SCHEMBL10170746

SCHEMBL10170746

CCC(C)(C)C(=O)OC1(C)C2CC3CC1CC(O)(C3)C2

nearest known ligand 0.36

Predicted protein targets (top 4)

geneUniProtsupporting neighboursconfidence
CYP17A1 P05093 1/20 0.36
CYP19A1 P11511 1/20 0.36
HSD11B1 P28845 3/20 0.33
HSD11B2 P80365 1/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL2607834 0.87 CYP17A1 (0.36) CYP17A1CYP19A1
SCHEMBL14258838 0.86 CYP19A1 (0.37) CYP17A1CYP19A1HSD11B1
SCHEMBL12977733 0.86 HSD11B1 (0.33) HSD11B1HSD11B2
SCHEMBL14556809 0.84 HSD11B1 (0.33) CYP17A1CYP19A1HSD11B1
SCHEMBL17370212 0.84 CYP17A1 (0.30) CYP17A1CYP19A1
SCHEMBL47397 0.83 CYP19A1 (0.48) CYP17A1CYP19A1HSD11B1
SCHEMBL17166857 0.83 CYP17A1 (0.33) CYP17A1CYP19A1HSD11B1
SCHEMBL12017755 0.82 CYP17A1 (0.37) CYP17A1CYP19A1HSD11B1HSD11B2
SCHEMBL11938769 0.82 HSD11B1 (0.32) HSD11B1
SCHEMBL14258823 0.81 CYP19A1 (0.39) CYP17A1CYP19A1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 19 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-9523912-B2 Pattern forming method, actinic ray-sensitive or radiation-sensitive resin composition, resist film, manufacturing method of electronic device, electronic device and compound FUJIFILM CORPORATION (JP) 2016-12-20 US disclosed
US-20160070167-A1 PATTERN FORMING METHOD, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, MANUFACTURING METHOD OF ELECTRONIC DEVICE, ELECTRONIC DEVICE AND COMPOUND FUJIFILM CORPORATION (JP) 2016-03-10 US disclosed
US-8283105-B2 Positive resist composition and method of forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2012-10-09 US disclosed
US-RE43560-E1 Positive photosensitive compositions FUJIFILM CORPORATION (JP) 2012-07-31 US disclosed
US-8192915-B2 Positive resist composition, method of forming resist pattern, and polymeric compound TOKYO OHKA KOGYO CO., LTD. (JP) 2012-06-05 US disclosed
US-8124313-B2 Resist composition, method of forming resist pattern, novel compound, and acid generator TOKYO OHKA KOGYO CO., LTD. (JP) 2012-02-28 US disclosed
US-7812194-B2 Positive photosensitive composition FUJIFILM CORPORATION (JP) 2010-10-12 US disclosed
US-20100255419-A1 POSITIVE PHOTOSENSITIVE COMPOSITION FUJIFILM CORPORATION (JP) 2010-10-07 US disclosed
US-20100233624-A1 POSITIVE RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN TOKYO OHKA KOGYO CO., LTD. (JP) 2010-09-16 US disclosed
US-7776512-B2 Positive photosensitive composition FUJIFILM CORPORATION (JP) 2010-08-17 US disclosed
US-20100121077-A1 RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, NOVEL COMPOUND, AND ACID GENERATOR TOKYO OHKA KOGYO CO., LTD. (JP) 2010-05-13 US disclosed
US-20100062369-A1 Positive resist composition, method of forming resist pattern, and polymeric compound TOKYO OHKA KOGYO CO., LTD. (JP) 2010-03-11 US disclosed
US-7592126-B2 Positive resist composition and pattern forming method using the resist composition FUJIFILM CORPORATION (JP) 2009-09-22 US disclosed
US-20090148791-A1 POSITIVE PHOTOSENSITIVE COMPOSITION FUJIFILM CORPORATION (JP) 2009-06-11 US disclosed
US-7435526-B2 Positive photosensitive composition FUJIFILM CORPORATION (JP) 2008-10-14 US disclosed
US-20080187863-A1 POSITIVE PHOTOSENSITIVE COMPOSITION, POLYMER COMPOUND USED FOR THE POSITIVE PHOTOSENSITIVE COMPOSITION, PRODUCTION METHOD OF THE POLYMER COMPOUND, AND PATTERN FORMING METHOD USING THE POSITIVE PHOTOSENSITIVE COMPOSITION FUJIFILM CORPORATION (JP) 2008-08-07 US disclosed
US-7291441-B2 Positive resist composition and pattern forming method utilizing the same FUJIFILM CORPORATION (JP) 2007-11-06 US disclosed
US-7291441-B2 Positive resist composition and pattern forming method utilizing the same FUJIFILM CORPORATION (JP) 2007-11-06 US disclosed
US-20070003871-A1 Positive photosensitive composition FUJI PHOTO FILM CO., LTD. 2007-01-04 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (3 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20100121077-A1 RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, NOVEL COMPOUND, AND ACID GENERATOR RER1, ABCC1, SLC11A2 CYP17A1 577/4885CYP19A1 182/4885HSD11B1 1339/4885
US-20160070167-A1 PATTERN FORMING METHOD, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, MANUFACTURING METHOD OF ELECTRONIC DEVICE, ELECTRONIC DEVICE AND COMPOUND RER1, TERB1, RXRA CYP17A1 2031/4885CYP19A1 1291/4885HSD11B1 4022/4885
US-20100255419-A1 POSITIVE PHOTOSENSITIVE COMPOSITION RARA, SUN2, RARG CYP17A1 4183/4885CYP19A1 3979/4885HSD11B1 4728/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.