SCHEMBL10138459

SCHEMBL10138459

CCC(C)c1ccc(OC(C)OC2CCCCC2)c(C(=O)OC)c1

nearest known ligand 0.40

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
HIF1A Q16665 1/20 0.40
NPSR1 Q6W5P4 1/20 0.37
PDE4B Q07343 2/20 0.36
KMT2A Q03164 1/20 0.36
TRPM8 Q7Z2W7 1/20 0.36
BCHE P06276 1/20 0.35
ACHE P22303 1/20 0.35
L3MBTL1 Q9Y468 1/20 0.35
PDE5A O76074 1/20 0.35
ALDH1A1 P00352 2/20 0.35
TSHR P16473 2/20 0.35
KDM4E B2RXH2 1/20 0.35
MAPT P10636 1/20 0.35
HSD17B10 Q99714 1/20 0.35
LMNA P02545 1/20 0.35
HTT P42858 1/20 0.35
SMN1; SMN2 Q16637 1/20 0.35
PDE4A P27815 1/20 0.35
PDE4C Q08493 1/20 0.35
PDE4D Q08499 1/20 0.35

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL10138462 0.90 NPSR1 (0.36) HIF1ANPSR1KMT2AL3MBTL1ALDH1A1
SCHEMBL10138464 0.84 KDM4E (0.36) HIF1ANPSR1PDE4BKMT2AL3MBTL1
SCHEMBL10088188 0.83 ALDH1A1 (0.39) HIF1ANPSR1KMT2AL3MBTL1ALDH1A1
SCHEMBL12054784 0.83 PDE4B (0.43) HIF1APDE4BTRPM8ALDH1A1MAPT
SCHEMBL12056832 0.82 PDE4B (0.37) HIF1ANPSR1PDE4BKMT2ATRPM8
SCHEMBL10138857 0.80 NPC1 (0.39) HIF1ANPSR1KMT2AACHEL3MBTL1
SCHEMBL17147967 0.80 PPARA (0.36) HIF1APDE4BKMT2ATRPM8BCHE
SCHEMBL10138465 0.80 PPARG (0.40) HIF1AL3MBTL1
SCHEMBL10148496 0.78 MCHR1 (0.39) HIF1AKMT2AL3MBTL1ALDH1A1TSHR
SCHEMBL10149081 0.77 PPARG (0.40) L3MBTL1ALDH1A1MAPTSMN1; SMN2

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 2 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8092978-B2 Positive resist composition for electron beam, X-ray or EUV and pattern forming method using the same FUJIFILM CORPORATION (JP) 2012-01-10 US disclosed
US-20090246685-A1 POSITIVE RESIST COMPOSITION FOR ELECTRON BEAM, X-RAY OR EUV AND PATTERN FORMING METHOD USING THE SAME FUJIFILM CORPORATION (JP) 2009-10-01 US disclosed