SCHEMBL6448541

SCHEMBL6448541

O=C1C2CC3CC1CC(C(=O)OC(C(F)(F)F)C(F)(F)S(=O)(=O)O)(C3)C2

nearest known ligand 0.35

Predicted protein targets (top 9)

geneUniProtsupporting neighboursconfidence
EPHX2 P34913 1/20 0.35
PRKCA P17252 1/20 0.34
CYP17A1 P05093 4/20 0.34
CYP19A1 P11511 4/20 0.34
TSHR P16473 1/20 0.33
NPSR1 Q6W5P4 1/20 0.33
GAA P10253 1/20 0.31
MAPT P10636 1/20 0.31
XBP1 P17861 1/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL18133301 1.00 EPHX2 (0.35) EPHX2PRKCACYP17A1CYP19A1TSHR
SCHEMBL23559488 1.00 EPHX2 (0.35) EPHX2PRKCACYP17A1CYP19A1TSHR
SCHEMBL22797667 0.92 EPHX2 (0.33) EPHX2PRKCACYP17A1CYP19A1TSHR
SCHEMBL2130379 0.91 CYP17A1 (0.32) PRKCACYP17A1CYP19A1TSHRNPSR1
SCHEMBL19042387 0.90 EPHX2 (0.33) EPHX2PRKCACYP17A1CYP19A1TSHR
SCHEMBL26190812 0.90 CYP17A1 (0.35) EPHX2PRKCACYP17A1CYP19A1TSHR
SCHEMBL26190682 0.88 CYP17A1 (0.34) EPHX2PRKCACYP17A1CYP19A1TSHR
SCHEMBL17578294 0.88 PRKCA (0.42) PRKCACYP17A1CYP19A1NPSR1GAA
SCHEMBL75500 0.88 PRKCA (0.42) PRKCACYP17A1CYP19A1NPSR1GAA
SCHEMBL14479483 0.88 PRKCA (0.42) PRKCACYP17A1CYP19A1NPSR1GAA

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 336 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-11914291-B2 Resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2024-02-27 US disclosed
US-20240027902-A1 CHEMICALLY AMPLIFIED RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2024-01-25 US disclosed
US-11835859-B2 Resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-12-05 US disclosed
US-20230384677-A1 ONIUM SALT COMPOUND, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-11-30 US disclosed
US-11829067-B2 Resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-11-28 US disclosed
US-20230375925-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE FILM, PATTERN FORMING METHOD, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, COMPOUND, AND RESIN FUJIFILM CORPORATION (JP) 2023-11-23 US disclosed
US-11822245-B2 Resist composition and pattern forming process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-11-21 US disclosed
US-20230367210-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE FILM, PATTERN FORMING METHOD, AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2023-11-16 US disclosed
US-20230359119-A1 RESIST COMPOSITION AND PATTERN FORMING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-11-09 US disclosed
US-20230350296-A1 CHEMICALLY AMPLIFIED RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-11-02 US disclosed
US-7541133-B2 Positive resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2009-06-02 US disclosed
US-7527912-B2 Photoacid generators, resist compositions, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2009-05-05 US disclosed
US-20090087786-A1 PATTERNING PROCESS AND RESIST COMPOSITION USED THEREIN SHIN-ETSU CHEMICAL CO., LTD. (JP) 2009-04-02 US disclosed
US-20090061358-A1 NOVEL PHOTOACID GENERATOR, RESIST COMPOSITION, AND PATTERNING PROCESS PROXIMAL SYSTEMS CORPORATION 2009-03-05 US disclosed
US-20090053651-A1 PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2009-02-26 US disclosed
US-20080268370-A1 Positive resist compositions and patterning process SHIN-ETSU CHEMICAL CO., LTD. 2008-10-30 US disclosed
US-20080254386-A1 Positive resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. 2008-10-16 US disclosed
US-20080153030-A1 Positive resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2008-06-26 US disclosed
US-20080124652-A1 Positive resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. 2008-05-29 US disclosed
US-20080085469-A1 Novel photoacid generators, resist compositions, and patterning process SHIN-ETSU CHEMICAL CO., LTD. 2008-04-10 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (3 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20090061358-A1 NOVEL PHOTOACID GENERATOR, RESIST COMPOSITION, AND PATTERNING PROCESS RER1, CRY1, CYP21A2 EPHX2 505/4885PRKCA 2049/4885CYP17A1 41/4885
US-20230384677-A1 ONIUM SALT COMPOUND, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS INSR, INSRR, SLC6A5 EPHX2 4225/4885PRKCA 3179/4885CYP17A1 4039/4885
US-20080085469-A1 Novel photoacid generators, resist compositions, and patterning process RER1, SCO2, ASIC3 EPHX2 345/4885PRKCA 2372/4885CYP17A1 3054/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.