SCHEMBL10148540

SCHEMBL10148540

CCC(C)c1ccc(OC(C)OCCOc2cc(OC)cc(OC)c2)cc1

nearest known ligand 0.43

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
ALDH1A1 P00352 4/20 0.43
GAA P10253 2/20 0.43
MAPT P10636 1/20 0.43
TSHR P16473 1/20 0.40
MEN1 O00255 1/20 0.40
KMT2A Q03164 1/20 0.40
TDP1 Q9NUW8 1/20 0.40
AHR P35869 2/20 0.40
SMN1; SMN2 Q16637 2/20 0.39
HPGD P15428 1/20 0.39
NPSR1 Q6W5P4 1/20 0.37
SLC7A5 Q01650 1/20 0.37
KCNH2 Q12809 1/20 0.36
LMNA P02545 1/20 0.36
ESR1 P03372 2/20 0.35
ABCB11 O95342 1/20 0.35
ORAI1 Q96D31 1/20 0.35
CHRNB2 P17787 1/20 0.35
CHRNB4 P30926 1/20 0.35
CHRNA3 P32297 1/20 0.35

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL682235 0.92 ALDH1A1 (0.48) ALDH1A1GAAMAPTTSHRMEN1
SCHEMBL2758470 0.91 NPSR1 (0.49) ALDH1A1GAAMAPTTSHRMEN1
SCHEMBL11999038 0.90 ABCB11 (0.47) TSHRTDP1AHRABCB11L3MBTL1
SCHEMBL683310 0.90 ABCB11 (0.46) ALDH1A1GAAMAPTTSHRMEN1
SCHEMBL2758467 0.87 TUBB4A (0.40) ALDH1A1GAAMAPTTSHRMEN1
SCHEMBL2758476 0.87 ABCB11 (0.44) ALDH1A1GAAMAPTTSHRMEN1
SCHEMBL10148563 0.86 NPSR1 (0.40) ALDH1A1GAAMAPTTSHRTDP1
SCHEMBL2758468 0.86 HIF1A (0.46) ALDH1A1GAAMAPTTSHRMEN1
SCHEMBL14258895 0.85 ALDH1A1 (0.47) ALDH1A1GAAMAPTTSHRMEN1
SCHEMBL10148558 0.84 NPSR1 (0.39) ALDH1A1GAAMAPTMEN1KMT2A

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8092976-B2 High resolution, reduced pattern falling, and good sensitivity and good dissolution contrast achieved even in EUV (extreme ultra violet) exposure, reduction in the line edge roughness FUJIFILM CORPORATION (JP) 2012-01-10 US disclosed
US-7718344-B2 microlithography; ultrafine processing of semiconductor using electron beam, X-ray or deep UV; high sensitivity, high resolution and good line edge roughness; suppression of vaporized outgas; a polystyrene with an acid-decomposable group; 10-tolyl-9-oxothioxanthenium nonafluorobutanesulfonate FUJIFILM CORPORATION (JP) 2010-05-18 US disclosed
US-20080085468-A1 microlithography; ultrafine processing of semiconductor using electron beam, X-ray or deep UV; high sensitivity, high resolution and good line edge roughness; suppression of vaporized outgas; a polystyrene with an acid-decomposable group; 10-tolyl-9-oxothioxanthenium nonafluorobutanesulfonate FUJIFILM CORPORATION (JP) 2008-04-10 US disclosed
US-20080081282-A1 RESIST COMPOSITION AND PATTERN FORMING METHOD USING THE SAME FUJIFILM CORPORATION (JP) 2008-04-03 US disclosed