SCHEMBL10135332

SCHEMBL10135332

CCC(C)(C)C(=O)OC12CC3CC(C1)CC(C(=O)OCC(F)(F)S(=O)(=O)O)(C3)C2

nearest known ligand 0.36

Predicted protein targets (top 6)

geneUniProtsupporting neighboursconfidence
NPSR1 Q6W5P4 1/20 0.36
MEN1 O00255 1/20 0.32
KMT2A Q03164 1/20 0.32
L3MBTL1 Q9Y468 1/20 0.32
LMNA P02545 1/20 0.31
ALDH1A1 P00352 1/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL18785950 0.90 NPSR1 (0.38) NPSR1MEN1KMT2AL3MBTL1LMNA
SCHEMBL25454659 0.88 NPSR1 (0.39) NPSR1MEN1KMT2AL3MBTL1LMNA
SCHEMBL12014320 0.88 NPSR1 (0.39) NPSR1MEN1KMT2AL3MBTL1LMNA
SCHEMBL18898568 0.86 NPSR1 (0.40) NPSR1MEN1KMT2AL3MBTL1LMNA
SCHEMBL18785335 0.86 NPSR1 (0.39) NPSR1MEN1KMT2AL3MBTL1LMNA
SCHEMBL26063484 0.85 NPSR1 (0.37) NPSR1MEN1KMT2AL3MBTL1LMNA
SCHEMBL18649680 0.84 NPSR1 (0.36) NPSR1MEN1KMT2AL3MBTL1LMNA
SCHEMBL786552 0.84 NPSR1 (0.39) NPSR1MEN1KMT2AL3MBTL1LMNA
SCHEMBL786286 0.83 NPSR1 (0.40) NPSR1MEN1KMT2AL3MBTL1LMNA
SCHEMBL12352816 0.83 NPSR1 (0.36) NPSR1MEN1KMT2AL3MBTL1LMNA

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 17 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20230324798-A1 RESIST COMPOSITION AND PATTERN FORMING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-10-12 US disclosed
US-20230305392-A1 SALT, ACID GENERATOR, RESIN, RESIST COMPOSITION AND METHOD FOR PRODUCING RESIST PATTERN SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2023-09-28 US disclosed
US-20230161243-A1 SALT, ACID GENERATOR, RESIN, RESIST COMPOSITION AND METHOD FOR PRODUCING RESIST PATTERN SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2023-05-25 US disclosed
US-9182670-B2 Chemically amplified negative resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2015-11-10 US disclosed
US-9182670-B2 Chemically amplified negative resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2015-11-10 US disclosed
US-8957160-B2 Preparation of polymer, resulting polymer, resist composition, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2015-02-17 US disclosed
US-8957160-B2 Preparation of polymer, resulting polymer, resist composition, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2015-02-17 US disclosed
US-20140329183-A1 CHEMICALLY AMPLIFIED NEGATIVE RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2014-11-06 US disclosed
US-8815491-B2 Chemically amplified negative resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2014-08-26 US disclosed
US-20130224660-A1 PREPARATION OF POLYMER, RESULTING POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2013-08-29 US disclosed
US-20130224659-A1 POLYMER, MAKING METHOD, RESIST COMPOSITION, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2013-08-29 US disclosed
US-20130224659-A1 POLYMER, MAKING METHOD, RESIST COMPOSITION, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2013-08-29 US disclosed
US-20130224660-A1 PREPARATION OF POLYMER, RESULTING POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2013-08-29 US disclosed
US-8288076-B2 Chemically amplified resist composition and pattern forming process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-10-16 US disclosed
US-8105748-B2 Polymerizable anion-containing sulfonium salt and polymer, resist composition, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-01-31 US disclosed
US-20100304302-A1 CHEMICALLY AMPLIFIED RESIST COMPOSITION AND PATTERN FORMING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2010-12-02 US disclosed
US-20100099042-A1 POLYMERIZABLE ANION-CONTAINING SULFONIUM SALT AND POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2010-04-22 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (2 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20100099042-A1 POLYMERIZABLE ANION-CONTAINING SULFONIUM SALT AND POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS ARSA, ACSL3, ASH2L NPSR1 720/4885MEN1 2392/4885KMT2A 1543/4885
US-20230161243-A1 SALT, ACID GENERATOR, RESIN, RESIST COMPOSITION AND METHOD FOR PRODUCING RESIST PATTERN RER1, ASIC1, REN NPSR1 707/4885MEN1 1918/4885KMT2A 1882/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.