SCHEMBL10172872

SCHEMBL10172872

O=C(OCCS(=O)(=O)O)C1CC2CCC1C2

nearest known ligand 0.42

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
POLB P06746 1/20 0.42
HSD11B1 P28845 1/20 0.36
HPGD P15428 3/20 0.35
L3MBTL1 Q9Y468 2/20 0.34
EPHX2 P34913 3/20 0.33
NPC1 O15118 1/20 0.33
ALDH1A1 P00352 1/20 0.33
MAPT P10636 1/20 0.33
MAPK1 P28482 1/20 0.33
RAB9A P51151 1/20 0.33
GFER P55789 1/20 0.33
CYP1A2 P05177 1/20 0.32
CYP2D6 P10635 1/20 0.32
CYP2C9 P11712 1/20 0.32
CYP2C19 P33261 1/20 0.32
HIF1A Q16665 1/20 0.32
HSD17B10 Q99714 1/20 0.32
KCNQ3 O43525 1/20 0.32
KCNQ2 O43526 1/20 0.32
KCNQ4 P56696 1/20 0.32

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL10067078 0.91 POLB (0.41) POLBHSD11B1HPGDL3MBTL1EPHX2
SCHEMBL10172842 0.90 POLB (0.40) POLBHSD11B1HPGDL3MBTL1EPHX2
SCHEMBL18826804 0.85 POLB (0.33) POLB
SCHEMBL12938399 0.84 POLB (0.40) POLBHSD11B1HPGDL3MBTL1EPHX2
SCHEMBL18775939 0.82 POLB (0.42) POLBHSD11B1HPGDL3MBTL1EPHX2
SCHEMBL9908386 0.80 POLB (0.47) POLBHSD11B1HPGDL3MBTL1EPHX2
SCHEMBL21853775 0.80 POLB (0.47) POLBHSD11B1HPGDL3MBTL1EPHX2
SCHEMBL18922923 0.79 POLB (0.46) POLBHSD11B1HPGDL3MBTL1EPHX2
SCHEMBL32688907 0.78 POLB (0.45) POLBHSD11B1HPGDL3MBTL1EPHX2
SCHEMBL12039740 0.76 POLB (0.36) POLBHSD11B1HPGD

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 31 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20230140810-A1 MATERIAL FOR FORMING ADHESIVE FILM, PATTERNING PROCESS, AND METHOD FOR FORMING ADHESIVE FILM SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-05-04 US disclosed
US-20230140810-A1 MATERIAL FOR FORMING ADHESIVE FILM, PATTERNING PROCESS, AND METHOD FOR FORMING ADHESIVE FILM SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-05-04 US disclosed
US-20230059089-A1 MATERIAL FOR FORMING ADHESIVE FILM, METHOD FOR FORMING ADHESIVE FILM USING THE SAME, AND PATTERNING PROCESS USING MATERIAL FOR FORMING ADHESIVE FILM SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-02-23 US disclosed
EP-4116770-A1 MATERIAL FOR FORMING ADHESIVE FILM, METHOD FOR FORMING ADHESIVE FILM USING THE SAME, AND PATTERNING PROCESS USING MATERIAL FOR FORMING ADHESIVE FILM Shin-Etsu Chemical Co., Ltd. (JP) 2023-01-11 EP disclosed
US-11366386-B2 Patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2022-06-21 US disclosed
US-11231649-B2 Patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2022-01-25 US disclosed
US-10844257-B2 Adhesive composition, bio-electrode, and method for manufacturing a bio-electrode SHIN-ETSU CHEMICAL CO., LTD. (JP) 2020-11-24 US disclosed
US-10808148-B2 Adhesive composition, bio-electrode, method for manufacturing a bio-electrode, and salt SHIN-ETSU CHEMICAL CO., LTD. (JP) 2020-10-20 US disclosed
US-20190354016-A1 PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2019-11-21 US disclosed
US-20190354017-A1 PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2019-11-21 US disclosed
US-9200098-B2 Radiation-sensitive composition and compound JSR CORPORATION (JP) 2015-12-01 US disclosed
US-9200098-B2 Radiation-sensitive composition and compound JSR CORPORATION (JP) 2015-12-01 US disclosed
US-8900793-B2 Polymer, chemically amplified resist composition, and patterning process using said chemically amplified resist composition SHIN-ETSU CHEMICAL CO., LTD. (JP) 2014-12-02 US disclosed
US-8691490-B2 Sulfonium salt, polymer, method for producing the polymer, resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2014-04-08 US disclosed
US-8394570-B2 Sulfonium salt, acid generator, resist composition, photomask blank, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2013-03-12 US disclosed
US-8394570-B2 Sulfonium salt, acid generator, resist composition, photomask blank, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2013-03-12 US disclosed
US-20120308932-A1 POLYMER, CHEMICALLY AMPLIFIED RESIST COMPOSITION, AND PATTERNING PROCESS USING SAID CHEMICALLY AMPLIFIED RESIST COMPOSITION SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-12-06 US disclosed
US-20120164582-A1 RADIATION-SENSITIVE COMPOSITION AND COMPOUND JSR CORPORATION (JP) 2012-06-28 US disclosed
US-20110189607-A1 NOVEL SULFONIUM SALT, POLYMER, METHOD FOR PRODUCING THE POLYMER, RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2011-08-04 US disclosed
US-20100143830-A1 SULFONIUM SALT, ACID GENERATOR, RESIST COMPOSITION, PHOTOMASK BLANK, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2010-06-10 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (6 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-10808148-B2 Adhesive composition, bio-electrode, method for manufacturing a bio-electrode, and salt SLC9A1, FN1, EPCAM POLB 3560/4885HSD11B1 2398/4885HPGD 3512/4885
US-11366386-B2 Patterning process FEM1B, EGLN1, TET1 POLB 1349/4885HSD11B1 1713/4885HPGD 2285/4885
US-20110189607-A1 NOVEL SULFONIUM SALT, POLYMER, METHOD FOR PRODUCING THE POLYMER, RESIST COMPOSITION AND PATTERNING PROCESS RPS4Y1, ETV6, RPS4X POLB 1380/4885HSD11B1 2750/4885HPGD 4001/4885
US-20190354017-A1 PATTERNING PROCESS FEM1B, EGLN1, TET1 POLB 1349/4885HSD11B1 1713/4885HPGD 2285/4885
US-20100143830-A1 SULFONIUM SALT, ACID GENERATOR, RESIST COMPOSITION, PHOTOMASK BLANK, AND PATTERNING PROCESS TYK2, VRK2, ARSA POLB 1130/4885HSD11B1 2193/4885HPGD 4723/4885
US-20120164582-A1 RADIATION-SENSITIVE COMPOSITION AND COMPOUND RAD51, RER1, ATP6AP1 POLB 270/4885HSD11B1 2856/4885HPGD 1273/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.