SCHEMBL10138462

SCHEMBL10138462

CCC(C)c1ccc(OC(C)OC2CCC(C)CC2)c(C(=O)OC)c1

nearest known ligand 0.36

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
NPSR1 Q6W5P4 1/20 0.36
NPC1 O15118 1/20 0.34
HSP90AA1 P07900 1/20 0.34
RAB9A P51151 1/20 0.34
L3MBTL1 Q9Y468 1/20 0.34
ALDH1A1 P00352 6/20 0.33
ADRB2 P07550 2/20 0.33
ADRB1 P08588 2/20 0.33
ADRB3 P13945 2/20 0.33
ADRA1D P25100 2/20 0.33
ADRA1A P35348 2/20 0.33
ADRA1B P35368 2/20 0.33
HPGD P15428 1/20 0.33
TSHR P16473 1/20 0.33
HSD17B10 Q99714 1/20 0.33
KDM4E B2RXH2 1/20 0.33
LMNA P02545 1/20 0.33
TP53 P04637 1/20 0.33
MAPT P10636 1/20 0.33
ALOX12 P18054 1/20 0.33

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL10138459 0.90 HIF1A (0.40) NPSR1L3MBTL1ALDH1A1TSHRHSD17B10
SCHEMBL10138857 0.82 NPC1 (0.39) NPSR1NPC1HSP90AA1RAB9AL3MBTL1
SCHEMBL10138464 0.79 KDM4E (0.36) NPSR1NPC1HSP90AA1RAB9AL3MBTL1
SCHEMBL10088188 0.76 ALDH1A1 (0.39) NPSR1L3MBTL1ALDH1A1TSHRHSD17B10
SCHEMBL10138477 0.75 RORC (0.39) NPSR1NPC1HSP90AA1RAB9AL3MBTL1
SCHEMBL13154155 0.74 KMT2A (0.39) NPSR1NPC1RAB9AALDH1A1HPGD
SCHEMBL12056817 0.74 CA1 (0.44) NPSR1NPC1HSP90AA1RAB9AL3MBTL1
SCHEMBL10138465 0.73 PPARG (0.40) NPC1HSP90AA1RAB9AL3MBTL1HIF1A
SCHEMBL12056832 0.73 PDE4B (0.37) NPSR1L3MBTL1LMNAKMT2AHTT
SCHEMBL12054784 0.72 PDE4B (0.43) ALDH1A1HSD17B10LMNATP53MAPT

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 2 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8092978-B2 Positive resist composition for electron beam, X-ray or EUV and pattern forming method using the same FUJIFILM CORPORATION (JP) 2012-01-10 US disclosed
US-20090246685-A1 POSITIVE RESIST COMPOSITION FOR ELECTRON BEAM, X-RAY OR EUV AND PATTERN FORMING METHOD USING THE SAME FUJIFILM CORPORATION (JP) 2009-10-01 US disclosed