization initiator, antireflective film, polarizing plate and image display unit including same FUJIFILM CORPORATION (JP) 2009-12-08 US disclosed
US-20090081590-A1 NEGATIVE RESIST COMPOSITION AND PROCESS FOR FORMING RESIST PATTERNS TOKYO OHKA KOGYO CO., LTD. (JP) 2009-03-26 US disclosed
US-20090068594-A1 POSITIVE RESIST COMPOSITION AND METHOD FOR FORMING RESIST PATTERN TOKYO OHKA KOGYO CO., LTD. (JP) 2009-03-12 US disclosed
US-7358028-B2 Chemically amplified positive photo resist composition and method for forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2008-04-15 US disclosed
US-20080044764-A1 Chemically Amplified Positive Photosensitive Thermosetting Resin Composition, Method Of Forming Cured Article, And Method Of Producing Functional Device TOKYO OHKA KOGYO CO., LTD. (JP) 2008-02-21 US disclosed
US-7329478-B2 Chemical amplified positive photo resist composition and method for forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2008-02-12 US disclosed
US-20070117045-A1 CHEMICAL AMPLIFICATION TYPE POSITIVE PHOTORESIST COMPOSITION AND RESIST PATTERN FORMING METHOD TOKYO OHKA KOGYO CO., LTD. (JP) 2007-05-24 US disclosed
US-7105265-B2 Method for removing resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2006-09-12 US disclosed
US-20060003260-A1 Chemical amplified positive photo resist composition and method for forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2006-01-05 US disclosed
US-20050244740-A1 Chemically amplified positive photo resist composition and method for forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2005-11-03 US disclosed
US-20050130055-A1 Method and removing resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2005-06-16 US disclosed
US-5180653-A Triazine Compound, Cresol Novolak, Alkoxymethylated Melamine TOKYO OHKA KOGYO CO., LTD. (JP) 1993-01-19 US disclosed
US-5057397-A Fine patterning of semiconductor TOKYO OHKA KOGYO CO., LTD. (JP) 1991-10-15 US disclosed