SCHEMBL10177485

SCHEMBL10177485

O=C(CC12CC3CC(CC(C3)C1)C2)OCCOC(=O)C(F)(F)S(=O)(=O)O

nearest known ligand 0.48

Predicted protein targets (top 16)

geneUniProtsupporting neighboursconfidence
LMNA P02545 2/20 0.43
ALDH1A1 P00352 6/20 0.42
THRB P10828 1/20 0.42
MEN1 O00255 4/20 0.39
KMT2A Q03164 4/20 0.39
MAPT P10636 3/20 0.38
HTT P42858 1/20 0.37
EPHX2 P34913 1/20 0.37
NPSR1 Q6W5P4 2/20 0.36
MAPK1 P28482 1/20 0.36
GAA P10253 1/20 0.35
SMN1; SMN2 Q16637 1/20 0.34
BPTF Q12830 1/20 0.34
EPHX1 P07099 1/20 0.34
POLB P06746 1/20 0.34
NR4A1 P22736 1/20 0.34

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL686566 0.85 MEN1 (0.48) ALDH1A1MEN1KMT2AMAPTEPHX2
SCHEMBL10225065 0.82 EPHX2 (0.40) ALDH1A1MEN1KMT2AMAPTEPHX2
SCHEMBL13181366 0.82 LMNA (0.38) LMNAALDH1A1MAPTEPHX2SMN1; SMN2
SCHEMBL10233254 0.82 LMNA (0.46) LMNAALDH1A1THRBMEN1KMT2A
SCHEMBL593099 0.81 ALDH1A1 (0.45) ALDH1A1MEN1KMT2AEPHX2
SCHEMBL2734363 0.81 ALDH1A1 (0.41) LMNAALDH1A1MEN1KMT2AMAPT
SCHEMBL2247103 0.80 ALDH1A1 (0.44) ALDH1A1MEN1KMT2AEPHX2
Ammonia Solution, Strong SCHEMBL16105230 0.80 ALDH1A1 (0.44) ALDH1A1MEN1KMT2AEPHX2
SCHEMBL13706078 0.79 LMNA (0.46) LMNAALDH1A1THRBMEN1KMT2A
SCHEMBL4126416 0.79 LMNA (0.48) LMNAALDH1A1THRBMEN1KMT2A

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 31 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-9097969-B2 Compound, resist composition and method of forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2015-08-04 US disclosed
US-9075304-B2 Method of producing ammonium salt compound, method of producing compound, and compound, polymeric compound, acid generator, resist composition and method of forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2015-07-07 US disclosed
US-9040220-B2 Compound and method of producing the same, acid generator, resist composition and method of forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2015-05-26 US disclosed
US-9040220-B2 Compound and method of producing the same, acid generator, resist composition and method of forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2015-05-26 US disclosed
US-9034556-B2 Compound and method of producing the same, acid generator, resist composition and method of forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2015-05-19 US disclosed
US-9034556-B2 Compound and method of producing the same, acid generator, resist composition and method of forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2015-05-19 US disclosed
US-9023581-B2 Resist composition, method of forming resist pattern, polymeric compound, and compound TOKYO OHKA KOGYO CO., LTD (JP) 2015-05-05 US disclosed
US-9017919-B2 Resist composition, method of forming resist pattern, novel compound and acid generator TOKYO OHKA KOGYO CO., LTD. (JP) 2015-04-28 US disclosed
US-9012129-B2 Resist composition, method of forming resist pattern, novel compound, and acid generator TOKYO OHKA KOGYO CO., LTD. (JO) 2015-04-21 US disclosed
US-8808959-B2 Resist composition, method of forming resist pattern, novel compound, and acid generator TOKYO OHKA KOGYO CO., LTD. (JP) 2014-08-19 US disclosed
US-8298748-B2 Positive resist composition, method of forming resist pattern, and polymeric compound TOKYO OHKA KOGYO CO., LTD. (JP) 2012-10-30 US disclosed
US-20120264061-A1 RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, NOVEL COMPOUND, AND ACID GENERATOR TOKYO OHKA KOGYO CO., LTD. (JP) 2012-10-18 US disclosed
US-20120164580-A1 NOVEL COMPOUND AND METHOD OF PRODUCING THE SAME, ACID GENERATOR, RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN TOKYO OHKA KOGYO CO., LTD. (JP) 2012-06-28 US disclosed
US-8206890-B2 Resist composition, method of forming resist pattern, compound and acid generator TOKYO OHKA KOGYO CO., LTD. (JP) 2012-06-26 US disclosed
US-20100297560-A1 POSITIVE RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, AND POLYMERIC COMPOUND TOKYO OHKA KOGYO CO., LTD. (JP) 2010-11-25 US disclosed
US-20100136478-A1 Resist composition, method of forming resist pattern, novel compound, and acid generator TOKYO OHKA KOGYO CO., LTD. 2010-06-03 US disclosed
US-20100119974-A1 Resist composition, method of forming resist pattern, novel compound, and acid generator TOKYO OHKA KOGYO CO., LTD. 2010-05-13 US disclosed
US-20100081088-A1 RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, COMPOUND AND ACID GENERATOR INCLUDING THE SAME TOKYO OHKA KOGYO CO., LTD. (JP) 2010-04-01 US disclosed
US-20100015552-A1 RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, COMPOUND AND ACID GENERATOR TOKYO OHKA KOGYO CO., LTD. (JP) 2010-01-21 US disclosed
US-20090162788-A1 NOVEL COMPOUND AND METHOD OF PRODUCING THE SAME, ACID GENERATOR, RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN TOKYO OHKA KOGYO CO., LTD. (JP) 2009-06-25 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (6 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20120164580-A1 NOVEL COMPOUND AND METHOD OF PRODUCING THE SAME, ACID GENERATOR, RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN RER1, GLRA1, ASIC1 LMNA 2788/4885ALDH1A1 1156/4885THRB 2278/4885
US-20100081088-A1 RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, COMPOUND AND ACID GENERATOR INCLUDING THE SAME ASIC1, RER1, GRIN1 LMNA 1674/4885ALDH1A1 717/4885THRB 3829/4885
US-20120264061-A1 RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, NOVEL COMPOUND, AND ACID GENERATOR C1R, RER1, ASIC1 LMNA 2227/4885ALDH1A1 2279/4885THRB 2890/4885
US-20100136478-A1 Resist composition, method of forming resist pattern, novel compound, and acid generator ASIC1, RER1, ABCC1 LMNA 2857/4885ALDH1A1 539/4885THRB 2168/4885
US-20100119974-A1 Resist composition, method of forming resist pattern, novel compound, and acid generator C1R, SCO2, RER1 LMNA 2242/4885ALDH1A1 2259/4885THRB 2995/4885
US-20090162788-A1 NOVEL COMPOUND AND METHOD OF PRODUCING THE SAME, ACID GENERATOR, RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN RER1, ASIC1, GLRA1 LMNA 2838/4885ALDH1A1 987/4885THRB 1939/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.