SCHEMBL9924528

SCHEMBL9924528

CCC(C)(C)C(=O)OC1CC(C)CC(C)(C)C1

nearest known ligand 0.47

Predicted protein targets (top 13)

geneUniProtsupporting neighboursconfidence
ALDH1A1 P00352 3/20 0.47
LMNA P02545 2/20 0.47
CYP3A4 P08684 2/20 0.47
CYP2C9 P11712 2/20 0.47
CYP1A2 P05177 1/20 0.47
CYP2C19 P33261 1/20 0.47
NR1I2 O75469 1/20 0.45
ABCB11 O95342 1/20 0.45
MEN1 O00255 2/20 0.38
KMT2A Q03164 2/20 0.38
CTDSP1 Q9GZU7 1/20 0.35
HTT P42858 1/20 0.32
HMGCR P04035 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL25494679 0.84 LMNA (0.51) ALDH1A1LMNACYP3A4CYP2C9CYP1A2
SCHEMBL130773 0.81
SCHEMBL131566 0.78 CYP19A1 (0.42) ALDH1A1CYP3A4NR1I2ABCB11MEN1
SCHEMBL272451 0.78 ALDH1A1 (0.51) ALDH1A1LMNACYP3A4CYP2C9CYP1A2
SCHEMBL272452 0.78 ALDH1A1 (0.51) ALDH1A1LMNACYP3A4CYP2C9CYP1A2
SCHEMBL272450 0.78 ALDH1A1 (0.51) ALDH1A1LMNACYP3A4CYP2C9CYP1A2
SCHEMBL28631478 0.78 ALDH1A1 (0.51) ALDH1A1LMNACYP3A4CYP2C9CYP1A2
SCHEMBL19322847 0.77 HSD11B1 (0.32)
SCHEMBL11591288 0.77 ALDH1A1 (0.56) ALDH1A1LMNACYP3A4CYP2C9CYP1A2
SCHEMBL11591282 0.77 ALDH1A1 (0.56) ALDH1A1LMNACYP3A4CYP2C9CYP1A2

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 15 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-11795334-B2 Photo-curable ink composition and method for forming image FUJIFILM CORPORATION (JP) 2023-10-24 US disclosed
US-10175578-B2 Pattern forming method, composition for forming protective film, method for manufacturing electronic device, and electronic device FUJIFILM CORPORATION (JP) 2019-01-08 US disclosed
US-20180162979-A1 PHOTOSENSITIVE COMPOSITION, IMAGE FORMING METHOD, FILM FORMING METHOD, RESIN, IMAGE, AND FILM FUJIFILM CORPORATION (JP) 2018-06-14 US disclosed
US-9927705-B2 Additive for resist underlayer film-forming composition and resist underlayer film-forming composition containing the same NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2018-03-27 US disclosed
US-20170176862-A1 PATTERN FORMING METHOD, COMPOSITION FOR FORMING PROTECTIVE FILM, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, AND ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2017-06-22 US disclosed
US-20170176862-A1 PATTERN FORMING METHOD, COMPOSITION FOR FORMING PROTECTIVE FILM, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, AND ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2017-06-22 US disclosed
US-20160147152-A1 ADDITIVE FOR RESIST UNDERLAYER FILM-FORMING COMPOSITION AND RESIST UNDERLAYER FILM-FORMING COMPOSITION CONTAINING THE SAME NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2016-05-26 US disclosed
US-9086628-B2 Resist protective film-forming composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2015-07-21 US disclosed
US-9086628-B2 Resist protective film-forming composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2015-07-21 US disclosed
US-8916331-B2 Resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2014-12-23 US disclosed
US-8916331-B2 Resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2014-12-23 US disclosed
US-20130084517-A1 RESIST PROTECTIVE FILM-FORMING COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2013-04-04 US disclosed
US-20130084517-A1 RESIST PROTECTIVE FILM-FORMING COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2013-04-04 US disclosed
US-20130034813-A1 CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION FOR ArF IMMERSION LITHOGRAPHY AND PATTERN FORMING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2013-02-07 US disclosed
US-20120148945-A1 RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-06-14 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (1 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20130034813-A1 CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION FOR ArF IMMERSION LITHOGRAPHY AND PATTERN FORMING PROCESS ARFIP2, ARF1, ARF4 ALDH1A1 3196/4885LMNA 3585/4885CYP3A4 4767/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.