SCHEMBL9945786

SCHEMBL9945786

CCC1CCCC1OC(=O)C(C)(C)CC

nearest known ligand 0.37

Predicted protein targets (top 7)

geneUniProtsupporting neighboursconfidence
HMGCR P04035 3/20 0.37
FKBP1A P62942 5/20 0.32
ALDH1A1 P00352 3/20 0.32
MEN1 O00255 1/20 0.32
KMT2A Q03164 1/20 0.32
APOBEC3A P31941 1/20 0.31
APOBEC3G Q9HC16 1/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL17088137 0.97 HMGCR (0.40) HMGCRFKBP1AALDH1A1MEN1KMT2A
SCHEMBL14997741 0.95 HMGCR (0.39) HMGCRFKBP1AALDH1A1MEN1KMT2A
SCHEMBL15889341 0.86 HMGCR (0.39) HMGCRFKBP1AALDH1A1MEN1KMT2A
SCHEMBL15681469 0.83 HMGCR (0.41) HMGCRFKBP1AALDH1A1MEN1KMT2A
SCHEMBL26753658 0.82 HMGCR (0.33) HMGCRFKBP1AALDH1A1MEN1KMT2A
SCHEMBL16789537 0.81 ALDH1A1 (0.31) ALDH1A1
SCHEMBL132912 0.81 CYP19A1 (0.39) HMGCRFKBP1AALDH1A1MEN1KMT2A
SCHEMBL11953035 0.81 HMGCR (0.33) HMGCR
SCHEMBL14362098 0.81 HMGCR (0.34) HMGCR
SCHEMBL10187705 0.81 HMGCR (0.40) HMGCRFKBP1AALDH1A1MEN1KMT2A

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 18 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-10031419-B2 Pattern forming method, composition kit and resist film, manufacturing method of electronic device using these, and electronic device FUJIFILM CORPORATION (JP) 2018-07-24 US disclosed
US-9810981-B2 Pattern formation method, etching method, electronic device manufacturing method, and electronic device FUJIFILM CORPORATION (JP) 2017-11-07 US disclosed
US-20160342083-A1 PATTERN FORMATION METHOD, ETCHING METHOD, ELECTRONIC DEVICE MANUFACTURING METHOD, AND ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2016-11-24 US disclosed
US-9323150-B2 Actinic-ray- or radiation-sensitive resin composition, actinic-ray- or radiation-sensitive film therefrom and method of forming pattern FUJIFILM CORPORATION (JP) 2016-04-26 US disclosed
US-20160048075-A1 PATTERN FORMING METHOD, COMPOSITION KIT AND RESIST FILM, MANUFACTURING METHOD OF ELECTRONIC DEVICE USING THESE, AND ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2016-02-18 US disclosed
US-20160033862-A1 ACTIVE LIGHT-SENSITIVE, OR RADIATION-SENSITIVE RESIN COMPOSITION, AND PATTERN-FORMING METHOD USING SAME FUJIFILM CORPORATION (JP) 2016-02-04 US disclosed
US-20150277225-A1 ACTINIC-RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM FORMED USING SAID COMPOSITION, METHOD FOR FORMING PATTERN USING SAID COMPOSITION, PROCESS FOR PRODUCING ELECTRONIC DEVICE, AND ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2015-10-01 US disclosed
US-8999621-B2 Pattern forming method, chemical amplification resist composition and resist film FUJIFILM CORPORATION (JP) 2015-04-07 US disclosed
US-20140227636-A1 ACTINIC-RAY- OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTINIC-RAY- OR RADIATION-SENSITIVE FILM THEREFROM AND METHOD OF FORMING PATTERN FUJIFILM CORPORATION (JP) 2014-08-14 US disclosed
US-20140030643-A1 ACTINIC-RAY-OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTINIC-RAY- OR RADIATION-SENSITIVE RESIN FILM THEREFROM AND METHOD OF FORMING PATTERN USING THE COMPOSITION FUJIFILM CORPORATION (JP) 2014-01-30 US disclosed
US-20130236837-A1 METHOD FOR FORMING A RESIST PATTERN AND A METHOD FOR PROCESSING A SUBSTRATE UTILIZING THE METHOD FOR FORMING A RESIST PATTERN FUJIFILM CORPORATION (JP) 2013-09-12 US disclosed
US-20130130178-A1 ACTINIC-RAY-OR RADIATION-SENSITIVE RESIN COMPOSITION AND METHOD OF FORMING PATTERN THEREWITH FUJIFILM CORPORATION (JP) 2013-05-23 US disclosed
US-8252877-B2 Polymerizable compound and polymer compound obtained by using the same FUJIFILM CORPORATION (JP) 2012-08-28 US disclosed
US-20120148957-A1 PATTERN FORMING METHOD, CHEMICAL AMPLIFICATION RESIST COMPOSITION AND RESIST FILM FUJIFILM CORPORATION (JP) 2012-06-14 US disclosed
US-20100159392-A1 PATTERNING PROCESS AND RESIST COMPOSITION SHIN-ETSU CHEMICAL CO., LTD. (JP) 2010-06-24 US disclosed
US-20100152401-A1 POLYMERIZABLE COMPOUND AND POLYMER COMPOUND OBTAINED BY USING THE SAME FUJIFILM CORPORATION (JP) 2010-06-17 US disclosed
US-7666574-B2 Positive resist composition and pattern forming method FUJIFILM CORPORATION (JP) 2010-02-23 US disclosed
US-20080241746-A1 POSITIVE RESIST COMPOSITION AND PATTERN FORMING METHOD FUJIFILM CORPORATION (JP) 2008-10-02 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (2 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20100152401-A1 POLYMERIZABLE COMPOUND AND POLYMER COMPOUND OBTAINED BY USING THE SAME CA11, CNOT1, CA1 HMGCR 4664/4885FKBP1A 442/4885ALDH1A1 902/4885
US-20150277225-A1 ACTINIC-RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM FORMED USING SAID COMPOSITION, METHOD FOR FORMING PATTERN USING SAID COMPOSITION, PROCESS FOR PRODUCING ELECTRONIC DEVICE, AND ELECTRONIC DEVICE TERB1, ACTR5, ADPRS HMGCR 1271/4885FKBP1A 4737/4885ALDH1A1 2080/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.