SCHEMBL10149078

SCHEMBL10149078

CCC(C)c1ccc(OC(C)OCCCc2c(-c3ccccc3)cccc2-c2ccccc2)c(C(=O)OC)c1

nearest known ligand 0.35

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
MAPT P10636 4/20 0.35
HSP90AA1 P07900 2/20 0.35
HTT P42858 2/20 0.35
NPSR1 Q6W5P4 1/20 0.35
KDM4E B2RXH2 3/20 0.34
PKM P14618 1/20 0.34
CD274 Q9NZQ7 6/20 0.34
PDCD1 Q15116 4/20 0.34
MCL1 Q07820 1/20 0.34
PPARA Q07869 2/20 0.34
PPARG P37231 1/20 0.34
PPARD Q03181 1/20 0.34
ALDH1A1 P00352 4/20 0.33
TDP1 Q9NUW8 3/20 0.33
HPGD P15428 2/20 0.33
CYP2C9 P11712 2/20 0.33
MEN1 O00255 1/20 0.33
RECQL P46063 1/20 0.33
KMT2A Q03164 1/20 0.33
GAA P10253 1/20 0.33

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL10148533 0.86 KDM4E (0.37) MAPTHSP90AA1HTTNPSR1KDM4E
SCHEMBL12054789 0.83 NPSR1 (0.39) MAPTHSP90AA1NPSR1KDM4EPKM
SCHEMBL14086705 0.80 RAB9A (0.43) MAPTHSP90AA1NPSR1KDM4EPPARA
SCHEMBL10148573 0.79 NPC1 (0.36) MAPTHSP90AA1KDM4EALDH1A1MEN1
SCHEMBL12056817 0.78 CA1 (0.44) MAPTHSP90AA1HTTNPSR1KDM4E
SCHEMBL13920797 0.78 NR3C1 (0.36) MAPTHSP90AA1HTTNPSR1KDM4E
SCHEMBL10138857 0.78 NPC1 (0.39) MAPTHSP90AA1HTTNPSR1KDM4E
SCHEMBL10149081 0.74 PPARG (0.40) MAPTHSP90AA1MCL1PPARAPPARG
SCHEMBL10088188 0.72 ALDH1A1 (0.39) MAPTNPSR1KDM4EPPARGALDH1A1
SCHEMBL10204885 0.72 ALDH1A1 (0.45) MAPTHSP90AA1HTTNPSR1KDM4E

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8092976-B2 High resolution, reduced pattern falling, and good sensitivity and good dissolution contrast achieved even in EUV (extreme ultra violet) exposure, reduction in the line edge roughness FUJIFILM CORPORATION (JP) 2012-01-10 US disclosed
US-7718344-B2 microlithography; ultrafine processing of semiconductor using electron beam, X-ray or deep UV; high sensitivity, high resolution and good line edge roughness; suppression of vaporized outgas; a polystyrene with an acid-decomposable group; 10-tolyl-9-oxothioxanthenium nonafluorobutanesulfonate FUJIFILM CORPORATION (JP) 2010-05-18 US disclosed
US-20080085468-A1 microlithography; ultrafine processing of semiconductor using electron beam, X-ray or deep UV; high sensitivity, high resolution and good line edge roughness; suppression of vaporized outgas; a polystyrene with an acid-decomposable group; 10-tolyl-9-oxothioxanthenium nonafluorobutanesulfonate FUJIFILM CORPORATION (JP) 2008-04-10 US disclosed
US-20080081282-A1 RESIST COMPOSITION AND PATTERN FORMING METHOD USING THE SAME FUJIFILM CORPORATION (JP) 2008-04-03 US disclosed