SCHEMBL10027979

SCHEMBL10027979

CCOCOc1ccccc1NC(=O)C(C)CC(CC)C(=O)Nc1ccccc1O

nearest known ligand 0.57

Predicted protein targets (top 19)

geneUniProtsupporting neighboursconfidence
▸ KDM4E B2RXH2 2/20 0.57
▸ KMT2A Q03164 2/20 0.57
▸ L3MBTL1 Q9Y468 1/20 0.57
▸ GAA P10253 4/20 0.45
▸ MAPT P10636 2/20 0.45
▸ MAPK1 P28482 2/20 0.45
▸ ALDH1A1 P00352 3/20 0.44
▸ HPGD P15428 2/20 0.44
▸ TSHR P16473 1/20 0.41
▸ CA12 O43570 1/20 0.41
▸ CA1 P00915 1/20 0.41
▸ CA2 P00918 1/20 0.41
▸ CA9 Q16790 1/20 0.41
▸ LMNA P02545 3/20 0.40
▸ NPSR1 Q6W5P4 2/20 0.40
▸ UBE2N P61088 1/20 0.40
▸ MEN1 O00255 1/20 0.39
▸ MCL1 Q07820 1/20 0.39
▸ POLB P06746 1/20 0.39

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL10027955 0.84 KMT2A (0.80) KDM4EKMT2AL3MBTL1GAAALDH1A1
SCHEMBL10027980 0.80 KMT2A (0.50) KDM4EKMT2AL3MBTL1GAAMAPT
SCHEMBL12125205 0.79 KMT2A (0.55) KDM4EKMT2AL3MBTL1GAAMAPT
SCHEMBL10027981 0.77 KDM4E (0.36) KDM4EKMT2AL3MBTL1GAAMAPT
SCHEMBL20319938 0.76 TSHR (0.56) KDM4EKMT2AL3MBTL1GAAMAPT
SCHEMBL20332450 0.74 TSHR (0.70) KDM4EKMT2AL3MBTL1GAAMAPT
SCHEMBL31351354 0.74 KMT2A (1.00) KDM4EKMT2AL3MBTL1GAAMAPT
SCHEMBL14643391 0.73 KDM4E (0.63) KDM4EKMT2AL3MBTL1GAAMAPT
SCHEMBL10027975 0.73 KDM4E (0.63) KDM4EKMT2AL3MBTL1GAAMAPT
SCHEMBL10027968 0.73 KMT2A (0.77) KDM4EKMT2AL3MBTL1GAAALDH1A1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 1 patent. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20120021357-A1 POSITIVE-TYPE PHOTOSENSITIVE INSULATING RESIN COMPOSITION, AND PATTERN FORMING METHOD USING SAME NEC CORPORATION (JP) 2012-01-26 — — US disclosed
Send feedback