SCHEMBL10138465

SCHEMBL10138465

CCC(C)c1ccc(OC(C)OCc2ccc(C3CCCCC3)cc2)c(C(=O)OC)c1

nearest known ligand 0.40

Predicted protein targets (top 16)

geneUniProtsupporting neighboursconfidence
PPARG P37231 1/20 0.40
PPARD Q03181 1/20 0.40
PPARA Q07869 1/20 0.40
MCHR1 Q99705 2/20 0.37
NPC1 O15118 1/20 0.36
HSP90AA1 P07900 1/20 0.36
RAB9A P51151 1/20 0.36
L3MBTL1 Q9Y468 1/20 0.36
NAAA Q02083 3/20 0.36
ASAH1 Q13510 1/20 0.36
CYP3A4 P08684 1/20 0.35
RORC P51449 1/20 0.35
CARM1 Q86X55 1/20 0.34
PRMT6 Q96LA8 1/20 0.34
APP P05067 1/20 0.34
HIF1A Q16665 1/20 0.34

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL10149081 0.89 PPARG (0.40) PPARGPPARDPPARAMCHR1NPC1
SCHEMBL10148496 0.86 MCHR1 (0.39) PPARGPPARDPPARAMCHR1NPC1
SCHEMBL12056817 0.83 CA1 (0.44) NPC1HSP90AA1RAB9AL3MBTL1HIF1A
SCHEMBL10138464 0.81 KDM4E (0.36) NPC1HSP90AA1RAB9AL3MBTL1HIF1A
SCHEMBL10088188 0.81 ALDH1A1 (0.39) PPARGL3MBTL1HIF1A
SCHEMBL10138459 0.80 HIF1A (0.40) L3MBTL1HIF1A
SCHEMBL10138857 0.78 NPC1 (0.39) NPC1HSP90AA1RAB9AL3MBTL1HIF1A
SCHEMBL12056820 0.78 HRH3 (0.38) NPC1HSP90AA1RAB9AL3MBTL1NAAA
SCHEMBL10138480 0.74 ALDH1A1 (0.41) NPC1HSP90AA1RAB9AL3MBTL1CYP3A4
SCHEMBL10138477 0.74 RORC (0.39) NPC1HSP90AA1RAB9AL3MBTL1RORC

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8092978-B2 Positive resist composition for electron beam, X-ray or EUV and pattern forming method using the same FUJIFILM CORPORATION (JP) 2012-01-10 US disclosed
US-8084183-B2 Resist composition for electron beam, X-ray, or EUV, and pattern-forming method using the same FUJIFILM CORPORATION (JP) 2011-12-27 US disclosed
US-20090246685-A1 POSITIVE RESIST COMPOSITION FOR ELECTRON BEAM, X-RAY OR EUV AND PATTERN FORMING METHOD USING THE SAME FUJIFILM CORPORATION (JP) 2009-10-01 US disclosed
US-20090047598-A1 RESIST COMPOSITION FOR ELECTRON BEAM, X-RAY, OR EUV, AND PATTERN-FORMING METHOD USING THE SAME FUJIFILM CORPORATION (JP) 2009-02-19 US disclosed