Predicted protein targets (top 12)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | EPHX1 | P07099 | 1/20 | 0.42 |
| ▸ | EPHX2 | P34913 | 9/20 | 0.41 |
| ▸ | ALDH1A1 | P00352 | 5/20 | 0.40 |
| ▸ | KMT2A | Q03164 | 2/20 | 0.40 |
| ▸ | NPSR1 | Q6W5P4 | 2/20 | 0.40 |
| ▸ | MEN1 | O00255 | 1/20 | 0.40 |
| ▸ | MAPT | P10636 | 1/20 | 0.40 |
| ▸ | SMN1; SMN2 | Q16637 | 1/20 | 0.37 |
| ▸ | PRKCA | P17252 | 1/20 | 0.36 |
| ▸ | RECQL | P46063 | 1/20 | 0.36 |
| ▸ | CYP17A1 | P05093 | 1/20 | 0.35 |
| ▸ | CYP19A1 | P11511 | 1/20 | 0.35 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL9946445 | 1.00 | EPHX1 (0.42) | EPHX1EPHX2ALDH1A1KMT2ANPSR1 | |
| SCHEMBL19261615 | 1.00 | EPHX1 (0.42) | EPHX1EPHX2ALDH1A1KMT2ANPSR1 | |
| SCHEMBL9924177 | 0.95 | ALDH1A1 (0.42) | EPHX1EPHX2ALDH1A1KMT2ANPSR1 | |
| SCHEMBL9893796 | 0.90 | ALDH1A1 (0.43) | ALDH1A1KMT2ANPSR1MEN1MAPT | |
| SCHEMBL26849863 | 0.83 | EPHX2 (0.58) | EPHX2ALDH1A1KMT2ANPSR1MEN1 | |
| SCHEMBL19796149 | 0.81 | ALDH1A1 (0.46) | ALDH1A1KMT2ANPSR1MEN1MAPT | |
| SCHEMBL24189500 | 0.80 | ALDH1A1 (0.40) | EPHX2ALDH1A1KMT2ANPSR1MEN1 | |
| SCHEMBL23612644 | 0.80 | EPHX1 (0.40) | EPHX1EPHX2 | |
| SCHEMBL9924178 | 0.80 | EPHX2 (0.43) | EPHX2ALDH1A1KMT2ANPSR1MEN1 | |
| SCHEMBL19261005 | 0.80 | EPHX2 (0.43) | EPHX2ALDH1A1KMT2ANPSR1MEN1 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 84 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-20230375924-A1 | EUV Metallic Resist Performance Enhancement Via Additives | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2023-11-23 | — | — | US | disclosed |
| US-20230375924-A1 | EUV Metallic Resist Performance Enhancement Via Additives | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2023-11-23 | — | — | US | disclosed |
| US-20230268178-A1 | PROTECTIVE COMPOSITION AND METHOD OF FORMING PHOTORESIST PATTERN | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2023-08-24 | — | — | US | disclosed |
| US-20210325782-A1 | EUV Metallic Resist Performance Enhancement Via Additives | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2021-10-21 | — | — | US | disclosed |
| US-11054742-B2 | EUV metallic resist performance enhancement via additives | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2021-07-06 | — | — | US | disclosed |
| US-9851637-B2 | Resist composition, method of forming resist pattern, compound, and acid diffusion control agent | TOKYO OHKA KOGYO CO., LTD. (JP) | 2017-12-26 | — | — | US | disclosed |
| US-9846364-B2 | Method of forming resist pattern | TOKYO OHKA KOGYO CO., LTD. (JP) | 2017-12-19 | — | — | US | disclosed |
| US-20170285469-A1 | RESIST COMPOSITION AND METHOD FOR FORMING RESIST PATTERN | TOKYO OHKA KOGYO, CO., LTD. (JP) | 2017-10-05 | — | — | US | disclosed |
| US-9778567-B2 | Resist composition, method of forming resist pattern, polymeric compound, compound | TOKYO OHKA KOGYO CO., LTD. (JP) | 2017-10-03 | — | — | US | disclosed |
| US-9740105-B2 | Resist pattern formation method and resist composition | TOKYO OHKA KOGYO CO., LTD. (JP) | 2017-08-22 | — | — | US | disclosed |
| US-20130115554-A1 | RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN AND POLYMERIC COMPOUND | TOKYO OHKA KOGYO CO., LTD. (JP) | 2013-05-09 | — | — | US | disclosed |
| US-20130095427-A1 | RESIST COMPOSITION FOR EUV OR EB AND METHOD OF FORMING RESIST PATTERN | TOKYO OHKA KOGYO CO., LTD. (JP) | 2013-04-18 | — | — | US | disclosed |
| US-20130071789-A1 | RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN | TOKYO OHKA KOGYO CO., LTD. (JP) | 2013-03-21 | — | — | US | disclosed |
| US-20130022911-A1 | POLYMER, RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN | TOKYO OHKA KOGYO CO., LTD. (JP) | 2013-01-24 | — | — | US | disclosed |
| US-20120308931-A1 | RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN | TOKYO OHKA KOGYO CO., LTD. (JP) | 2012-12-06 | — | — | US | disclosed |
| US-20120301829-A1 | RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, NOVEL COMPOUND, AND ACID GENERATOR | TOKYO OHKA KOGYO CO., LTD. (JP) | 2012-11-29 | — | — | US | disclosed |
| US-20120264052-A1 | RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, AND POLYMERIC COMPOUND | TOKYO OHKA KOGYO CO., LTD (JP) | 2012-10-18 | — | — | US | disclosed |
| US-20120214101-A1 | RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN | TOKYO OHKA KOGYO CO., LTD. (JP) | 2012-08-23 | — | — | US | disclosed |
| US-20120148956-A1 | RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN | TOKYO OHKA KOGYO CO., LTD. (JP) | 2012-06-14 | — | — | US | disclosed |
| US-20120149916-A1 | NOVEL COMPOUND | CENTRAL GLASS CO., LTD. (JP) | 2012-06-14 | — | — | US | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (3 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-20130115554-A1 | RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN AND POLYMERIC COMPOUND | C1R, SLC11A2, C9 | EPHX1 1854/4885EPHX2 664/4885ALDH1A1 1040/4885 |
| US-20120149916-A1 | NOVEL COMPOUND | MRPL11, ABCB7, MRPL21 | EPHX1 3475/4885EPHX2 2967/4885ALDH1A1 1340/4885 |
| US-20120301829-A1 | RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, NOVEL COMPOUND, AND ACID GENERATOR | SCO2, ASIC1, NOX1 | EPHX1 903/4885EPHX2 754/4885ALDH1A1 1048/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.