SCHEMBL4126416

SCHEMBL4126416

O=C(CC12CC3CC(CC(C3)C1)C2)OCCOC(=O)CS(=O)(=O)O

nearest known ligand 0.54

Predicted protein targets (top 18)

geneUniProtsupporting neighboursconfidence
LMNA P02545 2/20 0.48
ALDH1A1 P00352 7/20 0.47
THRB P10828 1/20 0.47
MAPT P10636 3/20 0.42
MEN1 O00255 4/20 0.40
KMT2A Q03164 4/20 0.40
EPHX2 P34913 1/20 0.40
HTT P42858 1/20 0.40
NPSR1 Q6W5P4 2/20 0.39
MAPK1 P28482 1/20 0.39
BPTF Q12830 1/20 0.38
SMN1; SMN2 Q16637 1/20 0.38
GAA P10253 1/20 0.38
CA12 O43570 1/20 0.37
CA1 P00915 1/20 0.37
CA2 P00918 1/20 0.37
CA9 Q16790 1/20 0.37
PTP4A3 O75365 1/20 0.37

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL15426625 0.86 LMNA (0.49) LMNAALDH1A1THRBMAPTMEN1
SCHEMBL19325507 0.86 MEN1 (0.51) LMNAALDH1A1THRBMAPTMEN1
SCHEMBL10172823 0.83 LMNA (0.47) LMNAALDH1A1THRBMAPTMEN1
SCHEMBL14769567 0.82 LMNA (0.51) LMNAALDH1A1THRBMAPTEPHX2
SCHEMBL12159399 0.82 ALDH1A1 (0.49) LMNAALDH1A1MAPTMEN1KMT2A
SCHEMBL799836 0.81 ALDH1A1 (0.44) LMNAALDH1A1MAPTMEN1KMT2A
SCHEMBL10177485 0.79 LMNA (0.43) LMNAALDH1A1THRBMAPTMEN1
SCHEMBL14644921 0.77 LMNA (0.60) LMNAALDH1A1THRBMAPTBPTF
SCHEMBL10531350 0.77 LMNA (0.53) LMNAALDH1A1THRBMAPTMEN1
SCHEMBL25988791 0.77 ALDH1A1 (0.55) LMNAALDH1A1THRBMAPTMEN1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 15 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-11754926-B2 Method of forming resist pattern, resist composition and method of producing the same TOKYO OHKA KOGYO CO., LTD. (JP) 2023-09-12 US disclosed
US-20230127914-A1 RESIST PATTERN FORMATION METHOD TOKYO OHKA KOGYO CO., LTD. (JP) 2023-04-27 US disclosed
US-20230127914-A1 RESIST PATTERN FORMATION METHOD TOKYO OHKA KOGYO CO., LTD. (JP) 2023-04-27 US disclosed
US-20200150541-A1 METHOD OF FORMING RESIST PATTERN, RESIST COMPOSITION AND METHOD OF PRODUCING THE SAME TOKYO OHKA KOGYO CO., LTD. (JP) 2020-05-14 US disclosed
EP-2073060-B1 Novel compound and method of producing the same, acid generator, resist composition and method of forming resist pattern TOKYO OHKA KOGYO CO LTD (JP) 2016-08-24 EP disclosed
US-9097969-B2 Compound, resist composition and method of forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2015-08-04 US disclosed
US-9075304-B2 Method of producing ammonium salt compound, method of producing compound, and compound, polymeric compound, acid generator, resist composition and method of forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2015-07-07 US disclosed
US-9040220-B2 Compound and method of producing the same, acid generator, resist composition and method of forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2015-05-26 US disclosed
US-9023581-B2 Resist composition, method of forming resist pattern, polymeric compound, and compound TOKYO OHKA KOGYO CO., LTD (JP) 2015-05-05 US disclosed
US-9017919-B2 Resist composition, method of forming resist pattern, novel compound and acid generator TOKYO OHKA KOGYO CO., LTD. (JP) 2015-04-28 US disclosed
US-20140017617-A1 METHOD OF PRODUCING AMMONIUM SALT COMPOUND, METHOD OF PRODUCING COMPOUND, AND COMPOUND, POLYMERIC COMPOUND, ACID GENERATOR, RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN TOKYO OHKA KOGYO CO., LTD. (JP) 2014-01-16 US disclosed
US-20130089819-A1 RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, POLYMERIC COMPOUND, AND COMPOUND TOKYO OHKA KOGYO CO., LTD. (JP) 2013-04-11 US disclosed
US-20120164580-A1 NOVEL COMPOUND AND METHOD OF PRODUCING THE SAME, ACID GENERATOR, RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN TOKYO OHKA KOGYO CO., LTD. (JP) 2012-06-28 US disclosed
US-20120107744-A1 RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, NOVEL COMPOUND AND ACID GENERATOR TOKYO OHKA KOGYO CO., LTD. (JP) 2012-05-03 US disclosed
US-20120015297-A1 RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, NOVEL COMPOUND, AND ACID GENERATOR TOKYO OHKA KOGYO.CO., LTD. (JP) 2012-01-19 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (3 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20120164580-A1 NOVEL COMPOUND AND METHOD OF PRODUCING THE SAME, ACID GENERATOR, RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN RER1, GLRA1, ASIC1 LMNA 2788/4885ALDH1A1 1156/4885THRB 2278/4885
US-20120107744-A1 RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, NOVEL COMPOUND AND ACID GENERATOR SLC11A2, ABCC1, ASIC1 LMNA 1611/4885ALDH1A1 409/4885THRB 2258/4885
US-20120015297-A1 RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, NOVEL COMPOUND, AND ACID GENERATOR ASIC1, SLC11A2, RER1 LMNA 1580/4885ALDH1A1 1157/4885THRB 3190/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.