SCHEMBL10114775

SCHEMBL10114775

COCc1cc(-c2cc(CCO)c(O)c(CCO)c2)cc(COC)c1O

nearest known ligand 0.44

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
PRKCE Q02156 3/20 0.44
MYLK Q15746 2/20 0.44
ALDH1A1 P00352 2/20 0.44
TDP1 Q9NUW8 2/20 0.44
MEN1 O00255 1/20 0.44
PRKCG P05129 1/20 0.44
MAPT P10636 1/20 0.44
PRKCA P17252 1/20 0.44
APEX1 P27695 1/20 0.44
RECQL P46063 1/20 0.44
KMT2A Q03164 1/20 0.44
ALOX5 P09917 4/20 0.34
PTGS2 P35354 3/20 0.33
CA2 P00918 2/20 0.33
CA1 P00915 1/20 0.33
TNKS2 Q9H2K2 1/20 0.33
ERN1 O75460 1/20 0.32
HSD17B3 P37058 1/20 0.32
CYP2D6 P10635 1/20 0.32
HTR2C P28335 1/20 0.32

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL14997925 0.93 PRKCE (0.40) PRKCEMYLKALDH1A1TDP1MEN1
SCHEMBL26132797 0.88 PRKCE (0.54) PRKCEMYLKALDH1A1TDP1MEN1
SCHEMBL3063768 0.88 PRKCE (0.54) PRKCEMYLKALDH1A1TDP1MEN1
SCHEMBL19600596 0.87 PRKCE (0.43) PRKCEMYLKALDH1A1TDP1MEN1
SCHEMBL10114746 0.87 PRKCE (0.43) PRKCEMYLKALDH1A1TDP1MEN1
SCHEMBL24088853 0.86 PRKCE (0.52) PRKCEMYLKALDH1A1TDP1MEN1
SCHEMBL10450418 0.85 PRKCE (0.42) PRKCEMYLKALDH1A1TDP1MEN1
SCHEMBL16207219 0.85 SHBG (0.46) PRKCEMYLKALDH1A1TDP1MEN1
SCHEMBL19600590 0.85 PRKCE (0.42) PRKCEMYLKALDH1A1TDP1MEN1
SCHEMBL15686504 0.85 SHBG (0.46) PRKCEMYLKALDH1A1TDP1MEN1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 34 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-11815815-B2 Composition for forming silicon-containing resist underlayer film removable by wet process NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2023-11-14 US disclosed
US-20230350305-A1 MANUFACTURING METHOD FOR CURED SUBSTANCE, MANUFACTURING METHOD FOR LAMINATE, AND MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE, AND TREATMENT LIQUID FUJIFILM CORPORATION (JP) 2023-11-02 US disclosed
US-20230125270-A1 RADIATION SENSITIVE COMPOSITION NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2023-04-27 US disclosed
US-20180181000-A1 RADIATION SENSITIVE COMPOSITION NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2018-06-28 US disclosed
US-20180052391-A1 PHOTOSENSITIVE RESIN COMPOSITION, PHOTOSENSITIVE RESIN COMPOSITION FILM, CURED PRODUCT, INSULATING FILM AND MULTILAYER WIRING BOARD TORAY INDUSTRIES, INC. (JP) 2018-02-22 US disclosed
US-20180039174-A1 PHOTOSENSITIVE RESIN COMPOSITION TORAY INDUSTRIES, INC. (JP) 2018-02-08 US disclosed
US-20170371242-A1 COMPOSITION FOR FORMING SILICON-CONTAINING RESIST UNDERLAYER FILM REMOVABLE BY WET PROCESS NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2017-12-28 US disclosed
US-20170334837-A1 DIAMINE COMPOUND, AND HEAT-RESISTANT RESIN OR HEAT-RESISTANT RESIN PRECURSOR USING SAME TORAY INDUSTRIES, INC. (JP) 2017-11-23 US disclosed
US-20170327644-A1 RESIN AND PHOTOSENSITIVE RESIN COMPOSITION TORAY INDUSTRIES, INC. (JP) 2017-11-16 US disclosed
US-9746772-B2 Resist underlayer film forming composition for lithography containing polyether structure-containing resin NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2017-08-29 US disclosed
US-20140224765-A1 PATTERN FORMING METHOD JSR CORPORATION (JP) 2014-08-14 US disclosed
US-8722841-B2 Carbazole novolak resin NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2014-05-13 US disclosed
US-8674052-B2 Carbazole novolak resin NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2014-03-18 US disclosed
US-20130280913-A1 COMPOSITION FOR FORMING A RESIST UNDERLAYER FILM INCLUDING HYDROXYL GROUP-CONTAINING CARBAZOLE NOVOLAC RESIN NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2013-10-24 US disclosed
US-20130189533-A1 RESIST UNDERLAYER FILM FORMING COMPOSITION FOR LITHOGRAPHY CONTAINING POLYETHER STRUCTURE-CONTAINING RESIN NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2013-07-25 US disclosed
US-20130122710-A1 CARBAZOLE NOVOLAK RESIN NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2013-05-16 US disclosed
US-8389649-B2 Siloxane-based resin composition TORAY INDUSTRIES, INC. (JP) 2013-03-05 US disclosed
US-20120251949-A1 POSITIVE TYPE PHOTOSENSITIVE RESIN COMPOSITION TORAY INDUSTRIES, INC. (JP) 2012-10-04 US disclosed
US-20120181251-A1 PATTERN FORMING METHOD AND RESIST UNDERLAYER FILM-FORMING COMPOSITION JSR CORPORATION (JP) 2012-07-19 US disclosed
US-20120077345-A1 CARBAZOLE NOVOLAK RESIN NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2012-03-29 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (3 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20170334837-A1 DIAMINE COMPOUND, AND HEAT-RESISTANT RESIN OR HEAT-RESISTANT RESIN PRECURSOR USING SAME HEATR1, HSF1, RER1 PRKCE 3561/4885MYLK 4316/4885ALDH1A1 228/4885
US-20180181000-A1 RADIATION SENSITIVE COMPOSITION RER1, RAD1, RAD51 PRKCE 3408/4885MYLK 3497/4885ALDH1A1 1670/4885
US-20230125270-A1 RADIATION SENSITIVE COMPOSITION XRCC6, RAD50, XRCC5 PRKCE 2659/4885MYLK 3465/4885ALDH1A1 1388/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.