SCHEMBL9946445

SCHEMBL9946445

O=C(OCCCCCCCCNS(=O)(=O)C(F)(F)F)C12CC3CC(CC(C3)C1)C2

nearest known ligand 0.42

Predicted protein targets (top 12)

geneUniProtsupporting neighboursconfidence
EPHX1 P07099 1/20 0.42
EPHX2 P34913 9/20 0.41
ALDH1A1 P00352 5/20 0.40
KMT2A Q03164 2/20 0.40
NPSR1 Q6W5P4 2/20 0.40
MEN1 O00255 1/20 0.40
MAPT P10636 1/20 0.40
SMN1; SMN2 Q16637 1/20 0.37
PRKCA P17252 1/20 0.36
RECQL P46063 1/20 0.36
CYP17A1 P05093 1/20 0.35
CYP19A1 P11511 1/20 0.35

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL19261615 1.00 EPHX1 (0.42) EPHX1EPHX2ALDH1A1KMT2ANPSR1
SCHEMBL9925523 1.00 EPHX1 (0.42) EPHX1EPHX2ALDH1A1KMT2ANPSR1
SCHEMBL9924177 0.95 ALDH1A1 (0.42) EPHX1EPHX2ALDH1A1KMT2ANPSR1
SCHEMBL9893796 0.90 ALDH1A1 (0.43) ALDH1A1KMT2ANPSR1MEN1MAPT
SCHEMBL26849863 0.83 EPHX2 (0.58) EPHX2ALDH1A1KMT2ANPSR1MEN1
SCHEMBL19796149 0.81 ALDH1A1 (0.46) ALDH1A1KMT2ANPSR1MEN1MAPT
SCHEMBL24189500 0.80 ALDH1A1 (0.40) EPHX2ALDH1A1KMT2ANPSR1MEN1
SCHEMBL23612644 0.80 EPHX1 (0.40) EPHX1EPHX2
SCHEMBL9924178 0.80 EPHX2 (0.43) EPHX2ALDH1A1KMT2ANPSR1MEN1
SCHEMBL19261005 0.80 EPHX2 (0.43) EPHX2ALDH1A1KMT2ANPSR1MEN1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 90 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-9851637-B2 Resist composition, method of forming resist pattern, compound, and acid diffusion control agent TOKYO OHKA KOGYO CO., LTD. (JP) 2017-12-26 US disclosed
US-20170343897-A1 CHEMICAL FOR PHOTOLITHOGRAPHY WITH IMPROVED LIQUID TRANSFER PROPERTY AND RESIST COMPOSITION COMPRISING THE SAME TOKYO OHKA KOGYO CO LTD (JP) 2017-11-30 US disclosed
US-20170285469-A1 RESIST COMPOSITION AND METHOD FOR FORMING RESIST PATTERN TOKYO OHKA KOGYO, CO., LTD. (JP) 2017-10-05 US disclosed
US-9778567-B2 Resist composition, method of forming resist pattern, polymeric compound, compound TOKYO OHKA KOGYO CO., LTD. (JP) 2017-10-03 US disclosed
US-9766541-B2 Positive-type resist composition, method for forming resist pattern, photo-reactive quencher, and polymeric compound TOKYO OHKA KOGYO CO., LTD. (JP) 2017-09-19 US disclosed
US-9696625-B2 Method of forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2017-07-04 US disclosed
US-9690194-B2 Method of forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2017-06-27 US disclosed
US-20170176855-A1 RESIST COMPOSITION, METHOD FOR FORMING RESIST PATTERN, ACID GENERATOR AND COMPOUND TOKYO OHKA KOGYO CO., LTD. (JP) 2017-06-22 US disclosed
US-9682951-B2 Resist composition, method of forming resist pattern, acid generator, photoreactive quencher, and compound TOKYO OHKA KOGYO CO., LTD. (JP) 2017-06-20 US disclosed
US-9678423-B2 Resist composition, method for forming resist pattern, acid generator and compound TOKYO OHKA KOGYO CO., LTD. (JP) 2017-06-13 US disclosed
US-20130137048-A1 RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN TOKYO OHKA KOGYO CO., LTD. (JP) 2013-05-30 US disclosed
US-20130115554-A1 RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN AND POLYMERIC COMPOUND TOKYO OHKA KOGYO CO., LTD. (JP) 2013-05-09 US disclosed
US-20130095427-A1 RESIST COMPOSITION FOR EUV OR EB AND METHOD OF FORMING RESIST PATTERN TOKYO OHKA KOGYO CO., LTD. (JP) 2013-04-18 US disclosed
US-20130071789-A1 RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN TOKYO OHKA KOGYO CO., LTD. (JP) 2013-03-21 US disclosed
US-20130022911-A1 POLYMER, RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN TOKYO OHKA KOGYO CO., LTD. (JP) 2013-01-24 US disclosed
US-20120328982-A1 POSITIVE RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN TOKYO OHKA KOGYO CO., LTD. (JP) 2012-12-27 US disclosed
US-20120308931-A1 RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN TOKYO OHKA KOGYO CO., LTD. (JP) 2012-12-06 US disclosed
US-20120301829-A1 RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, NOVEL COMPOUND, AND ACID GENERATOR TOKYO OHKA KOGYO CO., LTD. (JP) 2012-11-29 US disclosed
US-20120214101-A1 RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN TOKYO OHKA KOGYO CO., LTD. (JP) 2012-08-23 US disclosed
US-20120148956-A1 RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN TOKYO OHKA KOGYO CO., LTD. (JP) 2012-06-14 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (3 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20130115554-A1 RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN AND POLYMERIC COMPOUND C1R, SLC11A2, C9 EPHX1 1854/4885EPHX2 664/4885ALDH1A1 1040/4885
US-20170176855-A1 RESIST COMPOSITION, METHOD FOR FORMING RESIST PATTERN, ACID GENERATOR AND COMPOUND RB1, FXR1, GAR1 EPHX1 3216/4885EPHX2 3708/4885ALDH1A1 900/4885
US-20120301829-A1 RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, NOVEL COMPOUND, AND ACID GENERATOR SCO2, ASIC1, NOX1 EPHX1 903/4885EPHX2 754/4885ALDH1A1 1048/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.