Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | MAPT | P10636 | 2/20 | 0.39 |
| ▸ | SIRT2 | Q8IXJ6 | 1/20 | 0.39 |
| ▸ | KMT2A | Q03164 | 4/20 | 0.39 |
| ▸ | MEN1 | O00255 | 3/20 | 0.39 |
| ▸ | ATM | Q13315 | 1/20 | 0.38 |
| ▸ | AKR1C3 | P42330 | 1/20 | 0.38 |
| ▸ | TAS2R14 | Q9NYV8 | 3/20 | 0.37 |
| ▸ | CYP19A1 | P11511 | 1/20 | 0.37 |
| ▸ | PKM | P14618 | 2/20 | 0.37 |
| ▸ | EP300 | Q09472 | 1/20 | 0.36 |
| ▸ | KAT2A | Q92830 | 1/20 | 0.36 |
| ▸ | KAT2B | Q92831 | 1/20 | 0.36 |
| ▸ | TCF4 | P15884 | 1/20 | 0.36 |
| ▸ | CTNNB1 | P35222 | 1/20 | 0.36 |
| ▸ | SMPD1 | P17405 | 1/20 | 0.36 |
| ▸ | LMNA | P02545 | 2/20 | 0.36 |
| ▸ | SMN1; SMN2 | Q16637 | 2/20 | 0.36 |
| ▸ | L3MBTL1 | Q9Y468 | 2/20 | 0.36 |
| ▸ | HTT | P42858 | 1/20 | 0.36 |
| ▸ | TDP1 | Q9NUW8 | 1/20 | 0.36 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL15214878 | 0.92 | KMT2A (0.43) | KMT2AMEN1ATMCYP19A1PKM | |
| SCHEMBL12727038 | 0.90 | IDO1 (0.40) | MAPTSIRT2KMT2AMEN1ATM | |
| SCHEMBL29645031 | 0.86 | PKM (0.43) | MAPTSIRT2KMT2AMEN1ATM | |
| SCHEMBL5918261 | 0.82 | EP300 (0.45) | MAPTPKMEP300KAT2AKAT2B | |
| SCHEMBL5918260 | 0.82 | EP300 (0.45) | MAPTPKMEP300KAT2AKAT2B | |
| SCHEMBL11003138 | 0.82 | NPC1 (0.46) | MAPTKMT2AMEN1ATMPKM | |
| SCHEMBL11003125 | 0.82 | NPC1 (0.46) | MAPTKMT2AMEN1ATMPKM | |
| SCHEMBL10083960 | 0.80 | TCF4 (0.38) | MAPTKMT2AMEN1PKMTCF4 | |
| SCHEMBL7781708 | 0.80 | PDE4A (0.47) | MAPTKMT2AMEN1TAS2R14LMNA | |
| SCHEMBL7781706 | 0.80 | PDE4A (0.47) | MAPTKMT2AMEN1TAS2R14LMNA |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 55 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-8389197-B2 | Compound, positive resist composition and resist pattern forming method | TOKYO OHKA KOGYO CO., LTD. (JP) | 2013-03-05 | — | — | US | disclosed |
| US-8216764-B2 | acrylate ester resin having a tertiary alkyl ester-type acid dissociable, dissolution inhibiting group, and acid generator; reducing line width roughness (LWR) and suppressing development of footing which is likely to occur with a substrate having an inorganic antireflection film (inorganic BARC) | TOKYO OHKA KOGYO CO., LTD. (JP) | 2012-07-10 | — | — | US | disclosed |
| US-8206887-B2 | Positive resist composition and resist pattern forming method | TOKYO OHKA KOGYO CO., LTD. (JP) | 2012-06-26 | — | — | US | disclosed |
| US-8105747-B2 | Positive resist composition and method of forming resist pattern | TOKYO OHKA KOGYO CO., LTD. (JP) | 2012-01-31 | — | — | US | disclosed |
| US-8062825-B2 | Positive resist composition and resist pattern forming method | TOKYO OHKA KOGYO CO., LTD. (JP) | 2011-11-22 | — | — | US | disclosed |
| US-8021824-B2 | Polymer compound, resist composition and method of forming resist pattern | TOKYO OHKA KOGYO CO., LTD. (JP) | 2011-09-20 | — | — | US | disclosed |
| US-7981588-B2 | Negative resist composition and method of forming resist pattern | TOKYO OHKA KOGYO CO., LTD. (JP) | 2011-07-19 | — | — | US | disclosed |
| US-7972762-B2 | resist pattern with reduced defects and excellent lithographic characteristics; acrylate ester copolymer obtained by polymerizing an ( alpha -lower alkyl)acrylate ester having tertiary alkyl ester-type acid dissociable dissolution inhibiting group, under a presence of acid | TOKYO OHKA KOGYO CO., LTD. (JP) | 2011-07-05 | — | — | US | disclosed |
| US-7964331-B2 | Positive resist composition and method of forming resist pattern | TOKYO OHKA KOGYO CO., LTD. (JP) | 2011-06-21 | — | — | US | disclosed |
| US-7943284-B2 | Compound, dissolution inhibitor, positive type resist composition, and method of forming resist pattern | TOKYO OHKA KOGYO CO., LTD. (JP) | 2011-05-17 | — | — | US | disclosed |
| US-7504196-B2 | Positive resist composition, method for resist pattern formation and compound | TOKYO OHKA KOGYO CO., LTD. (JP) | 2009-03-17 | — | — | US | disclosed |
| US-20090068583-A1 | resin comprises (2-adamantyloxymethyl)methacrylate monomers which exhibit increased alkali solubility under action of acid, and acid generator such as diphenyliodonium trifluoromethanesulfonate; reduced line edge roughness, improved shape and depth of focus | TOKYO OHKA KOGYO CO., LTD. (JP) | 2009-03-12 | — | — | US | disclosed |
| US-20090068588-A1 | POSITIVE RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN | TOKYO OHKA KOGYO CO., LTD. (JP) | 2009-03-12 | — | — | US | disclosed |
| US-20090047600-A1 | high resolution pattern with reduced line edge roughness; increased alkali solubility under action of acid generator | TOKYO OHKA KOGYO CO., LTD. (JP) | 2009-02-19 | — | — | US | disclosed |
| US-20090042129-A1 | POSITIVE RESIST COMPOSITION AND METHOD FOR RESIST PATTERN FORMATION | TOKYO OHKA KOGYO CO., LTD. (JP) | 2009-02-12 | — | — | US | disclosed |
| US-20090035697-A1 | NEGATIVE RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN | TOKYO OHKAKOGYO CO.,LTD. (JP) | 2009-02-05 | — | — | US | disclosed |
| US-20090035691-A1 | POSITIVE RESIST COMPOSITION, METHOD FOR FORMING RESIST PATTERN AND COMPOUND | TOKYO OHKA KOGYO CO., LTD. (JP) | 2009-02-05 | — | — | US | disclosed |
| US-20090004598-A1 | Resist Composition And Method For Forming Resist Pattern | TOKYO OHKA KOGYO CO., LTD. (JP) | 2009-01-01 | — | — | US | disclosed |
| US-20080193871-A1 | Positive Resist Composition For Immersion Exposure and Method of Forming Resist Pattern | TOKYO OHKA KOGYO CO., LTD. (JP) | 2008-08-14 | — | — | US | disclosed |
| US-20080145784-A1 | Positive Resist Composition, Method For Resist Pattern Formation and Compound | TOKYO OHKA KOGYO CO., LTD. (JP) | 2008-06-19 | — | — | US | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (2 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-20090035691-A1 | POSITIVE RESIST COMPOSITION, METHOD FOR FORMING RESIST PATTERN AND COMPOUND | POLR1A, CA1, POLR2A | MAPT 3037/4885SIRT2 4450/4885KMT2A 2541/4885 |
| US-20080145784-A1 | Positive Resist Composition, Method For Resist Pattern Formation and Compound | POLR1A, POLR2A, POLR2B | MAPT 3002/4885SIRT2 4516/4885KMT2A 2152/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.