SCHEMBL10178588

SCHEMBL10178588

CCC(C)c1ccc(COc2ccc(C(C)=O)cc2)cc1

nearest known ligand 0.64

Predicted protein targets (top 14)

geneUniProtsupporting neighboursconfidence
MAOB P27338 9/20 0.64
MAOA P21397 2/20 0.62
L3MBTL1 Q9Y468 2/20 0.59
ALDH1A1 P00352 2/20 0.59
RXRA P19793 2/20 0.59
RXRB P28702 2/20 0.59
HTT P42858 1/20 0.59
SMN1; SMN2 Q16637 1/20 0.59
HRH3 Q9Y5N1 4/20 0.59
NPC1 O15118 2/20 0.59
RAB9A P51151 2/20 0.59
HSP90AA1 P07900 1/20 0.56
TSHR P16473 1/20 0.56
ADAMTS4 O75173 1/20 0.52

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL14461904 1.00 MAOB (0.64) MAOBMAOAL3MBTL1ALDH1A1RXRA
SCHEMBL10178585 0.85 ALDH1A1 (0.67) MAOBL3MBTL1ALDH1A1RXRARXRB
SCHEMBL10178722 0.84 MAOB (0.64) MAOBMAOAL3MBTL1ALDH1A1HTT
SCHEMBL765363 0.83 TSHR (0.54) L3MBTL1ALDH1A1SMN1; SMN2NPC1RAB9A
SCHEMBL27389499 0.82 NPC1 (0.57) L3MBTL1ALDH1A1RXRARXRBNPC1
SCHEMBL10178461 0.82 RXRA (0.55) MAOBL3MBTL1ALDH1A1RXRARXRB
SCHEMBL14866954 0.80 NPC1 (0.55) MAOBL3MBTL1ALDH1A1RXRARXRB
SCHEMBL15613870 0.80 FFAR1 (0.59) MAOBL3MBTL1ALDH1A1SMN1; SMN2NPC1
SCHEMBL14461696 0.80 NPC1 (0.55) MAOBL3MBTL1ALDH1A1RXRARXRB
SCHEMBL13144203 0.79 TSHR (0.51) L3MBTL1ALDH1A1NPC1RAB9AHSP90AA1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 3 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8124310-B2 Positive resist composition and pattern forming method using the same FUJIFILM CORPORATION (JP) 2012-02-28 US disclosed
US-20090087784-A1 POSITIVE RESIST COMPOSITION AND PATTERN FORMING METHOD USING THE SAME FUJIFILM CORPORATION (JP) 2009-04-02 US disclosed
US-7445831-B2 Radiation curable low stress relaxation elastomeric materials THE PROCTER & GAMBLE COMPANY (US) 2008-11-04 US disclosed