Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | NPC1 | O15118 | 1/20 | 0.39 |
| ▸ | HSP90AA1 | P07900 | 1/20 | 0.39 |
| ▸ | RAB9A | P51151 | 1/20 | 0.39 |
| ▸ | L3MBTL1 | Q9Y468 | 1/20 | 0.39 |
| ▸ | ALDH1A1 | P00352 | 6/20 | 0.38 |
| ▸ | LMNA | P02545 | 3/20 | 0.38 |
| ▸ | TP53 | P04637 | 1/20 | 0.38 |
| ▸ | MAPT | P10636 | 1/20 | 0.38 |
| ▸ | ALOX12 | P18054 | 1/20 | 0.38 |
| ▸ | HTT | P42858 | 1/20 | 0.37 |
| ▸ | KDM4E | B2RXH2 | 3/20 | 0.36 |
| ▸ | SMN1; SMN2 | Q16637 | 1/20 | 0.36 |
| ▸ | HIF1A | Q16665 | 1/20 | 0.36 |
| ▸ | TSHR | P16473 | 2/20 | 0.36 |
| ▸ | USP2 | O75604 | 1/20 | 0.35 |
| ▸ | GAA | P10253 | 1/20 | 0.35 |
| ▸ | PKM | P14618 | 1/20 | 0.35 |
| ▸ | HPGD | P15428 | 1/20 | 0.35 |
| ▸ | ALOX15 | P16050 | 1/20 | 0.35 |
| ▸ | HSD17B10 | Q99714 | 1/20 | 0.35 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL13898764 | 0.87 | TSHR (0.39) | ALDH1A1LMNATP53MAPTALOX12 | |
| SCHEMBL12056817 | 0.86 | CA1 (0.44) | NPC1HSP90AA1RAB9AL3MBTL1ALDH1A1 | |
| SCHEMBL10183520 | 0.85 | HDAC4 (0.37) | NPC1RAB9AALDH1A1LMNATP53 | |
| SCHEMBL12054789 | 0.84 | NPSR1 (0.39) | NPC1HSP90AA1RAB9AL3MBTL1ALDH1A1 | |
| SCHEMBL10138464 | 0.84 | KDM4E (0.36) | NPC1HSP90AA1RAB9AL3MBTL1ALDH1A1 | |
| SCHEMBL14086705 | 0.83 | RAB9A (0.43) | NPC1HSP90AA1RAB9AL3MBTL1ALDH1A1 | |
| SCHEMBL10138480 | 0.82 | ALDH1A1 (0.41) | NPC1HSP90AA1RAB9AL3MBTL1ALDH1A1 | |
| SCHEMBL10138462 | 0.82 | NPSR1 (0.36) | NPC1HSP90AA1RAB9AL3MBTL1ALDH1A1 | |
| SCHEMBL10088188 | 0.81 | ALDH1A1 (0.39) | L3MBTL1ALDH1A1MAPTKDM4EHIF1A | |
| SCHEMBL13920797 | 0.81 | NR3C1 (0.36) | NPC1HSP90AA1RAB9AL3MBTL1ALDH1A1 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 13 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-8906253-B2 | Gap embedding composition, method of embedding gap and method of producing semiconductor device by using the composition | FUJIFILM CORPORATION (JP) | 2014-12-09 | — | — | US | disclosed |
| US-20140322914-A1 | GAP EMBEDDING COMPOSITION, METHOD OF EMBEDDING GAP AND METHOD OF PRODUCING SEMICONDUCTOR DEVICE BY USING THE COMPOSITION | FUJIFILM CORPORATION (JP) | 2014-10-30 | — | — | US | disclosed |
| US-20130273741-A1 | GAP EMBEDDING COMPOSITION, METHOD OF EMBEDDING GAP AND METHOD OF PRODUCING SEMICONDUCTOR DEVICE BY USING THE COMPOSITION | FUJIFILM CORPORATION (JP) | 2013-10-17 | — | — | US | disclosed |
| US-8426103-B2 | Positive resist composition for use with electron beam, X-ray or EUV and pattern forming method using the same | FUJIFILM CORPORATION (JP) | 2013-04-23 | — | — | US | disclosed |
| US-8110333-B2 | Resist composition containing novel sulfonium compound, pattern-forming method using the resist composition, and novel sulfonium compound | FUJIFILM CORPORATION (JP) | 2012-02-07 | — | — | US | disclosed |
| US-8092978-B2 | Positive resist composition for electron beam, X-ray or EUV and pattern forming method using the same | FUJIFILM CORPORATION (JP) | 2012-01-10 | — | — | US | disclosed |
| US-8017299-B2 | Positive resist composition and pattern forming method using the same | FUJIFILM CORPORATION (JP) | 2011-09-13 | — | — | US | disclosed |
| US-7858289-B2 | Positive resist composition for electron beam, X-ray or EUV and pattern forming method using the same | FUJIFILM CORPORATION (JP) | 2010-12-28 | — | — | US | disclosed |
| US-20090246685-A1 | POSITIVE RESIST COMPOSITION FOR ELECTRON BEAM, X-RAY OR EUV AND PATTERN FORMING METHOD USING THE SAME | FUJIFILM CORPORATION (JP) | 2009-10-01 | — | — | US | disclosed |
| US-20090202946-A1 | POSITIVE RESIST COMPOSITION FOR USE WITH ELECTRON BEAM, X-RAY OR EUV AND PATTERN FORMING METHOD USING THE SAME | FUJIFILM CORPORATION (JP) | 2009-08-13 | — | — | US | disclosed |
| US-20090111047-A1 | POSITIVE RESIST COMPOSITION FOR ELECTRON BEAM, X-RAY OR EUV AND PATTERN FORMING METHOD USING THE SAME | FUJIFILM CORPORATION (JP) | 2009-04-30 | — | — | US | disclosed |
| US-20090111053-A1 | POSITIVE RESIST COMPOSITION AND PATTERN FORMING METHOD USING THE SAME | FUJIFILM CORPORATION (JP) | 2009-04-30 | — | — | US | disclosed |
| US-20090042124-A1 | RESIST COMPOSITION CONTAINING NOVEL SULFONIUM COMPOUND, PATTERN-FORMING METHOD USING THE RESIST COMPOSITION, AND NOVEL SULFONIUM COMPOUND | FUJIFILM CORPORATION (JP) | 2009-02-12 | — | — | US | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (1 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-20090042124-A1 | RESIST COMPOSITION CONTAINING NOVEL SULFONIUM COMPOUND, PATTERN-FORMING METHOD USING THE RESIST COMPOSITION, AND NOVEL SULFONIUM COMPOUND | ADH5, SRRM2, ADH1A | NPC1 4499/4885HSP90AA1 1898/4885RAB9A 1743/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.