SCHEMBL1003378

SCHEMBL1003378

C[N+](C)(C)Cc1ccccc1.O=S(=O)([O-])C(F)(F)CO

nearest known ligand 0.50

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
ALDH1A1 P00352 2/20 0.50
KDM4E B2RXH2 1/20 0.50
TDP1 Q9NUW8 1/20 0.50
GPR3 P46089 1/20 0.35
HSD11B1 P28845 1/20 0.35
CES1 P23141 1/20 0.34
ALPL P05186 1/20 0.34
POLB P06746 1/20 0.34
ALPG P10696 1/20 0.34
TSHR P16473 2/20 0.33
MEN1 O00255 2/20 0.33
KMT2A Q03164 2/20 0.33
FAAH O00519 1/20 0.33
PRSS1 P07477 1/20 0.33
PRSS2 P07478 1/20 0.33
ELANE P08246 1/20 0.33
PRTN3 P24158 1/20 0.33
PRSS3 P35030 1/20 0.33
NR1I2 O75469 1/20 0.33
CHRNB2 P17787 1/20 0.33

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL1003379 0.86 ALDH1A1 (0.52) ALDH1A1KDM4ETDP1HSD11B1CES1
Trifluoromethanesulfonic Acid SCHEMBL1130292 0.85 KDM4E (0.59) ALDH1A1KDM4ETDP1GPR3FAAH
SCHEMBL31079505 0.82 ALDH1A1 (0.50) ALDH1A1KDM4ETDP1GPR3HSD11B1
SCHEMBL31079541 0.81 ALDH1A1 (0.49) ALDH1A1KDM4ETDP1GPR3HSD11B1
Sulfuric Acid SCHEMBL229801 0.80 KDM4E (0.65) ALDH1A1KDM4ETDP1CES1ALPL
Sulfuric Acid SCHEMBL229799 0.80 KDM4E (0.71) ALDH1A1KDM4ETDP1ALPLPOLB
SCHEMBL16195176 0.79 ALDH1A1 (0.44) ALDH1A1KDM4ETDP1GPR3MEN1
Trifluoromethanesulfonic Acid SCHEMBL1130294 0.79 ALDH1A1 (0.59) ALDH1A1KDM4ETDP1HSD11B1CES1
SCHEMBL1001524 0.79 KDM4E (0.41) ALDH1A1KDM4ETDP1HSD11B1TSHR
SCHEMBL2131788 0.78 ALDH1A1 (0.46) ALDH1A1KDM4ETDP1GPR3HSD11B1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 15 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-119330920-A Photoacid generator, resist composition and application thereof 湖北鼎龙控股股份有限公司 2025-01-21 CN disclosed
US-20240295814-A1 RESIST COMPOSITION, RESIST PATTERN FORMING METHOD, AND POLYMER TOKYO OHKA KOGYO CO., LTD. (JP) 2024-09-05 US disclosed
WO-2024176672-A1 RADIATION-SENSITIVE COMPOSITION AND PATTERN FORMING METHOD JSR株式会社 2024-08-29 WO disclosed
US-11953827-B2 Molecular resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2024-04-09 US disclosed
CN-111793054-B Sulfonium compound, chemically amplified resist composition, and pattern forming method 信越化学工业株式会社 2023-07-07 CN disclosed
US-11687000-B2 Sulfonium compound, chemically amplified resist composition, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-06-27 US disclosed
US-11560355-B2 Onium salt, chemically amplified resist composition, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-01-24 US disclosed
US-20200379345-A1 MOLECULAR RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2020-12-03 US disclosed
CN-111793054-A Sulfonium compound, chemically amplified resist composition, and pattern forming method 信越化学工业株式会社 2020-10-20 CN disclosed
US-20200319550-A1 SULFONIUM COMPOUND, CHEMICALLY AMPLIFIED RESIST COMPOSITION, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2020-10-08 US disclosed
US-20200223796-A1 ONIUM SALT, CHEMICALLY AMPLIFIED RESIST COMPOSITION, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2020-07-16 US disclosed
US-9164384-B2 Patterning process and resist composition SHIN-ETSU CHEMICAL CO., LTD. (JP) 2015-10-20 US disclosed
US-20140322650-A1 PATTERNING PROCESS AND RESIST COMPOSITION SHIN-ETSU CHEMICAL CO., LTD. (JP) 2014-10-30 US disclosed
US-8173354-B2 Sulfonium salt, resist composition, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-05-08 US disclosed
US-20110008735-A1 SULFONIUM SALT, RESIST COMPOSITION, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2011-01-13 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (5 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-11560355-B2 Onium salt, chemically amplified resist composition, and patterning process ARF5, EIF2B5, EIF2B3 ALDH1A1 3553/4885KDM4E 760/4885TDP1 3307/4885
US-20200223796-A1 ONIUM SALT, CHEMICALLY AMPLIFIED RESIST COMPOSITION, AND PATTERNING PROCESS ARF5, EIF2B5, EIF2B3 ALDH1A1 3553/4885KDM4E 760/4885TDP1 3307/4885
US-11687000-B2 Sulfonium compound, chemically amplified resist composition, and patterning process ETV6, PKD1, PKD2 ALDH1A1 3150/4885KDM4E 1025/4885TDP1 3997/4885
US-20110008735-A1 SULFONIUM SALT, RESIST COMPOSITION, AND PATTERNING PROCESS ETV6, ETV1, VPS4B ALDH1A1 4625/4885KDM4E 1943/4885TDP1 2411/4885
US-20200319550-A1 SULFONIUM COMPOUND, CHEMICALLY AMPLIFIED RESIST COMPOSITION, AND PATTERNING PROCESS ETV6, PKD1, PKD2 ALDH1A1 3150/4885KDM4E 1025/4885TDP1 3997/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.