Predicted protein targets (top 9)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | THRB | P10828 | 1/20 | 0.49 |
| ▸ | TSHR | P16473 | 3/20 | 0.43 |
| ▸ | POLB | P06746 | 1/20 | 0.37 |
| ▸ | APEX1 | P27695 | 1/20 | 0.37 |
| ▸ | HTT | P42858 | 1/20 | 0.37 |
| ▸ | TDP1 | Q9NUW8 | 1/20 | 0.37 |
| ▸ | ALDH1A1 | P00352 | 2/20 | 0.35 |
| ▸ | CA1 | P00915 | 1/20 | 0.30 |
| ▸ | CA2 | P00918 | 1/20 | 0.30 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL15334793 | 0.87 | THRB (0.46) | THRBTSHRPOLBAPEX1HTT | |
| SCHEMBL12018147 | 0.83 | THRB (0.46) | THRBTSHRPOLBAPEX1HTT | |
| SCHEMBL13557333 | 0.82 | THRB (0.55) | THRBTSHRPOLBAPEX1HTT | |
| SCHEMBL13557337 | 0.82 | THRB (0.55) | THRBTSHRPOLBAPEX1HTT | |
| SCHEMBL4568739 | 0.82 | THRB (0.55) | THRBTSHRPOLBAPEX1HTT | |
| SCHEMBL13557189 | 0.81 | THRB (0.44) | THRBTSHRPOLBAPEX1HTT | |
| SCHEMBL10219741 | 0.81 | THRB (0.44) | THRBTSHRPOLBAPEX1HTT | |
| SCHEMBL4568736 | 0.80 | THRB (0.53) | THRBTSHRPOLBAPEX1HTT | |
| SCHEMBL12016631 | 0.80 | THRB (0.46) | THRBTSHRPOLBAPEX1HTT | |
| SCHEMBL13557190 | 0.80 | THRB (0.46) | THRBTSHRPOLBAPEX1HTT |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 27 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-9696627-B2 | Compositions comprising base-reactive component and processes for photolithography | ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) | 2017-07-04 | — | — | US | disclosed |
| US-9563124-B2 | Photoresist composition and method for producing photoresist pattern | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2017-02-07 | — | — | US | disclosed |
| US-9436082-B2 | Compositions comprising base-reactive component and processes for photolithography | ROHM AND HAAS ELECTRONICS MATERIALS LLC (US) | 2016-09-06 | — | — | US | disclosed |
| US-9233945-B2 | Compound, resin and photoresist composition | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2016-01-12 | — | — | US | disclosed |
| US-9233945-B2 | Compound, resin and photoresist composition | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2016-01-12 | — | — | US | disclosed |
| US-20150301451-A1 | PATTERN FORMING METHOD, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, AND ELECTRONIC DEVICE | FUJIFILM CORPORATION (JP) | 2015-10-22 | — | — | US | disclosed |
| US-9051247-B2 | Salt, photoresist composition, and method for producing photoresist pattern | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2015-06-09 | — | — | US | disclosed |
| US-8802352-B2 | Salt, photoresist composition and method for producing photoresist pattern | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2014-08-12 | — | — | US | disclosed |
| US-8765357-B2 | Resin and photoresist composition comprising same | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2014-07-01 | — | — | US | disclosed |
| US-8741541-B2 | Compound, resin, photoresist composition, and method for producing photoresist pattern | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2014-06-03 | — | — | US | disclosed |
| US-20130040239-A1 | SALT, PHOTORESIST COMPOSITION AND METHOD FOR PRODUCING PHOTORESIST PATTERN | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2013-02-14 | — | — | US | disclosed |
| US-20120328986-A1 | SALT, PHOTORESIST COMPOSITION, AND METHOD FOR PRODUCING PHOTORESIST PATTERN | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2012-12-27 | — | — | US | disclosed |
| US-20120295201-A1 | COMPOUND, RESIN, PHOTORESIST COMPOSITION, AND METHOD FOR PRODUCING PHOTORESIST PATTERN | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2012-11-22 | — | — | US | disclosed |
| US-20120270154-A1 | RESIN AND PHOTORESIST COMPOSITION COMPRISING SAME | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2012-10-25 | — | — | US | disclosed |
| US-20120219912-A1 | RESIST COMPOSITION AND METHOD FOR PRODUCING RESIST PATTERN | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2012-08-30 | — | — | US | disclosed |
| US-20120171626-A1 | COMPOSITIONS COMPRISING BASE-REACTIVE COMPONENT AND PROCESSES FOR PHOTOLITHOGRAPHY | ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) | 2012-07-05 | — | — | US | disclosed |
| EP-2472320-A2 | Compositions comprising base-reactive component and processes for photolithography | Rohm and Haas Electronic Materials LLC (US) | 2012-07-04 | — | — | EP | disclosed |
| US-20120052443-A1 | RESIST COMPOSITION AND METHOD FOR PRODUCING RESIST PATTERN | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2012-03-01 | — | — | US | disclosed |
| US-20110255061-A1 | COMPOSITIONS COMPRISING BASE-REACTIVE COMPONENT AND PROCESSES FOR PHOTOLITHOGRAPHY | ROHM AND HAAS ELECTRONIC MATERIALS, L.L.C. (US) | 2011-10-20 | — | — | US | disclosed |
| WO-2011072307-A2 | COMPOSITIONS COMPRISING BASE-REACTIVE COMPONENT AND PROCESSES FOR PHOTOLITHOGRAPHY | ROHM AND HAAS ELECTRONIC MATERIALS, L.L.C. (US) | 2011-06-16 | — | — | WO | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (3 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-20120328986-A1 | SALT, PHOTORESIST COMPOSITION, AND METHOD FOR PRODUCING PHOTORESIST PATTERN | CLIC1, ELOVL6, RER1 | THRB 4006/4885TSHR 2029/4885POLB 3087/4885 |
| US-20120295201-A1 | COMPOUND, RESIN, PHOTORESIST COMPOSITION, AND METHOD FOR PRODUCING PHOTORESIST PATTERN | C1R, C9, TMT1A | THRB 2362/4885TSHR 1487/4885POLB 3084/4885 |
| US-20130040239-A1 | SALT, PHOTORESIST COMPOSITION AND METHOD FOR PRODUCING PHOTORESIST PATTERN | CRY1, H1-0, SPIN1 | THRB 4123/4885TSHR 2801/4885POLB 2663/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.