SCHEMBL10148558

SCHEMBL10148558

CCOc1cc(C(C)CC)ccc1OC(C)OCCOc1cc(OC)cc(OC)c1

nearest known ligand 0.39

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
NPSR1 Q6W5P4 1/20 0.39
CALM1 P0DP23 1/20 0.38
ABL1 P00519 1/20 0.36
ABCB1 P08183 1/20 0.36
BCR P11274 1/20 0.36
PDE4A P27815 2/20 0.35
PDE4B Q07343 2/20 0.35
PDE4C Q08493 2/20 0.35
PDE4D Q08499 2/20 0.35
ESR1 P03372 2/20 0.35
AHR P35869 2/20 0.35
MEN1 O00255 2/20 0.34
KMT2A Q03164 2/20 0.34
TDP1 Q9NUW8 1/20 0.34
ALDH1A1 P00352 4/20 0.34
HIF1A Q16665 1/20 0.34
MAPT P10636 2/20 0.34
GAA P10253 1/20 0.34
LMNA P02545 1/20 0.34
TP53 P04637 1/20 0.34

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL10148563 0.93 NPSR1 (0.40) NPSR1CALM1AHRTDP1ALDH1A1
SCHEMBL10148540 0.84 ALDH1A1 (0.43) NPSR1ESR1AHRMEN1KMT2A
SCHEMBL11999038 0.82 ABCB11 (0.47) AHRTDP1CYP1A2L3MBTL1
SCHEMBL10148354 0.82 NPSR1 (0.44) NPSR1TDP1ALDH1A1MAPTLMNA
SCHEMBL10148494 0.79 LMNA (0.39) MEN1KMT2ATDP1ALDH1A1GAA
SCHEMBL13588091 0.78 ALDH1A1 (0.37) MEN1KMT2ATDP1ALDH1A1HIF1A
SCHEMBL10138467 0.77 ALDH1A1 (0.45) ALDH1A1HIF1AMAPTGAALMNA
SCHEMBL10148506 0.77 PDE4B (0.35) NPSR1PDE4APDE4BPDE4CPDE4D
SCHEMBL2740735 0.76 ALDH1A1 (0.47) NPSR1KMT2AALDH1A1HIF1AMAPT
SCHEMBL20459373 0.76 ALDH1A1 (0.51) PDE4APDE4BPDE4CPDE4DALDH1A1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8092976-B2 High resolution, reduced pattern falling, and good sensitivity and good dissolution contrast achieved even in EUV (extreme ultra violet) exposure, reduction in the line edge roughness FUJIFILM CORPORATION (JP) 2012-01-10 US disclosed
US-7718344-B2 microlithography; ultrafine processing of semiconductor using electron beam, X-ray or deep UV; high sensitivity, high resolution and good line edge roughness; suppression of vaporized outgas; a polystyrene with an acid-decomposable group; 10-tolyl-9-oxothioxanthenium nonafluorobutanesulfonate FUJIFILM CORPORATION (JP) 2010-05-18 US disclosed
US-20080085468-A1 microlithography; ultrafine processing of semiconductor using electron beam, X-ray or deep UV; high sensitivity, high resolution and good line edge roughness; suppression of vaporized outgas; a polystyrene with an acid-decomposable group; 10-tolyl-9-oxothioxanthenium nonafluorobutanesulfonate FUJIFILM CORPORATION (JP) 2008-04-10 US disclosed
US-20080081282-A1 RESIST COMPOSITION AND PATTERN FORMING METHOD USING THE SAME FUJIFILM CORPORATION (JP) 2008-04-03 US disclosed