SCHEMBL9965125

SCHEMBL9965125

CC(=O)OC1CC2CC1C1C3CC(C)C(C3)C21

nearest known ligand 0.40

Predicted protein targets (top 15)

geneUniProtsupporting neighboursconfidence
CHRM2 P08172 7/20 0.37
CHRM1 P11229 5/20 0.37
CYP2D6 P10635 2/20 0.37
MEN1 O00255 1/20 0.37
KMT2A Q03164 1/20 0.37
CHRM4 P08173 4/20 0.34
CHRM3 P20309 4/20 0.34
TSHR P16473 1/20 0.33
TDP1 Q9NUW8 1/20 0.31
CHRM5 P08912 2/20 0.31
CYP2C19 P33261 1/20 0.31
NPC1 O15118 1/20 0.31
RAB9A P51151 1/20 0.31
NPSR1 Q6W5P4 1/20 0.31
L3MBTL1 Q9Y468 1/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL3414722 1.00 CHRM2 (0.37) CHRM2CHRM1CYP2D6MEN1KMT2A
SCHEMBL10199946 1.00 CHRM2 (0.37) CHRM2CHRM1CYP2D6MEN1KMT2A
SCHEMBL23633756 0.85 GPX4 (0.32)
SCHEMBL12270976 0.84 CHRM2 (0.36) CHRM2CHRM1CYP2D6MEN1KMT2A
SCHEMBL23633736 0.82
SCHEMBL15147014 0.81 CHRM2 (0.41) CHRM2CHRM1CYP2D6MEN1KMT2A
SCHEMBL14355803 0.81 GPX4 (0.30)
SCHEMBL12430188 0.81 CHRM2 (0.34) CHRM2CHRM1CYP2D6MEN1KMT2A
SCHEMBL19829285 0.81 CHRM2 (0.38) CHRM2CHRM1CYP2D6MEN1KMT2A
SCHEMBL23633724 0.80

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 13 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-11009790-B2 Photoacid generator and photoresist composition including the same SAMSUNG ELECTRONICS CO., LTD. (KR) 2021-05-18 US disclosed
US-20180031967-A1 PHOTOACID GENERATOR AND PHOTORESIST COMPOSITION INCLUDING THE SAME SAMSUNG ELECTRONICS CO., LTD. (KR) 2018-02-01 US disclosed
US-20180031967-A1 PHOTOACID GENERATOR AND PHOTORESIST COMPOSITION INCLUDING THE SAME SAMSUNG ELECTRONICS CO., LTD. (KR) 2018-02-01 US disclosed
US-9086628-B2 Resist protective film-forming composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2015-07-21 US disclosed
US-8420292-B2 Polymer, resist composition, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2013-04-16 US disclosed
US-20130084517-A1 RESIST PROTECTIVE FILM-FORMING COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2013-04-04 US disclosed
US-20130034813-A1 CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION FOR ArF IMMERSION LITHOGRAPHY AND PATTERN FORMING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2013-02-07 US disclosed
US-8252504-B2 Polymer, resist composition, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-08-28 US disclosed
EP-2466379-A1 Resist composition and patterning process Shin-Etsu Chemical Co., Ltd. (JP) 2012-06-20 EP disclosed
US-20110177455-A1 POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2011-07-21 US disclosed
US-20090208873-A1 POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2009-08-20 US disclosed
US-7235341-B2 Positive resist composition FUJIFILM CORPORATION (JP) 2007-06-26 US disclosed
US-7214465-B2 Positive photosensitive composition FUJIFILM CORPORATION (JP) 2007-05-08 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (3 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20180031967-A1 PHOTOACID GENERATOR AND PHOTORESIST COMPOSITION INCLUDING THE SAME PAG1, CCNT1, NAT1 CHRM2 1121/4885CHRM1 339/4885CYP2D6 896/4885
US-20130034813-A1 CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION FOR ArF IMMERSION LITHOGRAPHY AND PATTERN FORMING PROCESS ARFIP2, ARF1, ARF4 CHRM2 4806/4885CHRM1 4844/4885CYP2D6 4581/4885
US-11009790-B2 Photoacid generator and photoresist composition including the same PAG1, CCNT1, NAT1 CHRM2 1121/4885CHRM1 339/4885CYP2D6 896/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.