Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | ALDH1A1 | P00352 | 8/20 | 0.45 |
| ▸ | KMT2A | Q03164 | 3/20 | 0.45 |
| ▸ | NPSR1 | Q6W5P4 | 2/20 | 0.45 |
| ▸ | MEN1 | O00255 | 2/20 | 0.45 |
| ▸ | MAPT | P10636 | 2/20 | 0.45 |
| ▸ | PRKCA | P17252 | 1/20 | 0.44 |
| ▸ | CYP17A1 | P05093 | 2/20 | 0.42 |
| ▸ | CYP19A1 | P11511 | 2/20 | 0.42 |
| ▸ | PKM | P14618 | 1/20 | 0.40 |
| ▸ | ATM | Q13315 | 1/20 | 0.39 |
| ▸ | CYP1A2 | P05177 | 1/20 | 0.39 |
| ▸ | CYP3A4 | P08684 | 1/20 | 0.39 |
| ▸ | CYP2D6 | P10635 | 1/20 | 0.39 |
| ▸ | CYP2C9 | P11712 | 1/20 | 0.39 |
| ▸ | CYP2C19 | P33261 | 1/20 | 0.39 |
| ▸ | GAA | P10253 | 2/20 | 0.38 |
| ▸ | SMN1; SMN2 | Q16637 | 1/20 | 0.38 |
| ▸ | EPHX2 | P34913 | 1/20 | 0.37 |
| ▸ | XBP1 | P17861 | 1/20 | 0.37 |
| ▸ | RECQL | P46063 | 1/20 | 0.36 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL10067116 | 0.95 | ALDH1A1 (0.44) | ALDH1A1KMT2ANPSR1MEN1MAPT | |
| SCHEMBL98471 | 0.90 | ALDH1A1 (0.47) | ALDH1A1KMT2ANPSR1MEN1MAPT | |
| SCHEMBL13310407 | 0.89 | ALDH1A1 (0.37) | ALDH1A1KMT2ANPSR1MEN1MAPT | |
| SCHEMBL10172814 | 0.87 | ALDH1A1 (0.37) | ALDH1A1KMT2ANPSR1MEN1MAPT | |
| SCHEMBL10172810 | 0.86 | NPSR1 (0.50) | ALDH1A1KMT2ANPSR1MEN1MAPT | |
| SCHEMBL10172812 | 0.86 | ALDH1A1 (0.51) | ALDH1A1NPSR1GAASMN1; SMN2 | |
| SCHEMBL13310424 | 0.84 | ALDH1A1 (0.36) | ALDH1A1KMT2ANPSR1MEN1MAPT | |
| SCHEMBL10172809 | 0.84 | NPSR1 (0.52) | ALDH1A1KMT2ANPSR1MEN1MAPT | |
| SCHEMBL10067091 | 0.83 | ALDH1A1 (0.36) | ALDH1A1KMT2ANPSR1MEN1MAPT | |
| SCHEMBL10172854 | 0.82 | ALDH1A1 (0.50) | ALDH1A1NPSR1GAASMN1; SMN2 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 120 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-20240231230-A1 | COMPOSITION FOR FORMING SILICON-CONTAINING RESIST UNDERLAYER FILM | NISSAN CHEMICAL CORPORATION (JP) | 2024-07-11 | — | — | US | disclosed |
| US-20240231230-A1 | COMPOSITION FOR FORMING SILICON-CONTAINING RESIST UNDERLAYER FILM | NISSAN CHEMICAL CORPORATION (JP) | 2024-07-11 | — | — | US | disclosed |
| US-20230367213-A1 | MASK BLANK, RESIST PATTERN FORMING PROCESS AND CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-11-16 | — | — | US | disclosed |
| US-20230367214-A1 | CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION AND RESIST PATTERN FORMING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-11-16 | — | — | US | disclosed |
| US-20230367214-A1 | CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION AND RESIST PATTERN FORMING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-11-16 | — | — | US | disclosed |
| US-20230367213-A1 | MASK BLANK, RESIST PATTERN FORMING PROCESS AND CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-11-16 | — | — | US | disclosed |
| US-20230341775-A1 | CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION AND RESIST PATTERN FORMING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-10-26 | — | — | US | disclosed |
| US-20230341775-A1 | CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION AND RESIST PATTERN FORMING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-10-26 | — | — | US | disclosed |
| EP-4258056-A2 | ALCOHOL COMPOUND, CHEMICALLY AMPLIFIED NEGATIVE RESIST COMPOSITION AND RESIST PATTERN FORMING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-10-11 | — | — | EP | disclosed |
| US-20230280651-A1 | RESIST COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-09-07 | — | — | US | disclosed |
| US-8394570-B2 | Sulfonium salt, acid generator, resist composition, photomask blank, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2013-03-12 | — | — | US | disclosed |
| US-8394570-B2 | Sulfonium salt, acid generator, resist composition, photomask blank, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2013-03-12 | — | — | US | disclosed |
| US-8389201-B2 | Positive resist composition and pattern forming process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2013-03-05 | — | — | US | disclosed |
| US-20120288796-A1 | RESIST COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2012-11-15 | — | — | US | disclosed |
| US-20120214100-A1 | RESIST COMPOSITION AND PATTERNING PROCESS USING THE SAME | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2012-08-23 | — | — | US | disclosed |
| US-20120196228-A1 | RESIST COMPOSITION AND PATTERNING PROCESS USING THE SAME | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2012-08-02 | — | — | US | disclosed |
| US-20120164582-A1 | RADIATION-SENSITIVE COMPOSITION AND COMPOUND | JSR CORPORATION (JP) | 2012-06-28 | — | — | US | disclosed |
| US-20110003251-A1 | POSITIVE RESIST COMPOSITION AND PATTERN FORMING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2011-01-06 | — | — | US | disclosed |
| EP-2270596-A2 | Positive resist compostion and pattern forming process | Shin-Etsu Chemical Co., Ltd. (JP) | 2011-01-05 | — | — | EP | disclosed |
| US-20100143830-A1 | SULFONIUM SALT, ACID GENERATOR, RESIST COMPOSITION, PHOTOMASK BLANK, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2010-06-10 | — | — | US | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (3 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-20100143830-A1 | SULFONIUM SALT, ACID GENERATOR, RESIST COMPOSITION, PHOTOMASK BLANK, AND PATTERNING PROCESS | TYK2, VRK2, ARSA | ALDH1A1 3818/4885KMT2A 2407/4885NPSR1 748/4885 |
| US-20120164582-A1 | RADIATION-SENSITIVE COMPOSITION AND COMPOUND | RAD51, RER1, ATP6AP1 | ALDH1A1 1300/4885KMT2A 2301/4885NPSR1 3120/4885 |
| US-20230280651-A1 | RESIST COMPOSITION AND PATTERNING PROCESS | EIF2B1, EIF2B5, EIF2B3 | ALDH1A1 3516/4885KMT2A 2222/4885NPSR1 3500/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.