SCHEMBL10138464

SCHEMBL10138464

CCC(C)c1ccc(OC(C)OCC2CCCC2)c(C(=O)OC)c1

nearest known ligand 0.38

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
KDM4E B2RXH2 2/20 0.36
ALDH1A1 P00352 2/20 0.36
HSD17B10 Q99714 2/20 0.36
MAPT P10636 1/20 0.36
TSHR P16473 1/20 0.36
NPSR1 Q6W5P4 1/20 0.36
MEN1 O00255 1/20 0.36
KMT2A Q03164 1/20 0.36
FFAR1 O14842 1/20 0.35
PDE4B Q07343 2/20 0.35
PDE4A P27815 1/20 0.35
PDE4C Q08493 1/20 0.35
PDE4D Q08499 1/20 0.35
KEAP1 Q14145 2/20 0.35
NFE2L2 Q16236 2/20 0.35
PARP15 Q460N3 1/20 0.34
PARP10 Q53GL7 1/20 0.34
NPC1 O15118 1/20 0.34
HSP90AA1 P07900 1/20 0.34
RAB9A P51151 1/20 0.34

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL10088188 0.89 ALDH1A1 (0.39) KDM4EALDH1A1HSD17B10MAPTTSHR
SCHEMBL10138477 0.87 RORC (0.39) NPSR1PDE4BPDE4APDE4CPDE4D
SCHEMBL18903275 0.85 KDM4E (0.35) KDM4EALDH1A1HSD17B10MAPTTSHR
SCHEMBL10138857 0.84 NPC1 (0.39) KDM4EALDH1A1HSD17B10MAPTTSHR
SCHEMBL10138459 0.84 HIF1A (0.40) KDM4EALDH1A1HSD17B10MAPTTSHR
SCHEMBL10138465 0.81 PPARG (0.40) NPC1HSP90AA1RAB9AL3MBTL1HIF1A
SCHEMBL10148496 0.79 MCHR1 (0.39) ALDH1A1MAPTTSHRMEN1KMT2A
SCHEMBL10138462 0.79 NPSR1 (0.36) KDM4EALDH1A1HSD17B10MAPTTSHR
SCHEMBL10149081 0.79 PPARG (0.40) ALDH1A1MAPTNPC1HSP90AA1RAB9A
SCHEMBL12056817 0.78 CA1 (0.44) KDM4EALDH1A1MAPTNPSR1MEN1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8092978-B2 Positive resist composition for electron beam, X-ray or EUV and pattern forming method using the same FUJIFILM CORPORATION (JP) 2012-01-10 US disclosed
US-8084183-B2 Resist composition for electron beam, X-ray, or EUV, and pattern-forming method using the same FUJIFILM CORPORATION (JP) 2011-12-27 US disclosed
US-20090246685-A1 POSITIVE RESIST COMPOSITION FOR ELECTRON BEAM, X-RAY OR EUV AND PATTERN FORMING METHOD USING THE SAME FUJIFILM CORPORATION (JP) 2009-10-01 US disclosed
US-20090047598-A1 RESIST COMPOSITION FOR ELECTRON BEAM, X-RAY, OR EUV, AND PATTERN-FORMING METHOD USING THE SAME FUJIFILM CORPORATION (JP) 2009-02-19 US disclosed