Predicted protein targets (top 1)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | LIPA | P38571 | 1/20 | 0.32 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL20064005 | 1.00 | LIPA (0.32) | LIPA | |
| SCHEMBL22624243 | 0.90 | LIPA (0.36) | LIPA | |
| SCHEMBL10234936 | 0.90 | LIPA (0.36) | LIPA | |
| SCHEMBL9924468 | 0.81 | LIPA (0.32) | LIPA | |
| SCHEMBL8487570 | 0.81 | LIPA (0.32) | LIPA | |
| SCHEMBL8488751 | 0.81 | LIPA (0.32) | LIPA | |
| SCHEMBL15132663 | 0.81 | LIPA (0.32) | LIPA | |
| SCHEMBL20064013 | 0.79 | LIPA (0.32) | LIPA | |
| SCHEMBL8484362 | 0.79 | LIPA (0.32) | LIPA | |
| SCHEMBL3414815 | 0.78 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 22 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-20230229083-A1 | PHOTORESIST COMPOSITIONS FOR EUV AND METHODS FOR MANUFACTURING SEMICONDUCTOR DEVICES USING THE SAME | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2023-07-20 | — | — | US | disclosed |
| US-9488914-B2 | Fluorine-containing sulfonic acid salt, fluorine-containing sulfonic acid salt resin, resist composition, and pattern forming method using same | CENTRAL GLASS COMPANY, LIMITED (JP) | 2016-11-08 | — | — | US | disclosed |
| US-9115074-B2 | Fluorinated monomer, polymer, resist composition, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2015-08-25 | — | — | US | disclosed |
| US-9086628-B2 | Resist protective film-forming composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2015-07-21 | — | — | US | disclosed |
| US-20150198879-A1 | Fluorine-Containing Sulfonic Acid Salt, Fluorine-Containing Sulfonic Acid Salt Resin, Resist Composition, and Pattern Forming Method Using Same | CENTRAL GLASS COMPANY, LIMITED (JP) | 2015-07-16 | — | — | US | disclosed |
| US-8945809-B2 | Fluorinated monomer, fluorinated polymer, resist composition, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2015-02-03 | — | — | US | disclosed |
| US-8933251-B2 | Fluorinated monomer of cyclic acetal structure, polymer, resist protective coating composition, resist composition, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2015-01-13 | — | — | US | disclosed |
| US-8916331-B2 | Resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2014-12-23 | — | — | US | disclosed |
| US-20140114080-A1 | FLUORINATED MONOMER, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2014-04-24 | — | — | US | disclosed |
| US-8647808-B2 | Fluorinated monomer, polymer, resist composition, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2014-02-11 | — | — | US | disclosed |
| US-20130084517-A1 | RESIST PROTECTIVE FILM-FORMING COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2013-04-04 | — | — | US | disclosed |
| US-20130034813-A1 | CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION FOR ArF IMMERSION LITHOGRAPHY AND PATTERN FORMING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2013-02-07 | — | — | US | disclosed |
| EP-2466379-A1 | Resist composition and patterning process | Shin-Etsu Chemical Co., Ltd. (JP) | 2012-06-20 | — | — | EP | disclosed |
| US-20120148945-A1 | RESIST COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2012-06-14 | — | — | US | disclosed |
| US-20120077126-A1 | Fluorine-Containing Compound, Fluorine-Containing Polymer Compound, Resist Composition, Top Coat Composition And Pattern Formation Method | CENTRAL GLASS COMPANY, LIMITED (JP) | 2012-03-29 | — | — | US | disclosed |
| US-20110305979-A1 | RESIST TOP COAT COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2011-12-15 | — | — | US | disclosed |
| US-20110250539-A1 | FLUORINATED MONOMER, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2011-10-13 | — | — | US | disclosed |
| US-20110177455-A1 | POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2011-07-21 | — | — | US | disclosed |
| US-20110151381-A1 | FLUORINATED MONOMER, FLUORINATED POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2011-06-23 | — | — | US | disclosed |
| EP-2090598-A1 | Polymer, resist composition, and patterning process | Shin-Etsu Chemical Co., Ltd. (JP) | 2009-08-19 | — | — | EP | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (6 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-20110250539-A1 | FLUORINATED MONOMER, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS | H1-0, FRG1, H1-3 | LIPA 1682/4885 |
| US-20110151381-A1 | FLUORINATED MONOMER, FLUORINATED POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS | AFF1, H1-0, FRG1 | LIPA 1659/4885 |
| US-20140114080-A1 | FLUORINATED MONOMER, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS | H1-0, FRG1, H1-3 | LIPA 1682/4885 |
| US-20150198879-A1 | Fluorine-Containing Sulfonic Acid Salt, Fluorine-Containing Sulfonic Acid Salt Resin, Resist Composition, and Pattern Forming Method Using Same | RER1, SMARCC1, SMCHD1 | LIPA 2780/4885 |
| US-20130034813-A1 | CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION FOR ArF IMMERSION LITHOGRAPHY AND PATTERN FORMING PROCESS | ARFIP2, ARF1, ARF4 | LIPA 356/4885 |
| US-20120077126-A1 | Fluorine-Containing Compound, Fluorine-Containing Polymer Compound, Resist Composition, Top Coat Composition And Pattern Formation Method | FRG1, AFF2, FBXL19 | LIPA 2207/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.